【摘要】：氧化亞銅(Cu20)在太陽能電池和太陽能分解水應(yīng)用上具有良好的前景。在這些應(yīng)用中,Cu20的半導(dǎo)體導(dǎo)電性調(diào)控具有重要的意義。本工作采用電化學(xué)沉積法在酸性醋酸銅溶液中制備了Cu20薄膜,并分別通過陰離子表面活性劑濃度和沉積電勢來調(diào)控Cu20薄膜的半導(dǎo)體導(dǎo)電性,同時還對Cu20薄膜在水溶液中的光電化學(xué)性能進行了研究。研究發(fā)現(xiàn)：(1)在pH 4.93的醋酸銅溶液中恒定沉積電勢-0.10V(vs.Ag/AgCl/飽和KCl)時,表面活性劑十二烷基硫酸鈉(SDS)的濃度可以控制Cu20薄膜的n型導(dǎo)電和p型導(dǎo)電。當(dāng)SDS的濃度≤0.85mM時, Cu2O薄膜表現(xiàn)出n型半導(dǎo)體行為；當(dāng)SDS的濃度≥1.70mM時,Cu2O薄膜則會表現(xiàn)出p型半導(dǎo)體行為,且p型Cu20薄膜中的受主密度隨著SDS濃度增大而增大。SDS濃度為2.50 mM時制備的p型Cu20薄膜在3wt%NaCl溶液中具有較好的光電化學(xué)穩(wěn)定性。(2)在SDS濃度為3.30 mM的醋酸銅溶液(pH4.93)中,沉積電勢可以控制Cu20薄膜的n型導(dǎo)電和p型導(dǎo)電。當(dāng)沉積電勢比-0.05 V (vs.Ag/AgCl/飽和KCl)正時,Cu20薄膜表現(xiàn)出n型半導(dǎo)體行為；當(dāng)沉積電勢比-0.10V(vs.Ag/AgCl/飽和KCl)負時,Cu20薄膜表現(xiàn)出p型半導(dǎo)體行為,且p型Cu2O薄膜的受主密度隨著沉積電勢負移而增大；同時p型Cu20薄膜中出現(xiàn)金屬Cu,切Cu的含量隨著沉積電勢負移而增多。
[Abstract]:Cuprous oxide (Cu20) has a good prospect in solar cells and solar energy decomposing water applications. In these applications, the semiconductor conductivity regulation of Cu20 is of great significance. In this work, Cu20 thin films were prepared by electrochemical deposition in acidic copper acetate solution. The semiconductor conductivity of Cu20 thin films was regulated by the concentration of anionic surfactants and deposition potential, respectively. The photoelectrochemical properties of Cu20 thin films in aqueous solution were also studied. The results are as follows: (1) at a constant deposition potential of -0.10V (vs.Ag/AgCl/ saturated KCl) in copper acetate solution of pH 4.93, The concentration of surfactant sodium dodecyl sulfate (SDS) can control the n-type and p-type conductance of Cu20 films. When the concentration of SDS is 鈮，

本文編號：2307545