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  本文選題：單晶硅太陽電池　切入點：PC1D軟件　出處：《內(nèi)蒙古大學》2017年碩士論文

【摘要】：本文在常規(guī)太陽電池生產(chǎn)減反膜工序中引入笑氣(N20),用等離子增強化學氣相沉積法(PECVD)在單晶硅電池表面淀積四層薄膜作為減反射膜,生產(chǎn)具有抗電位誘導(dǎo)衰減(PID)效應(yīng)的單晶硅太陽電池。研究了 PECVD設(shè)備不同工藝參數(shù)對薄膜的影響,并對所成薄膜和電池片進行了測試分析。用PC1D軟件模擬電池減反射層,在模擬得到的電參數(shù)中選出幾組理想膜厚和折射率組合。根據(jù)模擬結(jié)果,在新型笑氣工藝下利用PECVD設(shè)備淀積四層薄膜,經(jīng)過多次實驗分析和不斷調(diào)整工藝,確定沉積減反射層的優(yōu)化工藝參數(shù)。首先在單晶硅片表面沉積一層厚度足夠薄、致密性足夠好的氧化硅層,用來阻止玻璃中的Na+進入電池表面,同時起到表面鈍化的作用。之后沉積氮化硅與氮氧化硅層作為折射率緩沖層,減少膜間高折射率差引起的高消光系數(shù),降低膜間的反射。最后沉積折射率較低的氧化硅層,使薄膜整體達到設(shè)計要求,并與電池封裝材料EVA相匹配。用橢偏儀測試薄膜的厚度和折射率,第一層氧化硅膜厚度10nm,折射率2.4;第二層氮化硅膜厚40nm,折射率2.32;第三層氮氧化硅膜厚25nm,折射率1.98;第四層氧化硅膜厚36nm,折射率1.57。最終,電池表面呈深藍色,成膜均勻無色差。因存在膜間的擴散等因素,減反射層整體厚度74.9,折射率2.16。反射率測試表明,鍍膜后電池平均反射率在5%以下,最低在入射光波長570nm處降低至0.3%,明顯降低了光在電池表面的反射,增加了光的利用率。EDS測試給出:電池內(nèi)Si:N:0=5.35:1.52:1,硅含量較高。生產(chǎn)出的單晶硅電池(156.75mm×156.75mm)各項參數(shù)較好,平均短路電流9.428A,平均光電轉(zhuǎn)化效率19.81%。
[Abstract]:In this paper, nitrous oxide (N20) was introduced into conventional solar cells to produce antireflection films. Four layers of thin films were deposited on the surface of monocrystalline silicon cells by plasma enhanced chemical vapor deposition (PECVD) as antireflection films.Monocrystalline silicon solar cells with PID-resistant potential induced attenuation effect are produced.The influence of different process parameters of PECVD equipment on the film was studied, and the film and battery chip were tested and analyzed.The antireflective layer of the battery is simulated by PC1D software, and several groups of ideal film thickness and refractive index combination are selected from the electrical parameters obtained from the simulation.According to the simulation results, four layers of thin films were deposited by PECVD equipment under the new process of nitrous oxide. After many experiments and continuous adjustment of the process, the optimum process parameters of the deposition antireflection layer were determined.First, a layer of silicon oxide is deposited on the surface of the single crystal silicon wafer, which is thin enough and compact enough to prevent Na from entering the surface of the cell and play the role of surface passivation.Then silicon nitride and silicon oxide layer are deposited as refractive index buffer layer to reduce the high extinction coefficient caused by high refractive index difference between the films and to reduce the reflection between the films.Finally, the silicon oxide layer with low refractive index is deposited, which makes the film meet the design requirements and matches the battery packaging material EVA.The thickness and refractive index of the film are measured by ellipsometer. The thickness of the first layer is 10 nm, the refractive index of the second layer is 2.4, the thickness of the second layer is 40 nm, the refractive index is 2.32, the thickness of the third layer is 25 nm, the refractive index is 1.98, the thickness of the fourth layer is 36 nm, the refractive index is 1.57.Finally, the surface of the battery is dark blue, and the film is uniform and colorless.The overall thickness of antireflection layer is 74.9 and the refractive index is 2.16 due to the existence of diffusion between films.The results of reflectivity test show that the average reflectivity of the cell is less than 5% after coating, and the lowest is at the incident wavelength 570nm, which decreases the reflection of light on the surface of the battery, and increases the utilization ratio of light. The results show that the Si: n: 0 5.355.152: 1: 1, and the silicon content is relatively high.The average short-circuit current is 9.428A and the average photoelectric conversion efficiency is 19.81mm. The parameters of the single crystal silicon battery produced are 156.75mm 脳 156.75mm), the average short-circuit current is 9.428A and the average photoelectric conversion efficiency is 19.81mm.
【學位授予單位】：內(nèi)蒙古大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TM914.41

【參考文獻】

相關(guān)期刊論文 前6條

1 楊娜娜;;非晶硅薄膜太陽電池戶外衰減效應(yīng)的研究[J];隴東學院學報;2016年03期

2 梁吉連;劉平;盧玉榮;張劍鋒;王仕鵬;黃海燕;陸川;;SiN_x減反射層對組件抗PID能力影響[J];太陽能;2016年04期

3 何寶華;杜軍偉;王慧;何濤;徐傳明;張忠衛(wèi);;晶體硅光伏組件抗PID機理研究[J];太陽能學報;2015年11期

4 薛軍凱;;當前我國太陽能光伏發(fā)電的應(yīng)用現(xiàn)狀與趨勢分析[J];科技視界;2014年25期

5 陶亮;;多晶硅組件的電位誘發(fā)衰減的成因及防治[J];科技創(chuàng)新與應(yīng)用;2014年06期

6 馬艷麗;張成;;國內(nèi)太陽能電池專利分析[J];圖書情報工作;2011年S2期

相關(guān)碩士學位論文 前1條

1 張岳同;太陽能電池板綜合測試系統(tǒng)的研究[D];合肥工業(yè)大學;2012年

，

本文編號：1713270