本文關(guān)鍵詞：集成高輻射率納米結(jié)構(gòu)的MEMS紅外光源研究　出處：《中北大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 微機(jī)電系統(tǒng) 紅外光源 輻射率 納米結(jié)構(gòu) 紅外光譜 調(diào)制特性

【摘要】：微機(jī)電系統(tǒng)(Micro-Electro-Mechanical System,MEMS)紅外光源基于熱輻射原理,具有體積小、功耗低、調(diào)制頻率高、波長范圍寬、壽命長等特點(diǎn)。隨著納米技術(shù)及納米結(jié)構(gòu)與傳感器的集成逐漸成為關(guān)注的熱點(diǎn),本文創(chuàng)新性地采用等離子體工藝制備了高輻射率的納米結(jié)構(gòu),并集成于MEMS紅外光源上,大幅提升了光源的輻射效率。本論文的工作分為以下幾個(gè)方面:研究了MEMS紅外光源的國內(nèi)外發(fā)展現(xiàn)狀;從紅外輻射的理論出發(fā),對基于多晶硅熱阻材料的MEMS紅外光源進(jìn)行了理論設(shè)計(jì)分析,并在此基礎(chǔ)上完成了結(jié)構(gòu)設(shè)計(jì)的ANSYS仿真和多晶硅摻雜的TCAD仿真優(yōu)化;對集成于光源的高輻射率納米結(jié)構(gòu)進(jìn)行了微觀機(jī)理分析及FDTD仿真優(yōu)化,并完成了基于硅基底及碳基底的納米結(jié)構(gòu)的制備及表征,同時(shí)對MEMS紅外光源制備過程中涉及的關(guān)鍵工藝進(jìn)行了單步工藝開發(fā);在此基礎(chǔ)上,整合出了基于多晶硅的整體工藝流程并進(jìn)行了流片實(shí)驗(yàn);對封裝完成的MEMS紅外光源進(jìn)行了動態(tài)及靜態(tài)性能測試。本文研制的MEMS紅外光源的特點(diǎn)在于,利用不同的等離子工藝刻蝕硅基底形成中紅外波段高輻射率的納米結(jié)構(gòu),并集成于光源表面,由此大幅提升紅外光源的輻射效率及電光轉(zhuǎn)換效率。與已有的MEMS紅外光源相比,通過集成寬光譜范圍的高輻射率納米結(jié)構(gòu),能夠增加窄波段范圍內(nèi)的紅外光譜輻射強(qiáng)度,并且通過控制熱電阻的輸入電壓可以控制紅外光源輻射的窄波段范圍,提高利用率,利于實(shí)現(xiàn)產(chǎn)業(yè)化推廣。測試結(jié)果顯示,制備的高輻射率納米結(jié)構(gòu)的輻射光譜范圍在2~8μm,輻射率高達(dá)85%以上;集成高輻射率納米結(jié)構(gòu)的MEMS紅外光源在631.6mW的輸入功率下,輻射區(qū)溫度可以達(dá)到280~460℃,輻射能量比未集成時(shí)提高了101.2%,在50Hz的調(diào)制頻率下,調(diào)制深度可達(dá)30%。光源的靜態(tài)特性和動態(tài)特性均能滿足紅外氣體傳感器的應(yīng)用需求。此外,本文還研究了基于其他不同熱電阻材料的高輻射率MEMS紅外光源制備,例如,Pt、非晶碳等。這為后期制備多種不同類型的MEMS紅外光源奠定堅(jiān)實(shí)的基礎(chǔ)。
[Abstract]:Micro-Electro-Mechanical system (MEMS) infrared light source is based on the principle of thermal radiation. It has small volume and low power consumption. With the characteristics of high modulation frequency, wide wavelength range, long life and so on, the nanotechnology and the integration of nanostructure and sensor have gradually become the focus of attention. In this paper, high emissivity nanostructures were prepared by plasma technology and integrated into MEMS infrared light source. The work of this paper is divided into the following aspects: the development of MEMS infrared light source at home and abroad is studied; Based on the theory of infrared radiation, the MEMS infrared light source based on polysilicon thermal resistance material is theoretically designed and analyzed. On this basis, the ANSYS simulation of structure design and the simulation optimization of polysilicon doped TCAD are completed. The microstructure of high emissivity nanostructures integrated with light source was analyzed and optimized by FDTD simulation. The preparation and characterization of nanostructures based on silicon and carbon substrates were completed. At the same time, the key process involved in the preparation of MEMS infrared light source is developed. On this basis, the whole technological process based on polysilicon is integrated and the flow sheet experiment is carried out. The dynamic and static performance of the MEMS infrared light source is tested. The characteristics of the MEMS infrared light source developed in this paper are as follows. The nanostructures with high emissivity in the middle infrared band were formed by different plasma etching process and integrated on the surface of the light source. As a result, the radiation efficiency and electro-optic conversion efficiency of infrared light source are greatly improved. Compared with the existing MEMS infrared light source, high emissivity nanostructures are integrated in a wide spectrum range. It can increase the infrared spectral radiation intensity in the narrow band range, and by controlling the input voltage of the thermal resistance, it can control the narrow band range of the infrared light source radiation, and improve the utilization ratio. The results show that the spectral range of the prepared nanostructures is 2 ~ 8 渭 m and the emissivity is more than 85%. Under the input power of 631.6 MW, the temperature in the radiation region of the MEMS infrared light source integrated with high emissivity nanostructures can reach 280 鈩，

本文編號：1373697