工作在紅外波段的砷化鎵（GaAs）基納米線激光器在集成光電子學(xué)中起著重要作用.在過(guò)去的十幾年中,納米線激光器領(lǐng)域發(fā)展迅速,但是與工作在紫外和可見(jiàn)波段的材料相比,由于GaAs基材料的特性,近紅外激光器的實(shí)現(xiàn)相對(duì)困難.在本文中,我們著重介紹了GaAs基納米線的最新進(jìn)展,特別是GaAs納米線的光學(xué)性質(zhì)和激射特性.詳細(xì)介紹了GaAs納米線的生長(zhǎng)機(jī)理,包括晶相控制和復(fù)雜結(jié)構(gòu)的生長(zhǎng).回顧并討論了GaAs基納米線的光學(xué)性質(zhì)的影響因素和改進(jìn)方法.最后,展示了GaAs基納米線激光器的設(shè)計(jì)及其最新進(jìn)展. 

【文章頁(yè)數(shù)】：18 頁(yè)

【文章目錄】：
INTRODUCTION
Ga As-BASED NW GROWTH
    Ga As NW growth and crystal phase control
    Doping in Ga As NWs
    Ga As-based QW NW growth
OPTICAL PROPERTY OF Ga As-BASED NWs
    Optical properties of Ga As NWs
    Optical properties of doped Ga As NWs
    Optical properties of passivated Ga As NWs
    Wavelength tunability of Ga As-based alloy NWs
    QW structure in Ga As-based NWs
LASING FROM Ga As-BASED NWs
    Cavity mode of NW lasers
    Threshold reduction of Ga As-based NW lasing
    Optical gain improvement and lasing tunability
    Plasmonic Ga As-based NW lasing
SUMMARY AND PROSPECTS


【參考文獻(xiàn)】：
期刊論文
[1]Ⅲ-Ⅴ族半導(dǎo)體與其異質(zhì)結(jié)納米線的生長(zhǎng)（英文）[J]. 李昂,鄒進(jìn),韓曉東.  Science China Materials. 2016(01)



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