本文選題：光電材料 + 太陽(yáng)能　； 參考：《光子學(xué)報(bào)》2017年11期

【摘要】：結(jié)合反應(yīng)離子刻蝕法和掩膜法在n型硅片表面制備出圓錐狀結(jié)構(gòu)黑硅,利用濕法氧化法在硅片表面氧化出一層超薄SiOx,采用磁控濺射法在其表面沉積一層摻錫氧化銦(IndiumTinOxide,ITO)薄膜,在黑硅襯底上制備出ITO/SiOx/n-Si太陽(yáng)電池。通過(guò)硅片表面納米結(jié)構(gòu),增加光吸收,進(jìn)而提高電池轉(zhuǎn)化效率。研究結(jié)果表明,在不同襯底溫度下沉積ITO時(shí),薄膜都呈現(xiàn)出了良好的光學(xué)和電學(xué)性能.250℃時(shí),ITO薄膜性能最優(yōu),在400~1 000nm波長(zhǎng)范圍內(nèi),平均透過(guò)率達(dá)到93.1%,并展現(xiàn)出優(yōu)異的電學(xué)性能.通過(guò)優(yōu)化H_2O_2預(yù)處理時(shí)間,減小了SiOx層中氧空位缺陷,SIS電池短路電流得到明顯提高,從未處理前的26.84mA/cm2提升到經(jīng)H_2O_2處理15min后的34.31mA/cm2.此時(shí),電池性能最優(yōu),轉(zhuǎn)化效率達(dá)到3.61%.
[Abstract]:Conical black silicon was prepared on n-type silicon substrate by reactive ion etching and mask method. A layer of ultra-thin SiOxon was oxidized on the surface of silicon by wet oxidation method. A layer of indium tin oxide ITO film was deposited on the surface by magnetron sputtering. ITO/SiOx/n-Si solar cells were fabricated on black silicon substrate. The photoabsorption can be increased by nanostructure on the surface of silicon wafer, and then the conversion efficiency of the battery can be improved. The results show that the ITO films exhibit excellent optical and electrical properties at different substrate temperatures. The average transmittance of the films reaches 93.1g in the wavelength range of 400-1 000nm and exhibits excellent electrical properties. By optimizing the pretreatment time of H_2O_2, the short-circuit current of SiOx cells with oxygen vacancy defects was significantly increased, and the 26.84mA/cm2 never treated increased to 34.31mA / cm ~ 2 after 15min was treated with H_2O_2. At this time, the battery performance is optimal, conversion efficiency reaches 3.61.
【作者單位】： 南京航空航天大學(xué)材料科學(xué)與技術(shù)學(xué)院江蘇省能量轉(zhuǎn)換材料與技術(shù)重點(diǎn)實(shí)驗(yàn)室;
【基金】：國(guó)家自然科學(xué)基金(No.61176062) 江蘇省前瞻性聯(lián)合研究項(xiàng)目(No.BY2016003-09)資助~~
【分類號(hào)】：TM914.4

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