【摘要】：納米鐵磁金屬薄膜,近年來不再限于宏觀的、靜態(tài)的物質磁性,而是隨著研究的不斷深入,研究方向逐漸拓展到運動的、單電子的自旋變化。于是實驗上自旋霍爾效應、反常霍爾效應、隧道磁阻(Tunneling Magnetoresistance,TMR)和龐磁阻效應(Colossal magnetoresistance,CMR)、自旋量子霍爾效應等一系列新的現象應運而生,并由此拓展產生一個結合磁學與微電子學的研究領域:自旋電子學。反常霍爾效應(anomalous Hall effect,AHE)是自旋電子學研究課題中的熱點之一。因為霍爾于1889年就已經發(fā)現了反�；魻栃�,但是關于其機理有兩種說法,一是來自于非本征機制,另一種是本征機制。至今兩種機制的爭論還在繼續(xù)。因此對其進行研究顯得尤為重要。本文以Fe-N系化合物薄膜、CoCrPt薄膜為研究對象,對其微結構、磁性、輸運特性特別是反�；魻栃M行了系統(tǒng)研究。主要工作和研究成果如下:(1)在室溫下采用射頻磁控濺射方法制備氮化鐵薄膜,研究了不同氮含量條件下薄膜的導電機制。實驗結果表明:隨著氮含量的增加,觀察到薄膜的導電機制從金屬過渡到半導體。(2)霍爾電阻的測量表明所有氮化鐵薄膜樣品在高電阻區(qū)域反�；魻栯娮杪逝c縱向電阻率的標度關系為線性,即反�；魻栃裱鄙⑸錂C制,但相應的反常霍爾電導率與縱向電導率的關系不總是呈線性。(3)采用磁控濺射方法制備CoCrPt薄膜并系統(tǒng)研究了襯底層Cu層厚度對薄膜結構、磁性、反常霍爾效應的影響,結果表明所有樣品具有良好的垂直磁性(PMA)。隨著Cu層厚度的增加,矯頑力cH變小,顆粒之間的相互作用變強。矯頑力cH的變化是由顆粒之間的交互作用引起的。薄膜樣品的標度指數從n=1.46變到n=1,這表明反�；魻栃獧C制由斜散射和邊跳機制的共同作用轉變?yōu)閱渭兊男鄙⑸?同時也表明Cu層厚度較薄的樣品無序度較高。此趨勢與樣品中的弱局域化效應一致。
[Abstract]:In recent years, the ferromagnetic nanometallic thin films are no longer confined to the macroscopic and static magnetic properties, but with the development of the research, the research direction is gradually extended to the spin variation of the moving, single electron. A series of new phenomena, such as spin Hall effect, anomalous Hall effect, tunneling magnetoresistive effect (Tunneling Magnetoresistance,TMR), colossal magnetoresistive effect (Colossal magnetoresistance,CMR) and spin quantum Hall effect come into being. A new research field combining magnetics and microelectronics has been developed: spin electronics. Anomalous Hall effect (anomalous Hall effect,AHE) is one of the hot topics in spin electronics. Hall discovered the anomalous Hall effect in 1889, but there are two theories about its mechanism, one is from the extrinsic mechanism, the other is the intrinsic mechanism. The debate over the two mechanisms continues to this day. Therefore, it is particularly important to study it. In this paper, the microstructures, magnetic properties, transport properties, especially anomalous Hall effect of Fe-N compound thin films are studied. The main results are as follows: (1) the electroconductive mechanism of Fe _ 3N _ 4 thin films prepared by RF magnetron sputtering at room temperature was studied. The results show that: with the increase of nitrogen content, It has been observed that the conductive mechanism of the film is transitioning from metal to semiconductor. (2) the measurement of Hall resistance shows that the scale relationship between anomalous Hall resistivity and longitudinal resistivity of all samples of iron nitride films in high resistance region is linear. The anomalous Hall effect follows the oblique scattering mechanism, but the relationship between the anomalous Hall conductivity and the longitudinal conductivity is not always linear. (3) CoCrPt thin films are prepared by magnetron sputtering and the effects of the thickness of the Cu layer on the structure and magnetic properties of the films are systematically studied. The effect of anomalous Hall effect shows that all samples have good perpendicular magnetic (PMA). With the increase of the thickness of Cu layer, the coercivity cH becomes smaller and the interaction between particles becomes stronger. The change of coercivity cH is caused by the interaction between particles. The scale exponent of the thin film samples changed from nb1.46 to nb-1, which indicates that the anomalous Hall effect mechanism changed from oblique scattering and edge-hop mechanism to simple oblique scattering. It also shows that the disordered degree of the thin Cu layer is higher than that of the sample with thin thickness. This trend is consistent with the weak localization effect in the sample.
【學位授予單位】：南京郵電大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TM27;TB383.2

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