本文選題：P型 + 量子點敏化太陽能電池��； 參考：《河北大學》2017年碩士論文

【摘要】：量子點敏化太陽能電池(QDSSCs)作為染料敏化太陽能電池(DSSCs)的衍生物,因具有低廉的價格、簡單易操作的制備工藝、高的理論轉換效率等優(yōu)勢,受到極大的關注。目前N型半導體氧化物作為光陽極的研究已經(jīng)相對成熟,人們開始研究P型半導體氧化物,其具有較寬帶隙、合適的價帶位置等特點,對于P-N型疊層敏化太陽能電池發(fā)展和應用具有重要的意義。氧化鎳(NiO)由于具有良好的穩(wěn)定性以及傳導性等優(yōu)點,是一種應用最廣泛的P型半導體氧化物。然而,對于P型QDSSCs的制備材料及其光電性能研究還不夠深入。本文采用兩種方法制備出不同形貌的NiO,并以量子點(QDs)敏化NiO作為光陰極組裝成電池,從材料的合成、電池的光電性能等方面對其進行研究。首先,采用水熱法以及均相沉積法分別制備出海膽狀和花狀NiO,并研究了不同制備條件對海膽狀NiO形貌的影響。研究發(fā)現(xiàn),在4~16 h范圍內(nèi),隨著反應時間的增加,NiO的形貌由不均勻的海膽狀逐漸變成粒度尺寸分布均勻的海膽狀,然后逐漸變成球狀,最后產(chǎn)生不成形的沉淀物。在80°C~120°C范圍內(nèi),溫度對NiO的形貌影響不大。其次,采用化學浴沉積法(CBD)制備出PbS敏化海膽狀NiO作為光陰極組裝成電池,并研究不同形貌NiO、NiO膜厚、PbS沉積次數(shù)對電池光電性能的影響。通過對樣品的材料表征分析發(fā)現(xiàn),PbS均勻地沉積在NiO薄膜表面,當沉積次數(shù)分別為4次時,樣品的光吸收能力最強。通過對電池的光電性能表征分析發(fā)現(xiàn),海膽狀NiO在120°C下反應8 h時,形貌最好。當NiO膜厚約為3μm,Pb S沉積次數(shù)為3次時,電池的效率最大可達1.07%,IPCE值最大可達到50%。最后,采用CBD制備出CdSe敏化花狀NiO作為光陰極組裝成電池,并研究CdSe沉積次數(shù)對電池光電性能的影響。通過對樣品的材料表征分析發(fā)現(xiàn),CdSe與NiO良好的鏈接在一起,均勻地沉積在NiO薄膜表面。當沉積次數(shù)為10次時,樣品的光吸收能力最強。通過對電池的光電性能表征分析發(fā)現(xiàn),當CdSe沉積次數(shù)為8次時,電池的效率最高,達到1.06%。IPCE大約為40%。對NiS和Pt電極進行EIS測試,可知NiS比Pt對電極能夠更快地催化氧化還原電對的循環(huán)再生。
[Abstract]:As a derivative of dyestuff sensitized solar cell, quantum dot sensitized solar cell (QDS-SCs) has attracted much attention for its advantages of low cost, simple and easy to operate preparation process, high theoretical conversion efficiency and so on. At present, the study of N-type semiconductor oxide as photoanode has been relatively mature. People began to study P-type semiconductor oxide, which has the characteristics of wide band gap, suitable valence band position, and so on. It is of great significance for the development and application of P-N laminated solar cells. Nickel oxide nio (nio) is one of the most widely used P type semiconductor oxides due to its good stability and conductivity. However, the preparation and optoelectronic properties of P-type QDSSCs are not well studied. In this paper, different morphologies of nio were prepared by two methods, and the NiO sensitized by quantum dots was used as photocathode to assemble the battery. The synthesis of materials and the photoelectric properties of the battery were studied. Firstly, sea urchin and flower-like nio were prepared by hydrothermal method and homogeneous deposition method, and the effects of different preparation conditions on the morphology of sea urchin NiO were studied. It was found that the morphology of nio changed from non-uniform sea urchin shape to sea urchin shape with the increase of reaction time in the range of 4 ~ 16 h. Temperature has little effect on the morphology of NiO in the range of 80 擄C ~ 120 擄C. Secondly, PbS sensitized sea urchin (NiO) was prepared by chemical bath deposition (CBD) as photocathode, and the effect of thickness of nio film on the photovoltaic properties of the battery was studied. It is found that PBS is uniformly deposited on the surface of NiO thin films through the analysis of the material characterization. When the deposition times are 4 times respectively, the optical absorption ability of the samples is the strongest. It was found that the morphology of sea urchin NiO was the best when it reacted at 120 擄C for 8 h. When the thickness of NiO film is about 3 渭 m PbS deposition times is 3 times, the maximum efficiency of the battery can reach 1.07% and the maximum value of IPCE can reach 50%. Finally, CBD was used to fabricate CdSe sensitized NiO as photocathode, and the effect of the number of CdSe deposition times on the photovoltaic performance of the battery was studied. It was found that CdSe was well linked to NiO and deposited uniformly on the surface of NiO thin films. When the deposition times are 10 times, the photoabsorption ability of the sample is the highest. It is found that when the number of CdSe deposition is 8 times, the efficiency of the battery is the highest, and the 1.06%.IPCE is about 40%. The EIS measurements of NiS and Pt electrodes show that NiS can catalyze the regeneration of redox pairs faster than that of Pt electrodes.
【學位授予單位】：河北大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TM914.4

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本文編號：1829321