發(fā)布時(shí)間：2018-09-07 20:03

【摘要】：本文以兩種方式在透明玻璃襯底上磁控濺射制備AZO薄膜,分別是Zn、Al金屬靶直流濺射和氧化鋅鋁(97:3 wt%)陶瓷靶射頻濺射,通過對(duì)薄膜進(jìn)行退火處理以改善薄膜結(jié)構(gòu)。分別采用X-ray Diffraction(XRD)、四探針、紫外分光光度計(jì)和掃描電子顯微鏡(SEM)測(cè)試薄膜的表面微觀結(jié)構(gòu)、結(jié)晶質(zhì)量、電學(xué)性能和光學(xué)性能。主要的研究參數(shù)是氧氬比、Al含量、Ar氣壓強(qiáng)、退火時(shí)間和溫度,研究分析參數(shù)變化對(duì)薄膜結(jié)構(gòu)及性能的影響。實(shí)驗(yàn)結(jié)果表明:金屬雙靶直流濺射制備AZO薄膜,O_2/Ar=0.35時(shí),薄膜的綜合性能較好,透光度達(dá)到92%,電阻率是5.6×10~(-3)?.cm。其中氧氣含量對(duì)薄膜的光電性能影響很大,在試驗(yàn)中隨著氧氬比的增大(0.25-0.8范圍內(nèi)),薄膜的透光度由85%上升到92%,電阻率從5.6×10~(-3)?.cm增加到1.4×10-2?.cm。Al摻雜實(shí)驗(yàn)表明,Al摻雜量對(duì)AZO薄膜的光學(xué)性能影響不大,所有樣品的透射率均在85%以上,但Al摻雜量對(duì)薄膜的結(jié)晶質(zhì)量和導(dǎo)電性能有顯著的影響。當(dāng)Al摻雜量Wt(Al)=1.2%時(shí),AZO薄膜晶粒尺寸最大,結(jié)晶性能較好。當(dāng)Al摻雜量Wt(Al)=1.4%時(shí),電阻率最低,達(dá)到4.2×10~(-3)?.cm。退火處理對(duì)薄膜的導(dǎo)電性能有改善作用。合適的退火處理能使薄膜產(chǎn)生再結(jié)晶而導(dǎo)致晶粒細(xì)化,薄膜結(jié)晶情況得到改善,從而使薄膜光電性能均得到提高。在實(shí)驗(yàn)溫度范圍內(nèi),退火溫度越高,薄膜的光電性能越好,退火時(shí)間長短也對(duì)薄膜性能有較大影響。本實(shí)驗(yàn)中,金屬靶濺射制備的AZO薄膜在退火溫度為450℃、時(shí)間1-2h時(shí),光電性能較佳,透射率和電阻率分別為:92%和33.6 10.cm-′?。陶瓷靶射頻濺射制備AZO薄膜,濺射過程通氧有利于氧粒子充分與鋅結(jié)合,提高AZO薄膜的光學(xué)性能。本實(shí)驗(yàn)條件下,陶瓷靶通氧濺射制備的薄膜,其透射率均比較高,達(dá)到93%;在不通氧的情況下,透射率也達(dá)到90%,薄膜電阻率最低,達(dá)到33.2 10.cm-W′,綜合性能最佳。氬氣壓強(qiáng)是影響AZO薄膜電學(xué)性能的重要因素,在不通氧的情況下,隨著氬氣壓強(qiáng)的升高,從0.1Pa加壓到1.5Pa,(002)衍射峰強(qiáng)度越來越小,電阻率逐漸增大,而對(duì)透光度無明顯的影響。退火處理對(duì)陶瓷靶制備的AZO薄膜也有較大的影響,和退火處理對(duì)金屬靶濺射制備AZO薄膜的作用相似,本實(shí)驗(yàn)中,當(dāng)退火溫度在420℃、時(shí)間1h,光電性能較佳。
[Abstract]:In this paper, AZO thin films were prepared by magnetron sputtering on transparent glass substrates, namely Zn,Al metal target DC sputtering and zinc aluminum oxide (97:3 wt%) ceramic target RF sputtering. The films were annealed to improve the structure of the films. The surface microstructure, crystallization quality, electrical properties and optical properties of the films were measured by X-ray Diffraction (XRD), four-probe, UV spectrophotometer and scanning electron microscope (SEM) (SEM), respectively. The main parameters are ar pressure, annealing time and temperature. The influence of the parameters on the structure and properties of the films is studied. The experimental results show that when AZO thin films are prepared by metal double target DC sputtering, the comprehensive properties of the films are better, the transmittance is up to 92and the resistivity is 5.6 脳 10 ~ (-3) 路cm ~ (-1). The oxygen content has a great influence on the photoelectric properties of the film. With the increase of oxygen / argon ratio (0.25-0.8), the transmittance of the films increases from 85% to 922%, and the resistivity increases from 5.6 脳 10 ~ (-3) to 1.4 脳 10-2?.cm.Al doping. The results show that the doped amount of Al has little effect on the optical properties of AZO films, and the transmittance of all samples is more than 85%. However, the amount of Al doping has a significant effect on the crystalline quality and conductivity of the films. When the doping amount of Al is Wt (Al) = 1.2, the crystal size of AZO film is the largest and the crystalline property is better. When the doping amount of Al is Wt (Al) = 1.4, the resistivity is the lowest, reaching 4.2 脳 10 ~ (-3) ~ (-3) 路cm ~ (-1). Annealing treatment can improve the conductivity of the film. Proper annealing treatment can result in recrystallization of the films, resulting in grain refinement, and the improvement of the crystallization of the films, thus improving the photoelectric properties of the films. In the range of experimental temperature, the higher the annealing temperature is, the better the photoelectric properties of the films are, and the length of annealing time has a great influence on the properties of the films. In this experiment, the AZO thin films prepared by metal target sputtering have better photoelectric properties at annealing temperature of 450 鈩，

本文編號(hào)：2229279