【摘要】：類金剛石薄膜(DLC)是一種以sp3雜化鍵和sp2雜化鍵的形式結合生成的亞穩(wěn)態(tài)材料,兼具了金剛石和石墨的優(yōu)良特性,具有高硬度、高彈性模量,低摩擦因數、耐磨損以及良好的真空摩擦的特性。DLC薄膜在紅外區(qū)有很高的透過率,應用于光學透鏡的保護膜、軍用車輛和飛行器的紅外窗口保護膜。光學薄膜制造及實際應用方面DLC薄膜突破了大面積、高均勻性、高透射比、抗激光兼容的紅外減反射膜制備等關鍵技術。但DLC薄膜激光損傷閾值(LIDT)卻非常低,該特性嚴重制約了薄膜在紅外激光系統中的應用。本論文針對DLC薄膜的特性并根據傳統的薄膜抗激光損傷方法,提出了一種新的通過外加偏置電場提高DLC薄膜損傷閾值的方法。設計出抗激光損傷閾值的總體方案,搭建外加偏置電場的薄膜損傷測試裝置。采用1-on-1零幾率損傷法,對比無外加電場和有外加電場的薄膜損傷閾值,再對外加電場不斷增加薄膜損傷閾值的改變。最終對測試結果進行總結分析。實驗結果顯示：在相同激光能量下,DLC薄膜在加外加偏置電場后,損傷形貌有明顯的改善,對比無外加電壓和外加100v電壓薄膜的LIDT從0.57J/cm2提高0.64J/cm2。在電場不斷增加情況下薄膜的損失閾值也不斷增加,但當增加到一定程度損傷閾值會趨于平穩(wěn)電場再增加損傷閾值也不會改變。外加電壓增加到700v薄膜的LIDT增加到1.33J/cm2電壓增到999v薄膜的LIDT不再發(fā)生變化。根據物理特性進行了機理分析,在電場作用下激光在薄膜中產生的光生電子發(fā)生了快速漂移,有效的減少了激光輻照區(qū)域產生的熱能量,減緩了薄膜的石墨化。
[Abstract]:Diamond-like carbon (DLC) film is a kind of metastable material formed by combining sp3 hybrid bond with sp2 hybrid bond. It has excellent properties of both diamond and graphite, and has high hardness, high elastic modulus and low friction coefficient. The DLC film has high transmittance in infrared region and is used in the protective film of optical lens and the infrared window protection film of military vehicles and aircraft. The fabrication and practical application of optical thin films have broken through the key technologies such as large area, high uniformity, high transmittance and anti-laser compatible infrared antireflection films. However, the laser damage threshold (LIDT) of DLC thin film is very low, which seriously restricts the application of the thin film in infrared laser system. In this paper, according to the characteristics of DLC thin films and the traditional laser damage resistance method, a new method to increase the damage threshold of DLC thin films by applying bias electric field is proposed. The overall scheme of laser damage threshold was designed, and the thin film damage test device with bias electric field was built. The 1-on-1 zero-probability damage method is used to compare the damage threshold between the film with and without an applied electric field, and then the damage threshold of the film is increased with the increase of the applied electric field. Finally, the test results are summarized and analyzed. The experimental results show that under the same laser energy, the damage morphology of DLC thin films is obviously improved after the application of bias electric field. Compared with the LIDT without applied voltage and 100v voltage, the LIDT of DLC thin films increases by 0.64J / cm ~ 2 from 0.57J/cm2. When the electric field is increasing, the loss threshold also increases, but when the damage threshold is increased to a certain extent, the damage threshold will tend to steady electric field and then increase the damage threshold will not change. When the applied voltage is increased to 700V, the LIDT increases to the 1.33J/cm2 voltage. The LIDT of 999v thin film does not change. According to the mechanism analysis of the physical properties, the photoelectron produced by laser in the film has a fast drift under the action of electric field, which can effectively reduce the thermal energy generated in the laser irradiation region and slow down the graphitization of the film.
【學位授予單位】：西安工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TB383.2

【參考文獻】

相關期刊論文 前3條

1 樓祺洪,黃峰;Laser induced fractal structure on magnetic dielectric thin film[J];Chinese Optics Letters;2003年04期

2 杭凌俠;郭曉川;;UBMS和PVAD法制備DLC薄膜表面微觀形貌分析[J];西安工業(yè)大學學報;2010年01期

3 徐均琪;蘇俊宏;謝松林;梁海鋒;;不同技術制備DLC膜的激光損傷特性研究[J];真空科學與技術學報;2007年03期

，

本文編號：2323870