本文關(guān)鍵詞：不同功能層對(duì)量子點(diǎn)電致發(fā)光器件性能的影響　出處：《北京交通大學(xué)》2016年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 量子點(diǎn) 電致發(fā)光 載流子 空穴傳輸層 緩沖層 電子傳輸層 白光 摻雜

【摘要】：量子點(diǎn)是一種性能優(yōu)良的熒光材料,激發(fā)光譜寬、發(fā)射光譜窄、發(fā)光顏色可以通過調(diào)節(jié)粒徑大小來控制、光化學(xué)穩(wěn)定性好、具有較高的電子遷移率,量子點(diǎn)在電致發(fā)光器件方面有巨大的應(yīng)用潛力。基于半導(dǎo)體量子點(diǎn)的發(fā)光二極管(QLED)器件具有色彩飽和、純度高、單色性佳、顏色可調(diào)以及可以用比較簡(jiǎn)單的溶液制備方法獲得并可大規(guī)模制備等優(yōu)點(diǎn),解決了有機(jī)發(fā)光二極管(OLED)中有機(jī)發(fā)光材料的發(fā)光不穩(wěn)定、顏色不可調(diào)、半峰寬較寬生產(chǎn)成本高和操作工藝復(fù)雜等缺點(diǎn),是下一代平板顯示和固態(tài)照明的理想選擇。本論文主要研究了通過增加量子點(diǎn)電致發(fā)光器件中載流子的傳輸來改善和提高器件的發(fā)光性能。(1)以Poly-TPD和PVK作為空穴傳輸材料,分別制備了兩者混合溶液作為空穴傳輸層、分層旋涂作為空穴傳輸層的器件,兩者在電流特性和發(fā)光特性上均較標(biāo)準(zhǔn)器件有所提升。在復(fù)合空穴傳輸層器件中,不同Poly-TPD和PVK混合比例的器件在性能上有所差異,當(dāng)兩者比例為1：1時(shí),器件發(fā)光性能最優(yōu)。分層旋涂器件中,PVK層的厚度(控制PVK不同濃度)影響器件的載流子的注入,當(dāng)PVK濃度為4mg/mL時(shí),器件發(fā)光亮度最大。(2)制備了倒置結(jié)構(gòu)的綠光量子點(diǎn)發(fā)光器件,運(yùn)用納米氧化鋅顆粒作為電子傳輸層,通過在ZnO層和量子點(diǎn)層中間加入超薄電荷緩沖層PFN,利用PFN的電荷傳輸特性,增加器件中電子注入和傳輸,提高器件的發(fā)光亮度,當(dāng)超薄層旋涂轉(zhuǎn)速為2500rpm, PFN厚度最佳,器件的性能達(dá)到最優(yōu),發(fā)光亮度最大。最后,我們又利用空穴型有機(jī)聚合物材料發(fā)光材料MEH-PPV和核殼結(jié)構(gòu)藍(lán)光量子點(diǎn)CdSe/ZnS制備了復(fù)合器件,研究了復(fù)合型器件的電致發(fā)光光譜,研究了藍(lán)光量子點(diǎn)QDs(B)摻雜MEH-PPV復(fù)合體系的發(fā)光特性及量子點(diǎn)QDs(B)摻雜濃度(質(zhì)量分?jǐn)?shù))不同對(duì)器件發(fā)光特性的影響,同時(shí)也制備了非摻雜的白光發(fā)光二極管器件,并從器件的性能不同分析了摻雜法和非摻雜法對(duì)于器件中載流子傳輸?shù)膹?qiáng)弱。研究如何增加量子點(diǎn)器件中載流子的注入和傳輸,有利于器件平衡器件中的正負(fù)載流子,降低漏電流的產(chǎn)生,提高器件的發(fā)光性能。這為量子點(diǎn)電致發(fā)光器件的大規(guī)模生產(chǎn)乃至商業(yè)化提供了重要指導(dǎo)和參考。
[Abstract]:Quantum dot fluorescent material is a kind of excellent performance, broad excitation spectrum, narrow emission spectrum, light color can be controlled by adjusting the particle size, photochemical stability, high electron mobility, quantum dots in electroluminescence has great potential for application in light emitting devices. The light emitting diode semiconductor based on quantum dots (QLED) device with high purity, color saturation, color is good, color is adjustable and can use relatively simple solution preparation method and can obtain the advantages of large-scale production, solve the organic light emitting diode (OLED) in organic light emitting luminescent material is not stable, the color is not adjustable, disadvantages of wider half peak production the high cost and complex operation process, is the next generation of flat panel display and solid-state lighting. This paper mainly studies the transmission through increased quantum dot electroluminescent device carrier to improve and enhance The luminescence performance of the device. (1) with Poly-TPD and PVK as hole transport materials, were prepared by the mixed solution as the hole transport layer, layered spin coating device as a hole transport layer, both in the current characteristics and luminescent properties were improved. Compared with the standard device in composite hole transporting layer, different devices Poly-TPD and PVK mix proportion of the differences in the performance, when the ratio of 1:1, the luminescence performance optimal. Layered spin coating device, the thickness of the PVK layer (PVK concentration control) effect of carrier injection device, when the PVK concentration is 4mg/mL, the maximum brightness device (2) preparation. The green light quantum point inverted light-emitting devices, the use of nano particles as Zinc Oxide electron transport layer, through the middle of the ZnO layer and the quantum dot layer with thin buffer layer using the PFN charge, the charge transport properties of PFN, increase the device Electron injection and transmission, improve the brightness of the device, when the thin layer spin coating speed is 2500rpm, the thickness of PFN, the performance of the device to achieve optimal brightness maximum. Finally, we use the hole type organic polymer composite devices emitting blue light MEH-PPV and core-shell structure material of CdSe/ZnS quantum dots preparation, electroluminescence spectroscopic study on the composite device, on the blue QDs quantum dots (B) luminescent properties of doped MEH-PPV composites and QDs quantum dots (B) doping concentration (mass fraction) influence on the luminescence properties of the devices, but also for the non doped light emitting diode devices were prepared, and the performance of the device is different from the analysis of the doping method and non doping method for carrier transfer device in strength. How to increase the charge injection and transport of quantum dot devices, is conducive to the balance of positive and negative carrier device in the device, It can reduce the leakage current and improve the luminescent performance of the device. This provides important guidance and reference for large-scale production and commercialization of quantum dot electroluminescent devices.

【學(xué)位授予單位】：北京交通大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN383.1;O471.1

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本文編號(hào)：1365728