發(fā)布時間：2018-11-22 12:21

【摘要】：透明導(dǎo)電氧化物薄膜(TCO)既有優(yōu)異的導(dǎo)電性,又在可見光范圍內(nèi)具有良好的透光性,已經(jīng)成為平板顯示器、太陽能電池和透明電子器件中不可或缺的材料。在TCO薄膜中,氟摻雜二氧化錫(FTO)薄膜制備成本相對低廉,熱穩(wěn)定性與化學(xué)穩(wěn)定性高,具有良好的光電性能。制備FTO薄膜的方法有很多,本文在普通溶膠凝膠的基礎(chǔ)上,對溶膠的制備方法和成膜工藝過程加以改進,制備了光電性能優(yōu)異的FTO薄膜。為了減少陰離子雜質(zhì)對FTO薄膜光電性能的影響,去除薄膜中的陰離子雜質(zhì),本文通過干凝膠再溶解法制備溶膠,有效地去除溶膠中Cl-離子含量,減少了Cl-離子對載流子的散射作用,提高了FTO薄膜的光電性能。為了減少玻璃基片中的陽離子雜質(zhì)對FTO薄膜光電性能的影響,先在玻璃基底上旋涂一層Si O2膜,有效地阻止了玻璃中的Na+,Ca+等雜質(zhì)離子進入FTO薄膜。此外,相對于在空氣中退火的樣品,將干燥完畢的FTO薄膜在氮氣保護氣氛中退火,薄膜的導(dǎo)電性明顯得到提高。本文討論了溶劑、氟摻雜濃度、溶膠濃度、PH值、穩(wěn)定劑、加水量對FTO溶膠質(zhì)量的影響。選用無水乙醇作溶劑,乙酸作PH值調(diào)節(jié)劑和穩(wěn)定劑,當(dāng)溶膠濃度為0.4 mol/L,氟摻雜濃度為20%,PH=3,H2O的量為5 ml時,配置的溶膠均勻、澄清、透明,溶膠成熟快,丁達爾效應(yīng)明顯,制備的薄膜表面均勻平整、透光性好、電阻率低。本文探討了成膜工藝中旋涂層數(shù)、退火溫度和退火氣氛對FTO薄膜光電性能的影響。通過掃描電鏡測試薄膜的橫切面,可以得出每層薄膜的厚度約75 nm。當(dāng)摻雜濃度為20%,膜厚為600 nm時,薄膜電阻率可達8.45×10-3?·cm,平均透射率為75%。隨著退火溫度的上升,薄膜的導(dǎo)電性和透光性逐漸提高,當(dāng)退火溫度達到500℃時,薄膜的光電性能最佳。在氮氣保護下退火1小時,制備出的薄膜比在空氣中退火得到的薄膜電導(dǎo)率提高4倍,對透射率的影響不大。
[Abstract]:Transparent conductive oxide thin film (TCO) is an indispensable material for flat panel display solar cells and transparent electronic devices due to its excellent conductivity and good transmittance in the visible range. Fluorine-doped tin dioxide (FTO) thin films are characterized by relatively low cost, high thermal and chemical stability and good optoelectronic properties in TCO films. There are many methods for preparing FTO thin films. Based on the ordinary sol-gel, the preparation method and the process of film formation are improved in this paper, and the FTO thin films with excellent optoelectronic properties are prepared. In order to reduce the influence of anionic impurities on the photoelectric properties of FTO films and remove the anionic impurities in the films, the sol was prepared by the method of xerogel resolution, and the content of Cl- ions in the sol was effectively removed. The scattering effect of Cl- ions on carriers is reduced, and the optoelectronic properties of FTO thin films are improved. In order to reduce the influence of cationic impurities in glass substrates on the optical and electrical properties of FTO thin films, a layer of Si O 2 films was first coated on the glass substrates, which effectively prevented the Na, Ca ions from entering the FTO films. In addition, compared with the samples annealed in air, the electrical conductivity of the FTO films annealed in nitrogen-shielded atmosphere is obviously improved. The effects of solvent, fluorine concentration, sol concentration, PH value, stabilizer and water content on the quality of FTO sol were discussed. Using anhydrous ethanol as solvent, acetic acid as PH value regulator and stabilizer, when the sol concentration is 0.4 mol/L, fluorine doping concentration is 20 mol/L, the amount of H 2O is 5 ml, the collocation of sol is uniform, clear, transparent, and the sol matures quickly. The Dindall effect is obvious, the surface of the film is uniform and smooth, the film has good transmittance and low resistivity. In this paper, the effects of the number of spin coatings, annealing temperature and annealing atmosphere on the photoelectric properties of FTO thin films are discussed. The thickness of each film is about 75 nm. by scanning electron microscopy. When the doping concentration is 20 and the film thickness is 600 nm, the average transmittance of the film reaches 8.45 脳 10 ~ (-3)? cm,. With the increase of annealing temperature, the electrical conductivity and transmittance of the films increase gradually. When the annealing temperature reaches 500 鈩，

本文編號：2349363