【摘要】：針對架橋生長的半導(dǎo)體型單壁碳納米管中激子的擴散特性,建立激子的一維擴散模型,進而考察研究碳納米管中激子的擴散及復(fù)合發(fā)光過程.通過求解激子的一維擴散方程,模擬在有限長度下的碳管中激子密度、發(fā)光強度隨管長和激子擴散長度之間的變化關(guān)系.研究結(jié)果表明,激子的擴散長度對激子發(fā)光強度有著重要影響,較大的激子擴散長度容易導(dǎo)致激子的邊界淬滅,降低發(fā)光強度和發(fā)光效率.研究結(jié)果不但有助于碳納米管中激子的擴散長度的測量,而且有助于未來對基于碳管的單激子器件尺寸的設(shè)計研究.
[Abstract]:Aiming at the diffusion characteristics of exciton in bridged single-walled carbon nanotubes, the one-dimensional diffusion model of exciton was established, and the diffusion and composite luminescence process of exciton in carbon nanotubes were investigated. By solving the one-dimensional diffusion equation of exciton, the relationship between exciton density and luminous intensity with tube length and exciton diffusion length in carbon tube with finite length is simulated. The results show that the exciton diffusion length has an important effect on the intensity of exciton luminescence, and the larger exciton diffusion length can easily lead to the quenching of exciton boundary and decrease the luminescence intensity and efficiency. The results are not only helpful to the measurement of exciton diffusion length in carbon nanotubes, but also helpful to the design and research of single exciton devices based on carbon tubes in the future.
【作者單位】： 湖州師范學(xué)院理學(xué)院;
【基金】：浙江省自然科學(xué)基金(LY15A040003) 浙江省大學(xué)生科技創(chuàng)新活動計劃暨新苗人才計劃(2015R427012)
【分類號】：TQ127.11;TB383.1

【相似文獻】

相關(guān)期刊論文 前1條

1 李華;劉杰;黃代繪;楊毅;;PtI化合物激子的靜電場行為[J];喀什師范學(xué)院學(xué)報;2005年06期

，

本文編號：2473368