【摘要】：本論文采用射頻磁控濺射法,用兩種不同的途徑制備ZnO基透明導(dǎo)電薄膜:(1)分別在通氧和未通氧氣氛中制備ZnO薄膜和ZnO:Al(AZO)薄膜,隨后將薄膜在Ar+H_2中進行退火處理;(2)在Ar+H_2氣氛中直接制備ZnO基薄膜。利用XRD、霍爾效應(yīng)、XPS、PL、透射光譜等測試表征手段,分析了薄膜的晶體結(jié)構(gòu)、光電性能、缺陷態(tài)以及元素的化學(xué)態(tài)。在此基礎(chǔ)上,對H相關(guān)缺陷態(tài)影響薄膜性能的機理進行了深入分析。研究了H_2退火對不同氣氛制備的ZnO薄膜性能的影響。H_2退火前后,ZnO薄膜均為c軸擇優(yōu)取向的六方纖鋅礦結(jié)構(gòu),H_2退火可以顯著改善薄膜的結(jié)晶質(zhì)量。H_2退火未對薄膜在可見光區(qū)的透過率產(chǎn)生明顯影響,所有薄膜的平均透過率都大于85%。通氧制備的ZnO薄膜以O(shè)原子為終止面(O-face),薄膜中存在較多的吸附氧和O_i、V_zn等本征缺陷,它們都起到受主的作用,受主的補償和散射作用導(dǎo)致薄膜導(dǎo)電性不好。退火后,H將鈍化上述受主,造成吸附氧的脫附、形成復(fù)合體(如V_zn-H_n)和O_i逸出等,同時薄膜結(jié)晶質(zhì)量的提高也會造成遷移率的增大,因此薄膜的導(dǎo)電性能大為改善。未通氧制備的ZnO薄膜為以Zn原子為終止面(Zn-face),薄膜中的吸附氧和O_i等受主必然會比較少,因此薄膜具有較好的導(dǎo)電性。H_2退火處理后薄膜中會產(chǎn)生更多的受主V_zn,因此薄膜的導(dǎo)電性能變差。研究了H_2退火對不同氣氛制備的AZO薄膜性能的影響。H_2退火未對薄膜的結(jié)晶質(zhì)量和透過率產(chǎn)生明顯影響。H_2退火后,通氧制備的AZO薄膜的電阻率明顯降低,是H對受主的鈍化作用改善了薄膜的導(dǎo)電性能,這點與ZnO薄膜的結(jié)果一致。對未通氧制備的AZO薄膜,H_2退火后薄膜的電阻率基本保持不變,這點與ZnO薄膜的結(jié)果不同。原因是Al摻雜造成了薄膜極性的改變,導(dǎo)致H_2退火后薄膜中不會產(chǎn)生大量的受主V_zn,同時薄膜中的本底載流子濃度較高,H對V_zn的鈍化作用不會對薄膜的電學(xué)性能造成明顯影響。雖然H_2退火后通氧制備的AZO薄膜的導(dǎo)電性得到極大的改善,卻依然無法超越未通氧環(huán)境下制備的AZO薄膜。研究了H_2流量比對ZnO和AZO薄膜性能的影響。制備過程通氫對ZnO薄膜的結(jié)晶質(zhì)量影響不大,卻可導(dǎo)致AZO薄膜的結(jié)晶質(zhì)量變差。所有通氫制備的薄膜在可見光范圍透過率均大于85%。通氫后ZnO、AZO薄膜的電阻率都出現(xiàn)大幅降低。研究表明,制備過程通氫并沒有影響薄膜中的Al含量和Al、Zn的化學(xué)態(tài),H作為淺施主也不可能大幅改善薄膜導(dǎo)電性,仍然是H鈍化受主的作用造成薄膜導(dǎo)電性能的改善。制備過程通氫相比H_2退火而言,能更有效地降低薄膜的電阻率。原因可能是制備過程通氫更有利于H深入薄膜內(nèi)部,鈍化受主,改善薄膜電學(xué)性能。
[Abstract]:In this thesis, ZnO thin films were prepared by RF magnetron sputtering in two different ways: (1) ZnO and ZnO:Al (AZO) thin films were prepared in oxygen and unoxygenated atmosphere, respectively. The films were then annealed in Ar H2. (2) ZnO based films were prepared directly in Ar H _ 2 atmosphere. The crystal structure, photoelectric properties, defect states and chemical states of the films were analyzed by means of XRD, Hall effect and XPS,PL, transmission spectroscopy. On this basis, the mechanism of the influence of H-related defect states on the film properties was analyzed. The effect of HZ _ 2 annealing on the properties of ZnO thin films prepared in different atmospheres was studied. Before and after annealing, the ZnO films were all hexagonal wurtzite structures with c-axis preferred orientation. H2 annealing can significantly improve the crystalline quality of the films. H2 annealing has no significant effect on the transmittance of the films in the visible region, and the average transmittance of all the films is greater than 85g. O atoms are the termination surface (O-face) in the ZnO films prepared by oxygen transfer, and there are many intrinsic defects such as oxygen adsorption and the intrinsic defects such as OSCH VZ n in the films, which all play the role of acceptor. The compensation and scattering of the acceptor lead to the poor conductivity of the film. After annealing, H passivates the above-mentioned acceptor, resulting in the desorption of adsorbed oxygen, the formation of complex (such as V_zn-H_n) and the escape of O _ I, and the increase of the crystalline quality of the film, which also results in the increase of the mobility. As a result, the conductive properties of the films are greatly improved. The ZnO thin films prepared by unoxygenation have Zn atoms as the termination surface (Zn-face), so the number of acceptors such as oxygen adsorption and O _ s _ I in the films is bound to be relatively small. As a result, the thin films have good conductivity. After annealing, more acceptors will be produced in the films, so the conductive properties of the films become worse. The effect of Hal _ 2 annealing on the properties of AZO thin films prepared in different atmospheres was studied. The crystallization quality and transmittance of AZO films were not significantly affected by H _ s _ 2 annealing. The resistivity of AZO thin films prepared by H _ (2) annealing decreased obviously after annealing. The passivation of the acceptor by H improves the conductivity of the film, which is consistent with the results of the ZnO film. The resistivity of AZO thin films annealed by H _ S _ 2 remains basically the same as that of ZnO films, which is different from that of ZnO films. The reason is that Al doping changes the polarity of the films, resulting in no large number of acceptor VZN in the H2 annealed films, and the higher carrier concentration in the films. The passivation of V_zn by H has no obvious effect on the electrical properties of the films. Although the conductivity of AZO thin films prepared by H _ S _ 2 annealing has been greatly improved, it is still no better than that of AZO films prepared in non-oxygen environment. The effect of flow ratio of Hap2 on the properties of ZnO and AZO films was studied. The effect of hydrogen flux on the crystallization quality of ZnO thin films is not significant, but the crystallization quality of AZO thin films becomes worse. The transmittance of all the films prepared by hydrogen permeation is greater than 855in the visible range. The resistivity of ZnO,AZO films decreased significantly after hydrogen transfer. The results show that the hydrogen flux has no effect on the Al content and the chemical state of Al,Zn in the thin films. As a shallow donor, H can not improve the conductivity of the thin films significantly. It is still the H passivation acceptor that results in the improvement of the conductivity of the thin films. Compared with H _ S _ 2 annealing, the resistivity of the thin films can be reduced more effectively by the preparation of hydrogen. The reason may be that hydrogen permeation is more favorable for H to go deep into the film, passivate the acceptor and improve the electrical properties of the film.
【學(xué)位授予單位】：深圳大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：O614.241;TB383.2

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相關(guān)期刊論文 前1條

1 宋秋明;呂明昌;譚興;張康;楊春雷;;H/Al共摻雜對ZnO基透明導(dǎo)電薄膜光電性質(zhì)和晶體結(jié)構(gòu)的影響[J];發(fā)光學(xué)報;2014年04期

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本文編號：2369188