【摘要】：探索埋嵌型納米顆粒在應(yīng)變作用下的微觀結(jié)構(gòu)和物理性質(zhì)變化規(guī)律,揭示尺寸、形貌和微觀晶格結(jié)構(gòu)之間的內(nèi)在聯(lián)系是具有重要科學(xué)意義和應(yīng)用前景的課題。這一課題的研究將有助于人們深入理解形貌和尺寸對(duì)納米顆粒物理化學(xué)性質(zhì)的影響,拓展人們對(duì)納米顆粒材料和應(yīng)變物理的認(rèn)識(shí)。具體內(nèi)容如下:(1)在器件應(yīng)用中,理解納米顆粒的應(yīng)變和微觀結(jié)構(gòu)之間的物理關(guān)系十分重要。在本文中,使用脈沖激光結(jié)合快速退火技術(shù)將GaAs納米顆粒埋嵌在Al2O3基體中。揭示了埋嵌型的GaAs納米顆粒在生長(zhǎng)過程中受到了壓縮應(yīng)變。通過應(yīng)變調(diào)控帶隙,可以提高和裁剪埋嵌型GaAs納米顆粒的光學(xué)性能,因此可以使PL光譜具有不同的波長(zhǎng)。在本文中提出的發(fā)現(xiàn)可以用于調(diào)控GaAs納米顆粒的性能以使其在光電子和光子器件中獲得潛在的應(yīng)用。(2)眾所周知,面心立方(fcc)結(jié)構(gòu)的Fe在室溫環(huán)境下是熱力學(xué)不穩(wěn)定的。在本文中,我們理論和實(shí)驗(yàn)表明在生長(zhǎng)過程中,在室溫下通過外部應(yīng)變可以誘導(dǎo)出熱力學(xué)穩(wěn)定的fcc結(jié)構(gòu)的Fe納米顆粒。使用脈沖激光結(jié)合快速退火技術(shù)在非磁性Al2O3基體中制備出埋嵌型的Fe納米顆粒。在生長(zhǎng)過程中,Fe納米顆粒受到Al2O3基體的偏應(yīng)變,而偏應(yīng)變可以改變Fe納米顆粒的微觀結(jié)構(gòu)并導(dǎo)致在室溫下形成熱力學(xué)穩(wěn)定的fcc結(jié)構(gòu)的Fe納米顆粒(空間群為Fm-3m)。第一性原理計(jì)算也清楚的表明,fcc結(jié)構(gòu)的應(yīng)變Fe納米顆粒在熱力學(xué)上是穩(wěn)定的。在磁性測(cè)量中,可以觀察到Fe納米顆粒典型的弱相互作用,其特征為超順磁性和9K的轉(zhuǎn)變溫度。(3)使用脈沖激光結(jié)合快速退火技術(shù)在Al2O3基體中制備出埋嵌型的Au納米顆粒。在生長(zhǎng)過程中,埋嵌型的Au納米顆粒受到基體的壓縮應(yīng)變。它證實(shí)了通過調(diào)控埋嵌型Au納米顆粒的應(yīng)變和缺陷態(tài),利用氫氣鈍化處理可以提高和裁剪埋嵌型的Au納米顆粒的光學(xué)性能。研究結(jié)果提供了一個(gè)有效的方法來提高以貴金屬納米顆粒為基礎(chǔ)材料的發(fā)射效率,從而使其在光電子和光子器件中獲得潛在應(yīng)用。
[Abstract]:It is of great scientific significance and application prospect to explore the changes of microstructure and physical properties of embedded nanocrystalline particles under strain, and to reveal the internal relations between size, morphology and microstructure of nanocrystalline particles. The study of this subject will help people to understand the influence of morphology and size on the physical and chemical properties of nanoparticles and expand the understanding of nanocrystalline materials and strain physics. The main contents are as follows: (1) in the application of the device, it is very important to understand the physical relationship between the strain and the microstructure of the nanocrystalline particles. In this paper, the GaAs nanoparticles are embedded in the Al2O3 matrix by pulsed laser and rapid annealing. It was revealed that the embedded GaAs nanoparticles were subjected to compression strain during the growth process. The optical properties of embedded GaAs nanoparticles can be improved and clipped by strain-regulating band gap, so that the PL spectra have different wavelengths. The findings in this paper can be used to regulate the properties of GaAs nanoparticles for potential applications in optoelectronic and photonic devices. (2) it is well known that Fe with face-centered cubic (fcc) structure is thermodynamically unstable at room temperature. In this paper, our theoretical and experimental results show that thermodynamically stable Fe nanoparticles with fcc structure can be induced by external strain at room temperature during the growth process. Embedded Fe nanoparticles were prepared by pulsed laser and rapid annealing in nonmagnetic Al2O3 matrix. During the growth process, Fe nanoparticles were subjected to the bias strain of Al2O3 matrix, which could change the microstructure of Fe nanoparticles and lead to the formation of thermodynamically stable Fe nanoparticles with fcc structure (space group Fm-3m) at room temperature. First-principle calculations also show that the strain Fe nanoparticles with FCC structure are thermodynamically stable. In magnetic measurement, typical weak interactions of Fe nanoparticles are observed, which are characterized by superparamagnetism and 9K transition temperature. (3) embedded Au nanoparticles are prepared in Al2O3 matrix by pulsed laser and rapid annealing technique. During the growth process, the embedded Au nanoparticles were subjected to the compression strain of the matrix. It is proved that the optical properties of buried Au nanoparticles can be improved and clipped by hydrogen passivation by regulating the strain and defect state of embedded Au nanoparticles. The results provide an effective method to improve the emission efficiency of noble metal nanoparticles, thus making it a potential application in photoelectron and photonic devices.
【學(xué)位授予單位】：江西師范大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TB383.1

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