基于CZTS薄膜太陽能電池板的制備及性能研究
發(fā)布時間：2018-09-04 18:09
【摘要】：CZTS(Cu_2ZnSnS_4)是由銅鋅錫硫四種元素組成的一種四元化合物的半導體材料,由于其具有良好的光吸收能力,因此作為太陽能電池的吸收層材料有著良好的應用前景。本文制備了CZTS薄膜和CdS(硫化鎘)薄膜,并且研究了它們的光電化學性能。本文致力于CZTS薄膜太陽能電池板的核心部位CdS/CZTS異質結的制備方法的探索并且研究了光電化學性能,開展了以下研究工作:(1)CZTS納米粉末的制備。分別以氯化銅(CuCl_2)、氯化鋅(ZnCl_2)、四氯化錫(SnCl_4)和硫脲(CH_4N_2S)為原料,以去離子水為溶劑在一定溫度下攪拌后得到談黃色的澄清溶液,通過水熱法制備了CZTS粉末,最后將粉末烘干后通過馬弗爐進行退火處理。用水熱法在不同反應溫度下制備的CZTS粉末,采用XRD、SEM、UV-Vis等設備對其進行表征測試,研究了不同溫度下制備的CZTS粉末的結晶度、光吸收率等性能。(2)CZTS薄膜太陽能電池中的吸收層(CZTS薄膜)制備。將制備好的CZTS粉末加以研磨后制成CZTS漿料,然后運用絲網印刷技術制備CZTS薄膜,進行一系列退火處理后得到良好的CZTS薄膜。采用SEM、UV-Vis、電化學工作站等設備對其進行表征測試,研究發(fā)現研磨的漿料的程度、CZTS薄膜的退火溫度都對其光吸收率和光電導率有著重要影響。(3)CZTS薄膜太陽能電池的緩沖層(硫化鎘薄膜)的制備。采用氯化鎘(CdCl_2)、氯化銨(NH_4Cl)和硫脲(CH_4N_2S)為原料,通過水浴法探討在不同溫度、pH值的條件下制備了硫化鎘薄膜,后續(xù)通過馬弗爐進行了不同溫度的退火處理。采用XRD、SEM、UV-Vis、電化學工作站等設備對硫化鎘薄膜進行表征,研究表明,在反應溶液溫度為70 oC左右、溶液pH值為10時,制備出的薄膜樣品進過退火后得到結晶度好、透光性好和光電導好的硫化鎘薄膜。(4)本文在最后還制備出了CZTS與硫化鎘的P-N結。先在刻蝕好的FTO玻璃上沉積一層均勻的硫化鎘薄膜,再在硫化鎘薄膜襯底上通過絲網印刷工藝制備一層CZTS薄膜,最后印上碳電極后放到馬弗爐中進行一系列退火處理。用500 W的氙燈光源透過AM1.5濾光片后模擬太陽光來照射P-N結,再通過電化學工作站對P-N結進行測試表征后得到電池的一些性能參數。
[Abstract]:CZTS (Cu_2ZnSnS_4) is a quaternary compound semiconductor material composed of four elements of copper, zinc, tin and sulfur. Because of its good light absorption ability, CZTS (Cu_2ZnSnS_4) has a good application prospect as the absorbent layer of solar cells. In this paper, CZTS and CdS thin films have been prepared and their photochemical properties have been studied. In this paper, the preparation methods of CdS/CZTS heterojunction at the core of CZTS thin film solar panels are explored and the photochemical properties are studied. The following research works have been carried out: (1) preparation of CZTS nanocrystalline powders. Using copper chloride (CuCl_2), zinc chloride (ZnCl_2), tin tetrachloride (SnCl_4) and thiourea (CH_4N_2S) as raw materials and using deionized water as solvent, yellow clarification solution was prepared by hydrothermal method. Finally, the powder was dried and annealed in a muffle furnace. The CZTS powder prepared by hydrothermal method at different reaction temperature was characterized by XRD,SEM,UV-Vis and the crystallinity of CZTS powder prepared at different temperature was studied. (2) absorption layer (CZTS) in CZTS thin film solar cells. The prepared CZTS powder was ground to make CZTS paste, and then the CZTS film was prepared by screen printing technology. After a series of annealing, a good CZTS film was obtained. It was characterized by SEM,UV-Vis, electrochemical workstation. It is found that the degree of grinding slurry and annealing temperature of CZTS films have an important effect on their photoabsorption and photoconductivity. (3) preparation of buffer layer (cadmium sulfide film) for CZTS thin film solar cells. Cadmium sulfide films were prepared by water bath method using cadmium chloride (CdCl_2), ammonium chloride (NH_4Cl) and thiourea (CH_4N_2S) as raw materials. The CD _ 2S thin films were characterized by XRD,SEM,UV-Vis, electrochemical workstation. The results showed that the prepared films had good crystallinity after annealing when the reaction solution temperature was about 70 oC and the solution pH value was 10:00. (4) finally, the P-N junction between CZTS and CD _ 2S was prepared. A uniform layer of cadmium sulphide thin film was deposited on the etched FTO glass, then a layer of CZTS thin film was prepared by screen printing on the substrate of the film. Finally, the carbon electrode was printed and then placed in a muffle furnace for a series of annealing. The P-N junction was illuminated by 500W xenon lamp light source through AM1.5 filter. The P-N junction was characterized by electrochemical workstation, and some performance parameters of the battery were obtained.
【學位授予單位】：湖南工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2016
【分類號】：TB383.2;TM914.4
本文編號：2222945
[Abstract]:CZTS (Cu_2ZnSnS_4) is a quaternary compound semiconductor material composed of four elements of copper, zinc, tin and sulfur. Because of its good light absorption ability, CZTS (Cu_2ZnSnS_4) has a good application prospect as the absorbent layer of solar cells. In this paper, CZTS and CdS thin films have been prepared and their photochemical properties have been studied. In this paper, the preparation methods of CdS/CZTS heterojunction at the core of CZTS thin film solar panels are explored and the photochemical properties are studied. The following research works have been carried out: (1) preparation of CZTS nanocrystalline powders. Using copper chloride (CuCl_2), zinc chloride (ZnCl_2), tin tetrachloride (SnCl_4) and thiourea (CH_4N_2S) as raw materials and using deionized water as solvent, yellow clarification solution was prepared by hydrothermal method. Finally, the powder was dried and annealed in a muffle furnace. The CZTS powder prepared by hydrothermal method at different reaction temperature was characterized by XRD,SEM,UV-Vis and the crystallinity of CZTS powder prepared at different temperature was studied. (2) absorption layer (CZTS) in CZTS thin film solar cells. The prepared CZTS powder was ground to make CZTS paste, and then the CZTS film was prepared by screen printing technology. After a series of annealing, a good CZTS film was obtained. It was characterized by SEM,UV-Vis, electrochemical workstation. It is found that the degree of grinding slurry and annealing temperature of CZTS films have an important effect on their photoabsorption and photoconductivity. (3) preparation of buffer layer (cadmium sulfide film) for CZTS thin film solar cells. Cadmium sulfide films were prepared by water bath method using cadmium chloride (CdCl_2), ammonium chloride (NH_4Cl) and thiourea (CH_4N_2S) as raw materials. The CD _ 2S thin films were characterized by XRD,SEM,UV-Vis, electrochemical workstation. The results showed that the prepared films had good crystallinity after annealing when the reaction solution temperature was about 70 oC and the solution pH value was 10:00. (4) finally, the P-N junction between CZTS and CD _ 2S was prepared. A uniform layer of cadmium sulphide thin film was deposited on the etched FTO glass, then a layer of CZTS thin film was prepared by screen printing on the substrate of the film. Finally, the carbon electrode was printed and then placed in a muffle furnace for a series of annealing. The P-N junction was illuminated by 500W xenon lamp light source through AM1.5 filter. The P-N junction was characterized by electrochemical workstation, and some performance parameters of the battery were obtained.
【學位授予單位】：湖南工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2016
【分類號】：TB383.2;TM914.4
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