【摘要】：NiO、ZnO和(Zn,Ga)(N,O)一直是科研界廣受關(guān)注的化合物半導(dǎo)體材料,利用其特點(diǎn)人們開發(fā)了多種光電磁應(yīng)用。而異價(jià)摻雜是一種有效的調(diào)控和改善此類半導(dǎo)體材料中的晶體微結(jié)構(gòu),以及電學(xué)性質(zhì)(載流子密度,遷移率),光學(xué)性質(zhì)(光吸收,發(fā)光),磁性質(zhì)等的重要手段。在目前摻雜半導(dǎo)體的工藝中往往采取磁控濺射、固相摻雜等物理方法,但是這些物理方法普遍存在摻雜元素分布不均、工藝復(fù)雜,成本高等的問題。化學(xué)摻雜使基于水溶液體系的共沉淀方法進(jìn)行摻雜,具有條件溫和,摻雜均勻等特點(diǎn)。LDH作為雙金屬復(fù)合層狀氫氧化物,具有金屬元素分布均勻的特點(diǎn),以其為前驅(qū)體制備金屬摻雜氧化物將是極佳的選擇。據(jù)此本論文提出利用元素分布均勻的LDH前驅(qū)體,通過熱解得到均勻摻雜產(chǎn)物,并對其進(jìn)行光電性能測試,對于發(fā)展化學(xué)摻雜半導(dǎo)體的方法有重要學(xué)術(shù)意義。本文利用三種LDH前驅(qū)體熱解法分別構(gòu)筑了均勻摻雜的NiO:Al、 ZnO:Al以及(Zn,Ga)(O,N)等三個(gè)研究體系,并利用SEM、XRD、TEM、 HRTEM、STEM、EXAFS等手段對其物相結(jié)構(gòu)和形貌進(jìn)行了表征。采用旋涂-熱解法制備了納米薄膜材料,并對其進(jìn)行了光學(xué)和電化學(xué)等測試。Ni-Al LDH的高溫(500 ℃C以上)熱解產(chǎn)物在XRD中顯示只有NiO:Al呈結(jié)晶相。鋁的摻雜能引起NiO的晶格收縮,并增大氧化鎳的比表面積以利于電子在材料中的傳導(dǎo)。采用前驅(qū)物旋涂-熱解法制備了NiO:Al薄膜,研究了NiO:Al薄膜的電化學(xué)性質(zhì),并運(yùn)用了計(jì)時(shí)電流法研究電致變色膜的變色速率(CA),測定其光學(xué)透過率。由測試結(jié)果表明鋁離子含量的不同會影響薄膜的光學(xué)和電化學(xué)性能,電致變色性能結(jié)果表明以19:1 Ni-Al LDH為前驅(qū)體制備的電致變色薄膜的變色速率快(漂白速度1.8 s,著色速度4.2s),光學(xué)調(diào)制范圍較大(58%,漂白態(tài)透過率可達(dá)96%),循環(huán)穩(wěn)定好(200次循環(huán)調(diào)制范圍只減少15%)。采用Zn-Al LDH熱解法同樣制備了均勻ZnO:Al,并通過樣品粉末的電阻率和旋涂薄膜的固體紫外測試研究其透明導(dǎo)電性能。由于Zn-Al LDH陽離子可調(diào)范圍小于Ni-Al LDH,所以該方法制備的ZnO:Al中的鋁含量過高導(dǎo)致制備產(chǎn)品電阻較大。而對于(Ga,Zn)(O,N)我們研究了其在氨氣氛圍中的制備條件,結(jié)果表明通過鋅鎵水滑石前驅(qū)體熱解法成功制備了均勻摻鎵氮氧化鋅,并研究了通過調(diào)控陽離子投料比例來制備不同鎵比例的(Ga,Zn)(O,N),最后研究了它的光電催化和光催化降解甲基橙性能,結(jié)果發(fā)現(xiàn)該固溶體對于降解甲基橙效果良好�？傊�,通過LDH前驅(qū)體熱解法我們成功制備了均勻摻雜的氧化鎳、氧化鋅和氮氧化鋅粉體及薄膜材料,通過控制三價(jià)金屬離子濃度,實(shí)現(xiàn)了不同摻雜濃度的NiO:Al, ZnO:Al和(Ga,Zn)(O,N),并探索了這些均勻摻雜體系在光電方面的潛在應(yīng)用。
[Abstract]:NiO,ZnO and (Zn,Ga) (N, O) have been widely concerned about compound semiconductor materials in the field of scientific research. Many kinds of optical and electromagnetic applications have been developed according to their characteristics. Heterovalent doping is an effective means to control and improve the crystal microstructure, as well as electrical properties (carrier density, mobility), optical properties (optical absorption, luminescence), magnetic properties and so on. At present, magnetron sputtering, solid-state doping and other physical methods are often adopted in the process of doping semiconductors. However, there are many problems in these physical methods, such as uneven distribution of doping elements, complex process and high cost. Chemical doping makes the co-precipitation method based on aqueous solution have the characteristics of mild conditions and uniform doping. As a bimetallic composite layered hydroxide, LDH has the characteristics of uniform distribution of metal elements. It would be an excellent choice to prepare metal-doped oxides by precursor system. In this paper, it is proposed that the uniformly doped products can be obtained by pyrolysis of LDH precursors with uniform element distribution, and the optical and electrical properties of the products are tested, which is of great academic significance for the development of chemically doped semiconductors. In this paper, three research systems of uniformly doped NiO:Al, ZnO:Al and (Zn,Ga) (O, N) have been constructed by using three kinds of LDH precursor pyrolysis methods, and SEM,XRD,TEM, HRTEM,STEM, has been used. The phase structure and morphology were characterized by EXAFS. Nano-film materials were prepared by spin-coating-pyrolysis method and tested by optical and electrochemical methods. The pyrolysis products of Ni-Al LDH at high temperature (over 500 鈩，

本文編號：2467853