【摘要】：集成電路的高速發(fā)展對銅互連制作工藝提出了更多要求�，F(xiàn)如今在復(fù)雜三維結(jié)構(gòu)表面沉積高質(zhì)量的銅籽晶層以及制備高效的擴(kuò)散阻擋層成為微電子行業(yè)亟待解決的問題。原子層沉積技術(shù)基于表面自限制飽和化學(xué)吸附的反應(yīng)原理,將會成為未來制備保形超薄薄膜的首選工藝。由于銅原子高溫下極易團(tuán)聚且易與硅基體發(fā)生反應(yīng),同時(shí)互連器件難以承受較高的沉積溫度,發(fā)展低溫原子層沉積技術(shù)成為互連行業(yè)的必要。等離子體技術(shù)能夠降低原子層沉積的反應(yīng)溫度,增加基體表面反應(yīng)活性位點(diǎn),是解決低溫原子層沉積的主要技術(shù)手段。本論文使用等離子體輔助原子層沉積技術(shù),以[Cu(iPr-Me-amd)]2和Mn(tBu2DAD)2分別作為銅前驅(qū)體和錳前驅(qū)體,進(jìn)行了低溫沉積金屬銅薄膜及氮化錳薄膜的研究工作,主要取得以下結(jié)果:(1)首次使用銅脒基前驅(qū)體用于低溫等離子體輔助原子層沉積工藝,當(dāng)沉積溫度為50?C,輸入功率為80 W,原子層沉積循環(huán)為銅前驅(qū)體5 s、沖洗10 s、氫等離子體10 s、沖洗10 s時(shí),在深寬比為10:1的硅基體溝槽中可以得到高純、高保形、連續(xù)、平滑的銅薄膜,其沉積速率為0.071 nm/cycle。利用時(shí)間分辨發(fā)射光譜技術(shù)與石英晶體微量天平技術(shù)對銅薄膜沉積過程進(jìn)行了診斷測量,50?C條件下,化學(xué)吸附于基體表面的Cu(amd)部分發(fā)生分解形成異丙基和N-異丙基乙酰胺。氫等離子體中的原子氫,可將化學(xué)吸附于基體表面的Cu(amd)、異丙基和N-異丙基乙酰胺全部氫化,形成可揮發(fā)的副產(chǎn)物脫離基體表面,得到金屬銅薄膜;(2)首次進(jìn)行等離子體輔助原子層沉積氮化錳薄膜的研究工作,初步研究發(fā)現(xiàn)在沉積溫度250?C和300?C,輸入功率100 W,原子層沉積循環(huán)為錳前驅(qū)體5s、沖洗15 s、氨等離子體10 s、沖洗10 s時(shí),沉積得到η-Mn3N2相薄膜。250?C時(shí)沉積速率為0.078 nm/cycle。當(dāng)40 sccm氨氣與20 sccm氫氣混合,輸入功率為100 W時(shí),同樣得到η-Mn3N2薄膜,而輸入功率為200 W時(shí),沉積得到金屬錳相薄膜。
[Abstract]:The rapid development of integrated circuits has put forward more requirements for copper interconnection fabrication process. Nowadays, the deposition of high-quality copper seed layer and the preparation of high efficiency diffusion barrier layer on the surface of complex three-dimensional structure have become an urgent problem to be solved in the microelectronics industry. Based on the reaction principle of surface self-limiting saturated chemisorption, atomic layer deposition technology will be the first choice for the preparation of thin films in the future. Because copper atoms are easy to agglomerate and react with silicon substrate at high temperature, and the interconnect devices can not bear high deposition temperature, it is necessary to develop low temperature atomic layer deposition technology. Plasma technology can reduce the reaction temperature of atomic layer deposition and increase the reactive sites on the substrate surface. It is the main technical means to solve the problem of low temperature atomic layer deposition. In this paper, the deposition of metal copper thin films and manganese nitride films at low temperature using [Cu (iPr-Me-amd)] 2 and Mn (tBu2DAD) 2 as copper precursors and manganese precursors, respectively, were studied by plasma assisted atomic layer deposition. The main results are as follows: (1) Cuamidine precursor was first used in low temperature plasma assisted atomic layer deposition process. When the deposition temperature was 50 鈩，

本文編號：2417306