【摘要】：由于具備獨特的電學和光學特性,氧化鋅(Zinc oxide, ZnO)基透明導電薄膜現已廣泛應用于薄膜太陽能電池,發(fā)光二極管,平面液晶顯示和多種其他光電器件中。目前文獻中報道的ZnO的n型摻雜主要集中在金屬元素的使用上如B、Al、Mn、Ga、In等,而事實上,根據理論研究,F元素也是一種優(yōu)秀的ZnO的n型摻雜劑。本文中,我們制備了F摻ZnO薄膜(Fluorine-doped zinc oxide, FZO),據此進行了一系列研究,最終將絨面FZO薄膜應用于非晶硅太陽能電池,驗證其性能。本論文主要包括以下工作：1.在室溫下利用射頻磁控濺射技術在柔性聚碳酸酯(Polycarbonate, PC)襯底上制備得到了FZO薄膜,并研究了不同生長參數對于薄膜性能的影響。0.3 Pa時,薄膜獲得了最好的電學性能：電阻率7.66×10-2 Ωcm,載流子濃度1.31×1020cm-3, Hall遷移率0.62 cm2V-18-1。所有薄膜在300～2000nm的可見和近紅外波段的透過率高于80%。在添加了一層ZnO緩沖層后,得益于晶體沉積質量的改善,FZO/ZnO/PC結構薄膜的電阻率進一步下降到5.82×10-3 Ωcm,對應Hall遷移率從0.618 cm2V-1s-1提升到8.08 cm2 V-1s-1。2.結合傳統(tǒng)溶液法和Ar/H等離子體處理對玻璃襯底上沉積得到的FZO透明導電薄膜進行刻蝕,以得到理想的絨面結構。為了獲得理想的綜合性能,我們利用兩種方面相結合以改善薄膜表面陷光性能。當加入Ar/H等離子體處理時,薄膜晶體質量隨H2濃度增大略有改善,Ar/H2=100:10時,薄膜獲得最小電阻率為1.135×10-3Ωcm,對應載流子濃度2.854×1020 cm-3, Hall遷移率19.29cm2V-1s-1。Ar/H2=100:5時,薄膜得到最佳的表面散射度,在550 nm處的絨度值為52.14%。單純溶液法制備的薄膜和增加了Ar/H等離子體處理的最優(yōu)的薄膜被應用于p-i-n型非晶硅太陽能電池的前電極。對于電池性能的測試表明,最終電池表現出的轉化效率,后者(4.0%)比前者大大超出(1.0%)。
[Abstract]:Due to its unique electrical and optical properties, ZnO (Zinc oxide, ZnO) thin films have been widely used in thin film solar cells, light-emitting diodes, planar liquid crystal displays and many other optoelectronic devices. At present, the n-type doping of ZnO is mainly focused on the use of metal elements, such as the use of metal elements. In fact, according to theoretical research, element F is also an excellent n-type dopant for ZnO. In this paper, F-doped ZnO thin films have been prepared (Fluorine-doped zinc oxide, FZO), has carried out a series of studies on this basis). Finally, the suede FZO thin film has been applied to amorphous silicon solar cells to verify its performance. This paper mainly includes the following work: 1. FZO thin films were prepared on flexible polycarbonate (Polycarbonate, PC) substrates by RF magnetron sputtering at room temperature. The effects of different growth parameters on the properties of the films were investigated. The best electrical properties were obtained: resistivity 7.66 脳 10-2 惟 cm, carrier concentration 1.31 脳 1020cm-3, Hall mobility 0.62 cm2V-18-1. The transmittance of all the films in the visible and near infrared bands of 300~2000nm is higher than 80. With the addition of a layer of ZnO buffer layer, the resistivity of FZO/ZnO/PC structure film further decreased to 5.82 脳 10-3 惟 cm, thanks to the improvement of crystal deposition quality. The corresponding Hall mobility increased from 0.618 cm2V-1s-1 to 8.08 cm2 V-1s-1.2. The transparent conductive FZO films deposited on glass substrates were etched by conventional solution method and Ar/H plasma treatment to obtain an ideal suede structure. In order to obtain ideal comprehensive properties, we combine two aspects to improve the surface trapping performance of the films. When Ar/H plasma was added, the crystal quality of the film improved slightly with the increase of H _ 2 concentration. When Ar/H2=100:10 was added, the minimum resistivity of the film was 1.135 脳 10 ~ (-3) 惟 cm, corresponding to the carrier concentration of 2.854 脳 1020 cm-3,. When the Hall mobility is 19.29cm2V-1s-1.Ar/H2=100:5, the optimum surface scattering degree is obtained, and the velvet value at 550 nm is 52.14. The thin films prepared by the solution method and the optimal films with the addition of Ar/H plasma were applied to the antecedents of p-i-n amorphous silicon solar cells. The performance tests show that the conversion efficiency of the final battery (4.0%) is much higher than that of the former (1.0%).
【學位授予單位】：浙江大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TB383.2;TM914.4

【參考文獻】

相關期刊論文 前2條

1 張德恒;透明導電膜中光吸收邊的移動[J];半導體雜志;1998年03期

2 郭保智;劉永生;房文健;徐娟;武新芳;彭麟;;氧化鋅n型導電機理研究進展[J];硅酸鹽通報;2014年01期

，

本文編號：2360563