發(fā)布時間：2019-05-08 17:15

【摘要】：本工作采用甚高頻等離子體化學(xué)氣相沉積(VHF-PECVD)技術(shù)制備了P型微晶硅氧窗口層薄膜,討論了P型微晶硅氧的光電特性隨硼烷摻雜率的變化。采用紫外-可見透射光譜,拉曼光譜,傅立葉變換紅外吸收光譜(FTIR),暗電導(dǎo)測量對薄膜的光電特性進(jìn)行了表征。結(jié)果表明,P型微晶硅氧材料均表現(xiàn)為微晶態(tài),隨著硼烷摻雜率增加,晶化程度逐步降低,暗電導(dǎo)率快速減小,光學(xué)帶隙持續(xù)降低。該結(jié)果可歸因于硼烷摻雜的增加抑制晶化使得非晶成分增多,有效摻雜率降低導(dǎo)致薄膜電導(dǎo)率下降,另一方面,對硅氧物相分離的阻礙作用導(dǎo)致薄膜帶隙下降。硼烷摻雜率為0.4%樣品的電導(dǎo)率高達(dá)0.158 S/cm且光學(xué)帶隙為2.2 e V,兼具高透射性和良好電導(dǎo)率,可作為高效硅基太陽電池的窗口層。
[Abstract]:P-type microcrystalline silicon oxide window layer films were prepared by very high frequency plasma chemical vapor deposition (VHF-PECVD) technique. The change of photoelectric properties of P-type microcrystalline silicon oxide with borane doping ratio was discussed. The photoelectric properties of the films were characterized by UV-vis transmission spectroscopy, Raman spectroscopy and Fourier transform infrared absorption spectroscopy (FTIR),). The results show that all P-type microcrystalline silicon oxygen materials are microcrystalline, with the increase of borane doping rate, the crystallization degree decreases gradually, the dark conductivity decreases rapidly, and the optical band gap decreases continuously. The results can be attributed to the increase of borane doping to inhibit crystallization, the increase of amorphous composition, the decrease of effective doping rate and the decrease of electrical conductivity. On the other hand, the hindrance to phase separation of siloxane leads to the decrease of band gap. The sample with 0.4% borane has a high conductivity of 0.158 S/cm and an optical band gap of 2.2eV. It has both high transmittance and good conductivity. It can be used as a window layer for high efficiency silicon-based solar cells.
【作者單位】： 中國華能集團(tuán)清潔能源技術(shù)研究院有限公司;河北大學(xué)物理科學(xué)與技術(shù)學(xué)院;
【基金】：華能集團(tuán)科技項(xiàng)目(TW-13-CERI01)
【分類號】：TM914.4

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