基于SiC MOSFET的低壓交流伺服驅(qū)動器的研究
發(fā)布時間：2019-01-05 15:29
【摘要】：隨著社會發(fā)展,以永磁同步電機(jī)為控制對象的交流伺服系統(tǒng)在人們的日常生活、工業(yè)生產(chǎn)和國防建設(shè)等領(lǐng)域日益得到廣泛的應(yīng)用。然而,一些需要在野外作業(yè)的情況下,無法為伺服系統(tǒng)提供高壓交流電源,只能以24V直流蓄電池作為電源。當(dāng)采用低壓電源供電時,交流伺服系統(tǒng)就會出現(xiàn)壓降大、損耗高、體積增大等問題。相比于傳統(tǒng)SiIGBT,新型SiCMOSFET具有開關(guān)頻率高、通態(tài)壓降低、損耗小、工作溫度高等優(yōu)點(diǎn)。本文以SiC MOSFET功率模塊代替IGBT功率模塊展開研究,以克服低壓交流伺服系統(tǒng)壓降大、損耗高的技術(shù)難點(diǎn)。尤其是高開關(guān)頻率時,采用SiC MOSFET設(shè)計低壓交流伺服系統(tǒng)損耗方面的優(yōu)勢更明顯,對于進(jìn)一步研究高性能低壓交流伺服系統(tǒng)具有現(xiàn)實(shí)意義和應(yīng)用價值。首先,介紹了 SiC MOSFET的結(jié)構(gòu)及特點(diǎn),建立了 SiC MOSFET的功能模型并進(jìn)行仿真,分析了 SiC MOSFET的開關(guān)特性、管壓降和開關(guān)損耗,從理論上得出SiC MOSFET的管壓降和開關(guān)損耗都低于同功率等級的IGBT,開關(guān)頻率越高時,SiC MOSFET和IGBT的開關(guān)損耗差距越大。其次,分析了主回路的工作原理,分別以SiC MOSFET和IGBT仿真模型搭建了主回路,以SPWM信號為觸發(fā)信號,以正弦波為調(diào)制波,進(jìn)行了主回路工作過程中管壓降和損耗的仿真,通過仿真結(jié)果的對比分析,證明了 SiC MOSFET設(shè)計的主回路管壓降和損耗更低,尤其是在高開關(guān)頻率時,SiC MOSFET設(shè)計的主回路損耗方面的優(yōu)勢更明顯,更適合低壓交流伺服驅(qū)動器的應(yīng)用。最后,以TMS320F2812為控制核心,分別以CREE公司的CCS050M12CM2型號SiC MOSFET功率模塊和三菱公司的PM100RLA120型號IGBT功率模塊為主回路設(shè)計了低壓交流伺服驅(qū)動器的軟硬件,搭建了低壓交流伺服驅(qū)動器的實(shí)驗(yàn)平臺。利用搭建的實(shí)驗(yàn)平臺,對基于兩種功率模塊設(shè)計的伺服驅(qū)動器進(jìn)行了通態(tài)壓降和損耗方面的測試,實(shí)驗(yàn)結(jié)果再次證明了基于SiC MOSFET設(shè)計的低壓交流伺服驅(qū)動器通態(tài)壓降和損耗均低于基于IGBT設(shè)計的低壓交流伺服驅(qū)動器,尤其是在高開關(guān)頻率時,基于SiC MOSFET設(shè)計的低壓交流伺服驅(qū)動器損耗方面的優(yōu)勢更明顯,對于提高低壓伺服驅(qū)動器的電壓利用率,縮小低壓伺服驅(qū)動器的體積,提高低壓伺服驅(qū)動器的功率密度很有意義。
[Abstract]:With the development of society, the AC servo system with permanent magnet synchronous motor (PMSM) as the control object has been widely used in people's daily life, industrial production and national defense construction. However, some need to work in the field, the servo system can not provide high voltage AC power supply, can only use 24V DC battery as the power supply. When using low voltage power supply, AC servo system will have the problems of high voltage drop, high loss and increasing volume. Compared with the traditional SiIGBT, SiCMOSFET, the new SiCMOSFET has the advantages of high switching frequency, low on-state voltage, low loss and high operating temperature. In this paper, SiC MOSFET power module is used instead of IGBT power module to overcome the technical difficulties of high voltage drop and high loss in low voltage AC servo system. Especially at high switching frequency, the loss of low voltage AC servo system designed by SiC MOSFET is more obvious, which has practical significance and application value for further research on high performance low voltage AC servo system. Firstly, the structure and characteristics of SiC MOSFET are introduced, the functional model of SiC MOSFET is established and simulated, and the switching characteristics, voltage drop and switching loss of SiC MOSFET are analyzed. Theoretically, it is concluded that the higher the switching frequency of SiC MOSFET, the bigger the gap between, SiC MOSFET and IGBT when the voltage drop and switching loss of, SiC MOSFET are lower than those of IGBT, with the same power level. Secondly, the working principle of the main loop is analyzed. The main circuit is built with the SiC MOSFET and IGBT simulation models, the SPWM signal is used as the trigger signal and the sinusoidal wave is used as the modulation wave to simulate the tube pressure drop and loss during the main circuit operation. Through the comparison and analysis of the simulation results, it is proved that the voltage drop and loss of the main loop designed by SiC MOSFET are lower, especially the advantages of the main circuit loss designed by, SiC MOSFET at high switching frequency are more obvious. It is more suitable for the application of low voltage AC servo driver. Finally, the hardware and software of the low voltage AC servo driver are designed with TMS320F2812 as the control core, CREE's CCS050M12CM2 model SiC MOSFET power module and Mitsubishi's PM100RLA120 IGBT power module as the main loop. The experiment platform of low voltage AC servo driver is built. The on-state pressure drop and loss of the servo driver based on two kinds of power modules are tested by using the experimental platform. The experimental results show that the on-state voltage drop and loss of the low-voltage AC servo driver based on SiC MOSFET are lower than those of the low-voltage AC servo driver based on IGBT, especially at high switching frequency. The loss of low voltage AC servo driver based on SiC MOSFET is more obvious, which is significant for improving the voltage utilization ratio of low voltage servo driver, reducing the volume of low voltage servo driver and increasing the power density of low voltage servo driver.
【學(xué)位授予單位】：冶金自動化研究設(shè)計院
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM921.541;TN386
[Abstract]:With the development of society, the AC servo system with permanent magnet synchronous motor (PMSM) as the control object has been widely used in people's daily life, industrial production and national defense construction. However, some need to work in the field, the servo system can not provide high voltage AC power supply, can only use 24V DC battery as the power supply. When using low voltage power supply, AC servo system will have the problems of high voltage drop, high loss and increasing volume. Compared with the traditional SiIGBT, SiCMOSFET, the new SiCMOSFET has the advantages of high switching frequency, low on-state voltage, low loss and high operating temperature. In this paper, SiC MOSFET power module is used instead of IGBT power module to overcome the technical difficulties of high voltage drop and high loss in low voltage AC servo system. Especially at high switching frequency, the loss of low voltage AC servo system designed by SiC MOSFET is more obvious, which has practical significance and application value for further research on high performance low voltage AC servo system. Firstly, the structure and characteristics of SiC MOSFET are introduced, the functional model of SiC MOSFET is established and simulated, and the switching characteristics, voltage drop and switching loss of SiC MOSFET are analyzed. Theoretically, it is concluded that the higher the switching frequency of SiC MOSFET, the bigger the gap between, SiC MOSFET and IGBT when the voltage drop and switching loss of, SiC MOSFET are lower than those of IGBT, with the same power level. Secondly, the working principle of the main loop is analyzed. The main circuit is built with the SiC MOSFET and IGBT simulation models, the SPWM signal is used as the trigger signal and the sinusoidal wave is used as the modulation wave to simulate the tube pressure drop and loss during the main circuit operation. Through the comparison and analysis of the simulation results, it is proved that the voltage drop and loss of the main loop designed by SiC MOSFET are lower, especially the advantages of the main circuit loss designed by, SiC MOSFET at high switching frequency are more obvious. It is more suitable for the application of low voltage AC servo driver. Finally, the hardware and software of the low voltage AC servo driver are designed with TMS320F2812 as the control core, CREE's CCS050M12CM2 model SiC MOSFET power module and Mitsubishi's PM100RLA120 IGBT power module as the main loop. The experiment platform of low voltage AC servo driver is built. The on-state pressure drop and loss of the servo driver based on two kinds of power modules are tested by using the experimental platform. The experimental results show that the on-state voltage drop and loss of the low-voltage AC servo driver based on SiC MOSFET are lower than those of the low-voltage AC servo driver based on IGBT, especially at high switching frequency. The loss of low voltage AC servo driver based on SiC MOSFET is more obvious, which is significant for improving the voltage utilization ratio of low voltage servo driver, reducing the volume of low voltage servo driver and increasing the power density of low voltage servo driver.
【學(xué)位授予單位】：冶金自動化研究設(shè)計院
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM921.541;TN386
【參考文獻(xiàn)】
相關(guān)期刊論文 前10條
1 何亮;劉揚(yáng);;第三代半導(dǎo)體GaN功率開關(guān)器件的發(fā)展現(xiàn)狀及面臨的挑戰(zhàn)[J];電源學(xué)報;2016年04期
2 劉仿;肖嵐;;SiC MOSFET開關(guān)特性及驅(qū)動電路的設(shè)計[J];電力電子技術(shù);2016年06期
3 梁美;鄭瓊林;可，
本文編號：2401953
本文鏈接：http://sikaile.net/kejilunwen/dianlidianqilunwen/2401953.html
最近更新
教材專著
