金屬納結(jié)構(gòu)的紅外光熱特性及其應(yīng)用
[Abstract]:In recent years, metal nanostructures have received extensive attention and research in various fields. As a typical nanometallic structure, metal nanowires have been widely used in biomedical and optoelectronic devices. At present, most of the researches on metal nanowires are focused on the visible or near infrared bands. The characteristics of metal nanowires in the middle and far infrared bands, especially in the far infrared atmospheric window of 8 ~ (14) m, have not been systematically studied. In this paper, the optical and thermal properties of metal nanowires at infrared wavelength, especially at 814 nm band are studied. The properties of metal nanowire thermal detectors are studied in the field of infrared detection, and the prototype devices are designed and fabricated. The performance tests are carried out, which provide theoretical and experimental basis for further optimization of device performance and process improvement. The main contents are as follows: (1) the optical and thermal properties of metal nanowires are simulated by using multi-physical field finite element simulation software COMSOL Multiphysics. The relationship between the geometrical size of metal nanowires and their photothermal properties is studied. It is found that the resonant effect of the antenna of metal nanowires determines the position of absorption peaks, and the aspect ratio of nanowires affects the relative absorption cross section and the media around the nanowires. Nanowire materials, SiO2 thermal insulation layer and reflectance layer also have a significant impact on the characteristics of metal nanowires. (2) the properties of metal nanowire thermal detectors are studied, embryonic devices are prepared, and the process flow and process parameters are explored. The process parameters of lithography and coating are optimized and the problems such as metal film shedding are solved. (3) the performance of the device is tested and the results are in accordance with the simulation prediction and the device performance is excellent. At the same time, the existing problems are analyzed, and the improvement measures are put forward.
【學(xué)位授予單位】:華中科技大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號】:TB383.1
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