【摘要】：M型鋇鐵氧體(BaM)具有高的磁晶各向異性、自偏置特性以及優(yōu)異的化學(xué)穩(wěn)定性,其在毫米波磁性器件和磁記錄介質(zhì)方面具有重要應(yīng)用。尤其是下一代毫米波磁性器件如環(huán)行器、隔離器、濾波器服役時(shí),BaM鐵氧體將是未來(lái)毫米波磁性器件的重要骨干材料。然而,進(jìn)入毫米波頻段后,磁性器件的體積、重量、尺寸將會(huì)對(duì)BaM鐵氧體提出更加嚴(yán)苛的要求,因此,傳統(tǒng)的三維體材料將逐漸向厚膜及薄膜方向發(fā)展。為了滿足下一代微波器件的需求,迫切需要具有C軸垂直取向的具有高織構(gòu)度和高剩磁且具有一定厚度的BaM鐵氧體薄膜。利用磁控濺射法在Al2O3(006)基片上制備具有一定厚度且織構(gòu)度高的BaM薄膜,通過(guò)X射線衍射儀、場(chǎng)發(fā)射掃描電鏡、振動(dòng)樣品磁強(qiáng)計(jì)等測(cè)試手段對(duì)薄膜結(jié)構(gòu)及性能進(jìn)行表征,確定了具有較好織構(gòu)度的BaM薄膜的制備工藝;通過(guò)研究BaM薄膜厚度對(duì)薄膜晶體結(jié)構(gòu)及磁性能的影響,確定了單層BaM薄膜的最佳厚度;利用分層濺射法制備多層BaM薄膜,分析其晶體結(jié)構(gòu)、磁性能及應(yīng)力等性能,獲得了具有一定厚度且較好織構(gòu)度的BaM雙層薄膜。研究結(jié)果顯示:襯底溫度為500℃,濺射氣壓為1.4 Pa,退火溫度為850℃時(shí),所制備的BaM薄膜具有較好的C軸垂直取向;厚度在40 nm～90 nm范圍的Ba M薄膜在垂直膜面方向獲得了最大剩磁比和矯頑力,表現(xiàn)出較好的單軸磁晶各向異性;利用分層濺射法,先濺射100 nm BaM薄膜退火晶化處理作為種子層,在此基礎(chǔ)上再濺射100 nm BaM薄膜并退火晶化,制備厚度約為200 nm的雙層Ba M薄膜,并于直接濺射200 nm單層BaM薄膜進(jìn)行比較,結(jié)果顯示,分層濺射法有利于改善BaM薄膜的C軸垂直取向性,雙層薄膜獲得了更好的織構(gòu)度和磁性能。
[Abstract]:M-type barium ferrite (BaM) has high magnetocrystalline anisotropy, self-bias and excellent chemical stability. It has important applications in millimeter wave magnetic devices and magnetic recording media. Especially when the next generation of millimeter-wave magnetic devices such as circulators isolators and filters are in service BaM ferrite will be an important backbone of millimeter-wave magnetic devices in the future. However, after entering millimeter wave band, the volume, weight and size of magnetic devices will put forward more stringent requirements for BaM ferrite. Therefore, the traditional three-dimensional bulk materials will gradually develop towards thick films and thin films. In order to meet the needs of the next generation microwave devices, BaM ferrite thin films with high texture, high remanence and a certain thickness with C-axis vertical orientation are urgently needed. BaM thin films with certain thickness and high texture were prepared on Al2O3 (006) substrates by magnetron sputtering. The structure and properties of the films were characterized by X-ray diffractometer, field emission scanning electron microscope and vibrating sample magnetometer. The preparation process of BaM thin films with good texture was determined. The optimum thickness of monolayer BaM thin films was determined by studying the effect of the thickness of BaM films on the crystal structure and magnetic properties of the films. The multilayer BaM thin films were prepared by stratified sputtering. The crystal structure, magnetic properties and stress properties were analyzed. The BaM bilayer films with a certain thickness and good texture were obtained. The results show that when the substrate temperature is 500 鈩，

本文編號(hào)：2357851