本文關(guān)鍵詞：鈣鈦礦太陽電池中新型電子傳輸層的設(shè)計和制備　出處：《吉林大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 鈣鈦礦太陽電池 電子傳輸層 PCBM過渡層 La摻雜TiO_2 光穩(wěn)定性

【摘要】：具有鈣鈦礦結(jié)構(gòu)的有機鹵化鉛材料具有溶液可加工性、載流子擴散距離大、光吸收范圍寬等優(yōu)勢,組裝的鈣鈦礦太陽電池已經(jīng)成為極具潛力的光伏器件。相比于其他類型的太陽電池,鈣鈦礦太陽電池的制備過程對設(shè)備要求較低,有利于降低器件制備成本,目前效率已經(jīng)超過20%,器件的穩(wěn)定性研究也有一定的突破。在鈣鈦礦太陽電池中,電子傳輸層具有促進光生電子/空穴在界面分離、優(yōu)化電子傳輸通道、抑制光生電子/空穴復(fù)合等作用,電子傳輸層的性質(zhì)直接影響器件的性能和穩(wěn)定性。本文將通過摻雜改性和界面處理兩個方面展開鈣鈦礦太陽電池電子傳輸層的研究:1,CH_3NH_3PbI_3(MAPbI_3)是常用的鈣鈦礦太陽電池吸光材料,基于甲脒離子的有機碘化鉛具有更寬的光吸收范圍,是一種極有前景的吸光層材料,在這一研究中我們利用HC(NH2)2Pb I_3(FAPb I_3)制備了平面結(jié)鈣鈦礦太陽電池。平面結(jié)器件具有結(jié)構(gòu)簡單、遲滯效應(yīng)低等優(yōu)勢,但對鈣鈦礦吸光層的質(zhì)量要求比較高。在用兩步法制備FAPb I_3時常常會出現(xiàn)針孔缺陷和黃色δ相,這些缺陷會導(dǎo)致內(nèi)部的復(fù)合過程。在這項研究中,引入[6,6]-phenyl-C61-butyric acid methyl ester(PCBM)作為Ti O_2電子傳輸層與FAPb I_3層的過渡層。SEM圖像表明PCBM過渡層能夠促進FAPb I_3吸光層中晶粒的生長。XRD圖譜表明PCBM層可以抑制黃色δ相的形成,并能增強鈣鈦礦晶體的結(jié)晶度。當(dāng)PCBM前驅(qū)液濃度在最佳的情況下,可以使FAPb I_3平面結(jié)器件的平均太陽光轉(zhuǎn)換效率從6.8%提高到15.1%,并且最優(yōu)濃度下的器件遲滯效應(yīng)很小。阻抗譜表明PCBM過渡層能有效的抑制器件內(nèi)部載流子復(fù)合過程,進而提高了器件性能。2,TiO_2是鈣鈦礦太陽電池中廣泛應(yīng)用的電子傳輸層材料�？梢酝ㄟ^摻入金屬離子調(diào)控Ti O_2性能,以及優(yōu)化Ti O_2/MAPb I_3界面。由于La元素電子未完全占據(jù)的4f或5d軌道,其配位作用有利于界面的緊密結(jié)合,另外,La的穩(wěn)定價態(tài)是正三價,摻入Ti O_2中所產(chǎn)生的電荷補償作用,有利于抑制光生電子/空穴的復(fù)合過程。我們通過噴霧熱解的方法制備摻雜La的Ti O_2薄膜,作為鈣鈦礦器件的電子傳輸層。掃描電子顯微鏡(SEM)測量表明La的摻雜能使Ti O_2薄膜表面更平滑,抑制顆粒熟化過程。在最優(yōu)化的摻雜濃度下,器件的平均效率從12.4%提高到14.4%,最高效率達到17.2%。阻抗測試表明,La摻雜可以降低界面電荷轉(zhuǎn)移電子,并且可以有效提高復(fù)合電阻。此外我們還發(fā)現(xiàn)摻La的二氧化鈦傳輸層能夠抑制MAPb I_3吸光層的分解,從而提高器件的光穩(wěn)定性。
[Abstract]:Organic lead halide with perovskite structure has the advantages of processability, large carrier diffusion distance and wide optical absorption range. The assembled perovskite solar cells have become potential photovoltaic devices. Compared with other types of solar cells, the preparation process of perovskite solar cells requires less equipment, which is beneficial to reduce the cost of device preparation. In perovskite solar cells, the electron transport layer promotes the separation of photogenerated electrons / holes at the interface and optimizes the electron transmission channels. The effect of photoelectron / hole recombination was inhibited. The properties of the electron transport layer directly affect the performance and stability of the device. In this paper, the electron transport layer of perovskite solar cells will be studied by doping modification and interface treatment. Ch _ 3NH _ 3PbI _ 3 is a commonly used photoabsorbent for perovskite solar cells, and organic lead iodide based on formamidine ion has a wider range of light absorption. Is a promising absorbent layer material. In this study, we have fabricated planar perovskite solar cells using HC(NH2)2Pb I _ S _ 3s _ 3 / FAPb / IP _ 3. The planar junction devices have the advantages of simple structure and low hysteresis effect. However, the quality of perovskite absorbent layer is very high. In this study, pinhole defects and yellow 未 phase often occur in the preparation of FAPb I _ 3 by two-step method. These defects will lead to the internal composite process. Introduction. [6. 6) -phenyl-C61-butyric acid methyl. As the transition layer between TiO2 electron transport layer and FAPb I3 layer, SEM images show that PCBM transition layer can promote FAPb. The growth of grains in the absorption layer of I _ 3. The XRD spectra show that the PCBM layer can inhibit the formation of yellow 未 -phase. The crystallinity of perovskite crystal can be enhanced when the concentration of PCBM precursor is optimal. The average solar light conversion efficiency of FAPb I _ 3 planar junction devices can be increased from 6.8% to 15.1%. And the hysteresis effect is very small at the optimal concentration. Impedance spectroscopy shows that the PCBM transition layer can effectively suppress the internal carrier recombination process, and then improve the device performance. 2. TiO_2 is a widely used electron transport layer material in perovskite solar cells. The performance of TiO_2 can be controlled by doping metal ions. And optimizing the interface of TIO _ 2 / MAPb _ I _ 3. Because of the 4f or 5d orbitals which are not completely occupied by the electrons of La element, the coordination action is advantageous to the close combination of the interfaces. The stable valence state of La is the charge compensation produced by doping TIO _ 2 in the normal trivalent state. We prepared La doped TIO _ 2 thin films by spray pyrolysis. As the electron transport layer of perovskite devices, scanning electron microscopy (SEM) measurements show that La doping can smooth the surface of TIO _ 2 thin films. The average efficiency of the device was increased from 12.4% to 14.4, and the maximum efficiency was 17.2. The impedance test showed that under the optimized doping concentration, the average efficiency of the device was increased from 12.4% to 14.4. La doping can reduce the interfacial charge transfer electrons and increase the composite resistance effectively. In addition, we also found that La doped titanium dioxide transport layer can inhibit the decomposition of MAPb ISt3 absorption layer. Thus, the optical stability of the device is improved.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TM914.4

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本文編號：1399373