本文選題：單晶硅太陽電池 + 臭氧氧化法��； 參考：《內蒙古大學》2016年碩士論文

【摘要】：單晶硅太陽能電池轉化效率高(實驗室轉換效率達到25.6%,產業(yè)化生產的平均效率為19.5%),生產技術成熟,一直以來都是光伏產業(yè)發(fā)展的重點。本文主要是在常規(guī)單晶硅太陽電池生產中,引入03氧化技術,在電池片表面生成SiO2-SiNx鈍化減反射膜結構,生產具備抗電勢誘導衰減效應(PID, Potential Induced Degradation)能力的單晶硅太陽電池片的工藝方法,研究了所生成的鈍化減反射膜的微觀結構、以及薄膜的光學性能和生產出的電池片的電性能。用臭氧對濕法刻蝕后的硅片上表面氧化10s,在硅片上表面生成一層納米級的Si02薄膜。結果表明,當臭氧濃度≥1200 ppm時,親水性測試結果符合抗PID的工藝標準要求,生成的Si02薄膜厚度約為10 nm。對臭氧氧化過的硅片,采用等離子體增強氣相沉積法(PECVD),在460℃的溫度條件下,通過控制NH3和SiH4的流量比和淀積時間,在其表面生成雙層致密程度不同的氮化硅減反射薄膜。經測試結果表明,含Si多的氮化硅膜層更為致密。生成的雙層氮化硅薄膜總厚度為70-82 nm,折射率為2.1000±0.0800。最后,對采用這兩種工藝方法生產出的單晶硅太陽電池片進行電性能參數(shù)測試,電池的平均開路電壓和平均轉換效率都得到了提升。
[Abstract]:The conversion efficiency of monocrystalline silicon solar cells is high (the conversion efficiency of laboratory reaches 25.6, the average efficiency of industrialization is 19.5%), and the production technology is mature, which has always been the focus of the development of photovoltaic industry. In this paper, the structure of SiO2-SiNx passivated antireflection film was formed on the surface of single crystal silicon solar cell by the introduction of 03 oxidation technology in the production of conventional monocrystalline silicon solar cell. The process method of producing single crystal silicon solar cell with the ability of resisting potential induced attenuation effect and Potential Induced Degradation) is studied. The microstructure of the passivated antireflection film, the optical properties of the film and the electrical properties of the produced film are studied. A nanoscale Si02 film was formed on the surface of wet etching silicon by ozone oxidation for 10 s. The results show that when the ozone concentration is greater than 1200 ppm, the hydrophilic test results meet the requirements of the process standard for PID resistance, and the thickness of the Si02 film is about 10 nm. Silicon nitride thin films with different densification degree were formed on the surface of ozonated silicon wafers by plasma enhanced vapor deposition at 460 鈩，

本文編號：1951406