本文關(guān)鍵詞：噴墨打印技術(shù)在指插式背接觸太陽能電池制造中的應(yīng)用　出處：《南京理工大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 指插式背接觸太陽能電池 噴墨打印 疏水化改性 發(fā)射極 背表面場

【摘要】：環(huán)境污染問題和能源危機(jī)使人們越來越重視對太陽能的利用,光伏產(chǎn)業(yè)也因此得到迅速發(fā)展。當(dāng)前光伏產(chǎn)業(yè)發(fā)展的核心問題是提高太陽能電池的光電轉(zhuǎn)換效率,同時降低其生產(chǎn)成本。指插式背接觸(IBC)太陽能電池是光電轉(zhuǎn)換效率最高的晶硅太陽能電池之一,具有廣闊的市場前景。但是其生產(chǎn)成本高,這就需要我們對傳統(tǒng)的制造工藝加以改進(jìn)。本文研究了用噴墨打印技術(shù)制備IBC太陽能電池的發(fā)射極和背表面場,工作包括這三個部分:(1)將硅片基底進(jìn)行表面疏水化改性,再用硼墨水打印線條。發(fā)現(xiàn)硅片經(jīng)過十四烷基三氯硅烷和正己烷體積比為1:400的溶液改性后,可以打印出較規(guī)整、最細(xì)為630 μm寬的硼線。然后將打印過硼墨水的硅片在不同條件下退火,發(fā)現(xiàn)在950℃C下退火1h可以成功制備發(fā)射極,發(fā)射極的載流子峰值濃度為3.41×1019cm-3,結(jié)深為0.59 μm,方塊電阻為37.81Ω/sq。(2)在不經(jīng)表面處理的硅片上用磷墨水直接打印線條,打印出了較規(guī)整、最細(xì)為159.9 μm寬的磷線。然后將打印過磷墨水的硅片在不同條件下退火,發(fā)現(xiàn)在和硼墨水相同的退火條件下可以成功制備背表面場,背表面場的載流子峰值濃度為2.65×1019cm-3,結(jié)深為0.70μm,方塊電阻為44.7Ω/sq。(3)根據(jù)實驗制得的發(fā)射極和背表面場的各項參數(shù),使用Quokka軟件模擬出了完整的IBC太陽能電池,并不斷變化發(fā)射極寬度,研究電池能量損失和光電轉(zhuǎn)換效率的變化,發(fā)現(xiàn)當(dāng)發(fā)射極寬度為830μm時電池效率可達(dá)23%。說明低成本的噴墨打印技術(shù)可以勝任IBC太陽能電池的發(fā)射極和背表面場的制備。
[Abstract]:Environmental pollution and energy crisis make people pay more and more attention to the utilization of solar energy, and the photovoltaic industry is developing rapidly. The core problem of the current development of photovoltaic industry is to improve the photovoltaic conversion efficiency of solar cells. At the same time, it can reduce the production cost. As one of the most photovoltaic silicon solar cells with the highest photoelectric conversion efficiency, the plugged back contact IBC solar cell has a broad market prospect, but its production cost is high. Therefore, we need to improve the traditional manufacturing process. In this paper, we study the emitter and back surface field of IBC solar cells prepared by inkjet printing technology. The work includes three parts: 1) surface hydrophobic modification of silicon substrate. Then the boron ink was used to print the lines. It was found that the silicon wafer could be printed out by modification of 14 alkyl trichlorosilane and 1: 400 volume ratio of hexane. The thinnest boron wire is 630 渭 m wide. Then the silicon wafer printed with boron ink is annealed under different conditions. It is found that emitter can be successfully prepared at 950 鈩，

本文編號：1409346