本文關(guān)鍵詞：高阻單晶硅太陽(yáng)電池關(guān)鍵工藝研究　出處：《渤海大學(xué)》2017年碩士論文　論文類(lèi)型：學(xué)位論文

  更多相關(guān)文章： 太陽(yáng)電池 電阻率 方塊電阻 擴(kuò)散 效率

【摘要】：作為解決世界能源危機(jī)的一個(gè)可行的方法,太陽(yáng)電池的開(kāi)發(fā)成為世界各國(guó)廣泛研究的前沿課題。近年來(lái),光伏產(chǎn)業(yè)發(fā)展迅速,已出現(xiàn)多種形式的太陽(yáng)電池,但實(shí)用化的太陽(yáng)電池仍以晶硅太陽(yáng)電池為主。太陽(yáng)電池的研究與開(kāi)發(fā)始終圍繞著提高光電轉(zhuǎn)換效率和降低成本兩個(gè)關(guān)鍵問(wèn)題展開(kāi),而現(xiàn)在,這兩個(gè)問(wèn)題還是沒(méi)有得到全面的解決。本文圍繞這兩個(gè)問(wèn)題展開(kāi)對(duì)單晶硅電池的研究。單晶硅在制備過(guò)程中產(chǎn)生大量的較高電阻率硅片,極少量低阻硅片和超高阻硅片,這無(wú)形中增加了制造成本,即這些高阻硅片并不適應(yīng)現(xiàn)今太陽(yáng)電池的制備工藝,無(wú)法做出理想電池,所以在生產(chǎn)中這些硅片需要回爐重新制備。本論文針對(duì)高阻硅片制備太陽(yáng)電池極其性能展開(kāi)課題研究,主要探究方塊電阻的大小對(duì)太陽(yáng)電池的影響,通過(guò)控制工藝條件影響方阻阻值,在高阻電池制備實(shí)驗(yàn)中摸索條件,找到較好效率的高阻電池制備工藝條件,以期使高阻電池效率得到改善,并提高高阻硅片的利用率,從而降低單晶硅電池的生產(chǎn)成本。本文首先研究常規(guī)太陽(yáng)電池的工藝條件,再探究不同電阻率硅片制備太陽(yáng)電池的可行性,得出用電阻率為3-6?·cm這范圍的硅片可以嘗試不同工藝條件制備太陽(yáng)電池,而其也是除常規(guī)硅片外占比最大的一部分;接著結(jié)合方阻與硅電阻率的關(guān)系,方阻與擴(kuò)散參數(shù)及方阻與電性能參數(shù)的關(guān)系這幾方面,來(lái)探究高電阻率太陽(yáng)電池的工藝,主要研究工藝為制絨工藝,擴(kuò)散工藝及燒結(jié)工藝。通過(guò)大量實(shí)驗(yàn)對(duì)比分析,得到擴(kuò)散工藝參數(shù)主要降低通源量及擴(kuò)散溫度,小氮流量1800sccm降至1350sccm,擴(kuò)散溫度由850℃降至818℃,燒結(jié)工藝參數(shù)主要控制溫度,由780℃降至760℃,制備出高阻太陽(yáng)電池,通過(guò)測(cè)試各項(xiàng)電性參數(shù)及分析對(duì)比,發(fā)現(xiàn)方塊電阻在75?至80?這一范圍時(shí)電池性能較好。研究基本解決高阻電池的制備問(wèn)題,但由于條件有限,還有很多不足之處,需要繼續(xù)改進(jìn),希望可以對(duì)單晶硅電池效率的提高及成本的降低提供參考。
[Abstract]:As a feasible method to solve the world energy crisis, the development of solar cells has become a leading topic in the world. In recent years, photovoltaic industry has developed rapidly, and many kinds of solar cells have emerged. However, the practical solar cells are still mainly crystalline silicon solar cells. The research and development of solar cells have always focused on two key issues: improving the photoelectric conversion efficiency and reducing the cost, but now. These two problems have not been completely solved. This paper focuses on the study of monocrystalline silicon cells. Monocrystalline silicon produces a large number of high resistivity silicon wafers during the preparation process. A very small number of low resistance silicon wafers and ultra-high resistance silicon wafers, which invisibly increase the cost of manufacturing, that is, these high resistance silicon wafers do not adapt to the current preparation process of solar cells, can not make ideal cells. Therefore in the production of these wafers need to be reprepared. This thesis focuses on the preparation of high resistance silicon wafer solar cells and its performance research mainly explore the impact of square resistance on the solar cells. In order to improve the efficiency of high resistance battery, we can find out the preparation conditions of high resistance battery with better efficiency by controlling the influence of process conditions on square resistance resistance. And improve the utilization rate of high resistance silicon wafer, so as to reduce the production cost of single crystal silicon battery. Firstly, this paper studies the process conditions of conventional solar cells, and then explores the feasibility of preparing solar cells with different resistivity silicon wafers. The resistivity is 3-6? 路cm silicon wafer can be used to prepare solar cells under different technological conditions, and it is also the largest proportion of solar cells except conventional silicon wafers. Then combining the relation of square resistance and silicon resistivity, square resistance and diffusion parameter and the relation between square resistance and electrical property parameter, to explore the technology of high resistivity solar cell, the main research process is cashmere making technology. Diffusion process and sintering process. Through a large number of experiments and comparative analysis, the diffusion process parameters mainly reduce the amount of source and diffusion temperature, small nitrogen flow rate of 1800SCcm to 1350sccm. The diffusion temperature was reduced from 850 鈩，

本文編號(hào)：1438303