【摘要】：晶硅電池在全球光伏市場(chǎng)始終占據(jù)著80%以上的份額,其中多晶硅電池連續(xù)多年成為晶硅產(chǎn)品的主流。近幾年發(fā)展起來的金剛線硅片切割技術(shù)具有環(huán)境友好、損耗少、切片效率高等諸多優(yōu)點(diǎn),可使硅片單片成本降低0.4-0.6元,是公認(rèn)的先進(jìn)切片技術(shù),已在單晶硅片的切割上實(shí)現(xiàn)了全面推廣。但是該技術(shù)在多晶方面的推廣遇到了很大的障礙,這是由于金剛切割片表面存在著一層非晶硅,影響了傳統(tǒng)多晶硅HF/HNO3制絨體系的有效性。由此,亟需一種新的制絨方法來解決金剛線切多晶硅的制絨難題。在目前的解決方案中,金屬催化化學(xué)刻蝕(MCCE)黑硅制備工藝由于其襯底選擇性低、價(jià)格低廉、與現(xiàn)有產(chǎn)線兼容等優(yōu)點(diǎn),而成為業(yè)界研究的焦點(diǎn)。本文系統(tǒng)研究了多晶硅金剛片的金屬銀催化化學(xué)刻蝕機(jī)理、工藝技術(shù)以及不同絨面結(jié)構(gòu)的光學(xué)性能。首先,研究了在HF/AgNO3/H2O2體系中,MCCE制備黑硅的機(jī)理:金屬銀納米顆粒的電化學(xué)沉積以及在銀納米顆粒催化下硅原子被雙氧水氧化并被氫氟酸溶解的過程。隨后,研究了各成分配比對(duì)黑硅結(jié)構(gòu)及其光學(xué)性能的影響,并通過配比優(yōu)化得到了一種用于做電池的黑硅結(jié)構(gòu)。由于未經(jīng)后處理的黑硅結(jié)構(gòu)表面粗糙,導(dǎo)致復(fù)合較大,嚴(yán)重影響電池的性能,需要對(duì)黑硅結(jié)構(gòu)進(jìn)行優(yōu)化。因此,接下來研究了黑硅結(jié)構(gòu)的優(yōu)化工藝。采用KOH/IPA的混合溶液對(duì)黑硅結(jié)構(gòu)進(jìn)行優(yōu)化,得到納米倒金字塔、納米金字塔、納米方孔、納米圓坑等一系列結(jié)構(gòu),且其表面光滑、開口大,反射率低于15%。采用預(yù)處理的156.75*156.75mm2金剛線切P型多晶硅片經(jīng)金屬銀催化刻蝕方法制得黑硅結(jié)構(gòu)并優(yōu)化后,結(jié)合產(chǎn)線工藝完成金剛線切黑硅電池的制備。制備得到的黑硅電池較砂漿切常規(guī)電池短路電流ISC提升114.9mA,開路電壓VOC并未降低,填充因子FF提升0.74%,最終使得轉(zhuǎn)換效率提升0.32%。金剛線切黑硅電池優(yōu)異的性能證明了MCCE制備黑硅的工藝在解決金剛線切多晶硅制絨難題以及提升電池性能方面具有巨大的優(yōu)勢(shì),同時(shí),由于此套工藝簡(jiǎn)單,與產(chǎn)線工藝完美兼容,非常適合商業(yè)化生產(chǎn)。
[Abstract]:Crystal silicon cells have always occupied more than 80% of the global photovoltaic market, among which polysilicon cells have been the mainstream of crystal silicon products for many years. The wafer cutting technology developed in recent years has many advantages, such as friendly environment, low loss, high chip efficiency and so on. It can reduce the cost of monolithic silicon wafer by 0.4-0.6 yuan, which is recognized as an advanced slicing technology. It has been widely used in the cutting of single crystal silicon wafer. However, the popularization of this technology in polycrystal has encountered great obstacles, which is due to the existence of a layer of amorphous silicon on the surface of the diamond chip, which affects the effectiveness of the traditional polysilicon HF/HNO3 velvet system. Therefore, a new method is urgently needed to solve the problem of making polysilicon. In the current solution, metal-catalyzed chemical etching of (MCCE) black silicon has become the focus of research due to its low substrate selectivity, low price and compatibility with existing production lines. In this paper, the mechanism of silver catalyzed chemical etching of polysilicon wafers, the process technology and the optical properties of different suede structures have been systematically studied. Firstly, the mechanism of preparing black silicon in HF/AgNO3/H2O2 system was studied: electrochemical deposition of silver nanoparticles and oxidation of silicon atoms by hydrogen peroxide and dissolution by hydrofluoric acid under the catalysis of silver nanoparticles. Then, the influence of the composition ratio on the black silicon structure and its optical properties was studied, and a kind of black silicon structure was obtained by optimizing the ratio. Due to the rough surface of the black silicon structure without post-treatment, it is necessary to optimize the black silicon structure because of the large composition, which seriously affects the performance of the battery. Therefore, the optimization process of black silicon structure is studied. The structure of black silicon was optimized by using the mixed solution of KOH/IPA. A series of structures, such as nanometer inverted pyramid, nanometer square hole and nanometer round pit, were obtained. The surface of the structure was smooth, the opening was large, and the reflectivity was lower than 15%. The black silicon structure was prepared by the metal silver catalytic etching method with the pretreated 156.75*156.75mm2 linear cut P polysilicon wafer, and the fabrication of the silicon battery was completed by the combination of the production line process and the metal silver catalytic etching method. The prepared black silicon battery has a short circuit current of 114.9 Ma, an open circuit voltage of 114.9 Ma, a filling factor FF of 0.74 and a 0.32% increase of conversion efficiency. The excellent performance of diamond wire cut black silicon battery proves that the process of preparing black silicon by MCCE has great advantages in solving the problem of making velvet and improving the performance of the battery. At the same time, because of the simplicity of this process, Perfect compatibility with production line process, very suitable for commercial production.
【學(xué)位授予單位】：中國(guó)科學(xué)院大學(xué)(中國(guó)科學(xué)院物理研究所)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN304.12;TM914.4

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