【摘要】：磁控濺射是應(yīng)用最普遍的一種濺射沉積技術(shù)。氬與電負(fù)性氣體放電在磁控濺射薄膜制備中發(fā)揮著極其重要的作用。等離子體中各種粒子的分布,電子溫度的大小對(duì)薄膜的質(zhì)量都有極其重要的影響。本項(xiàng)研究通過實(shí)驗(yàn)討論了不同濺射電源,不同功率,Ar/O_2混合比對(duì)基體懸浮電位與飽和電流數(shù)值的變化,得出混合氣體放電中等離子體特性。通過建立二維磁控濺射裝置模型,分別對(duì)磁控濺射中Ar/O_2,Ar/O_2/Cl_2混合氣體放電進(jìn)行了數(shù)值模擬研究,得到主要粒子密度的分布圖和電子溫度圖,研究反應(yīng)腔半徑,混合比與壓強(qiáng)對(duì)等離子體特性的影響。本文研究內(nèi)容如下:實(shí)驗(yàn)分別采用直流和脈沖直流電源濺射,在不同功率的情況下濺射Zn靶,改變氬氧混合比,用直流電源測量基體懸浮電位與飽和電流變化,探討電源驅(qū)動(dòng)方式和混合比對(duì)等離子體行為的影響。結(jié)果表明混合比的變化對(duì)基體附近的離子密度沒有影響。隨著氧氣流量的增加,基體附近的電子能量降低。直流驅(qū)動(dòng)電源濺射條件下,基體的懸浮電位與飽和電流都要比脈沖直流電源的大。隨著濺射功率的增加,懸浮電位不變,飽和電流升高。通過建立二維磁控濺射裝置模型來模擬混合比和壓強(qiáng)對(duì)Ar/O_2混合氣體放電的影響。模擬發(fā)現(xiàn),在壓強(qiáng)為5 mTorr時(shí),Ar2+為混合氣體等離子體中的主要帶電粒子,O_2+為主要氧離子。氣體混合比幾乎不會(huì)改變電子和氬亞穩(wěn)態(tài)粒子的密度。隨著氬比例的增加,Ar2+在等離子體中最大密度也隨增加,O和O_2+的最大密度則會(huì)減小。但混合比的變化不會(huì)改變基體附近的Ar2+與O_2+密度值。隨著氬比例的增加,電子溫度略有下降。主要帶電粒子密度隨著壓強(qiáng)從5mTorr升至10mTorr而單調(diào)增加,電子溫度與氬亞穩(wěn)態(tài)粒子的密度隨壓強(qiáng)增而下降。通過建立新的二維磁控濺射裝置模型來模擬Ar/O_2/Cl_2混合氣體放電的等離子體特性。主要粒子為Ar**,Ar*,e,Ar2+,Cl,Cl_2+,O(3P)和O_2+。當(dāng)反應(yīng)腔擴(kuò)大時(shí),磁場設(shè)計(jì)尤為重要,如果采用不對(duì)稱磁極,可提高基底位置上的等離子密度分布的均勻性。在Ar/O_2/Cl_2的混合比例從9:0.2:1變化到9:1:0.2時(shí),主要粒子幾乎不變,Cl_2+離子和Cl原子的濃度明顯下降,但電子,Ar的激發(fā)態(tài)和O原子的濃度略有增加。主要粒子分布受到壓強(qiáng)的影響,3 mTorr處的電子密度比6 mTorr處的電子密度要低,且更為不均勻。Cl原子和O原子密度的增加則相對(duì)較小。
[Abstract]:Magnetron sputtering is one of the most widely used sputtering deposition techniques. Argon and electronegativity gas discharge play an important role in the preparation of magnetron sputtering films. The distribution of all kinds of particles in plasma and the magnitude of electron temperature have an extremely important influence on the quality of thin films. In this study, the effects of different sputtering power, different power and Ar/O_2 mixing ratio on the suspension potential and saturation current of the substrate are discussed experimentally, and the plasma characteristics in the mixed gas discharge are obtained. By establishing a two-dimensional magnetron sputtering device model, the Ar/O_2,Ar/O_2/Cl_2 mixed gas discharge in magnetron sputtering was numerically simulated, and the distribution of the main particle density and the electron temperature diagram were obtained. The effects of reaction cavity radius, mixing ratio and pressure on plasma characteristics were studied. The main contents of this paper are as follows: DC and pulsed DC power sources are used to sputtering the Zn target under different power conditions, the mixture ratio of argon and oxygen is changed, and the changes of the suspension potential and saturation current of the substrate are measured by DC power supply. The influence of power drive mode and mixing ratio on plasma behavior is discussed. The results show that the change of mixing ratio has no effect on the ion density near the matrix. With the increase of oxygen flow rate, the electron energy near the matrix decreases. The levitation potential and saturation current of the substrate are larger than those of the pulsed DC power supply under the condition of DC power supply sputtering. With the increase of sputtering power, the levitation potential remains constant and the saturation current increases. The effects of mixing ratio and pressure on Ar/O_2 mixed gas discharge were simulated by establishing a two-dimensional magnetron sputtering device model. When the pressure is 5 mTorr, Ar2 is the main charged particle in the mixed gas plasma, and O _ s _ 2 is the main oxygen ion. The mixture ratio of gas hardly changes the density of electron and argon metastable particles. With the increase of argon ratio, the maximum density of Ar2 in plasma increases, while the maximum density of O and O _ 2 decreases. However, the change of mixing ratio does not change the density of Ar2 and O _ 2 near the matrix. With the increase of argon ratio, the electron temperature decreases slightly. The density of the main charged particles increases monotonously with the increase of pressure from 5mTorr to 10mTorr, and the electron temperature and the density of argon metastable particles decrease with the increase of pressure. A new two-dimensional magnetron sputtering device model was developed to simulate the plasma characteristics of Ar/O_2/Cl_2 mixed gas discharge. The main particles are Ar**,Ar*,e,Ar2, Cl,Cl_2, O (3P) and O _ 2. When the reaction cavity is enlarged, the magnetic field design is particularly important. If the asymmetric magnetic pole is used, the uniformity of plasma density distribution on the substrate can be improved. When the mixing ratio of Ar/O_2/Cl_2 changes from 9: 0.2: 1 to 9: 1: 0.2, the main particle is almost unchanged, the concentration of Cl_2 ion and Cl atom decreases obviously, but the electron, The excited state of Ar and the concentration of O atom increase slightly. The electron density at 3 mTorr is lower than that at 6 mTorr, and the density of Cl and O atoms is relatively small.
【學(xué)位授予單位】：遼寧科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TB383.2

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