本文選題：冷卻結(jié)構(gòu) + 相變冷卻　； 參考：《電測(cè)與儀表》2017年22期

【摘要】：大功率電力電子器件的冷卻散熱問(wèn)題,已成為集成化大電容發(fā)展的瓶頸,受到越來(lái)越廣泛的關(guān)注。文中采用相變冷卻技術(shù),設(shè)計(jì)兩種冷板:帶有強(qiáng)化換熱結(jié)構(gòu)和非強(qiáng)化換熱結(jié)構(gòu),用于絕緣柵雙極型晶體管模塊(Insulated Gate Bipolar Transistor IGBT)散熱,對(duì)兩種冷板溫度分布進(jìn)行數(shù)值模擬,并利用自建的實(shí)驗(yàn)平臺(tái)對(duì)兩種冷板的性能進(jìn)行模擬試驗(yàn)。結(jié)果表明:兩種結(jié)構(gòu)的冷板均能滿(mǎn)足功率器件的結(jié)溫要求,同功率條件下,帶有強(qiáng)化換熱結(jié)構(gòu)的冷板溫度更低,具有更好的均溫性,在3 000 W和4 000 W功率下,冷板溫度分別為56.6℃和59.5℃,為系統(tǒng)結(jié)構(gòu)設(shè)計(jì)提供指導(dǎo)。
[Abstract]:The cooling and heat dissipation of high-power power electronic devices has become the bottleneck of the development of integrated large capacitors, and has attracted more and more attention.In this paper, two kinds of cooling plates are designed by using phase change cooling technology: one is with enhanced heat transfer structure and the other is with unstrengthened heat transfer structure, which is used for insulating gate bipolar transistor module insulated Gate Bipolar Transistor IGBT, and the temperature distributions of two kinds of cold plates are numerically simulated.The performance of two kinds of cold plates was simulated by using the self-built experimental platform.The results show that the chilled plates with both structures can meet the junction temperature requirements of power devices. Under the same power condition, the temperature of the chilled plates with enhanced heat transfer structures is lower and has better homogenization, and at the power of 3 000 W and 4 000 W, the temperature of the cold plates with the enhanced heat transfer structure is lower.The temperature of cold plate is 56.6 鈩，

本文編號(hào)：1767049