【摘要】：為了利用磁控濺射技術(shù)制備多組元薄膜材料,并有效地調(diào)控薄膜組份,采用低頻與高頻組合、射頻與甚高頻組合驅(qū)動(dòng)的雙頻雙靶磁控濺射技術(shù)成為可能的途徑之一。但是,目前雙靶磁控濺射主要采用直流和射頻驅(qū)動(dòng)的雙靶、脈沖直流和射頻驅(qū)動(dòng)的雙靶或兩個(gè)相同射頻驅(qū)動(dòng)的雙靶共濺射技術(shù),缺乏更高頻率組合的雙頻磁控濺射技術(shù)。為了發(fā)展低頻與高頻組合、射頻與甚高頻組合驅(qū)動(dòng)的雙頻磁控濺射,本文采用2MHz、13.56 MHz、27.12 MHz和60 MHz功率源相互組合形成雙頻磁控濺射系統(tǒng),通過(guò)拒斥場(chǎng)能量分析技術(shù)和Langmuir探針技術(shù),研究了雙頻磁控濺射和ICP增強(qiáng)的雙頻磁控濺射等離子體特性。本文研究了2MHz/13.56(27.12、60)MHz、13.56MHz/27.12(60)MHz和27.12MHz/60MHz雙頻磁控濺射放電等離子體的離子能量分布特性。發(fā)現(xiàn)離子能量分布特性取決于低頻與高頻的功率比和驅(qū)動(dòng)頻率。對(duì)于2MHz/13.56(27.12、60)MHz的雙頻磁控濺射,增大低頻/高頻功率比可以導(dǎo)致離子能量分布從單模結(jié)構(gòu)朝著雙模結(jié)構(gòu)變化。對(duì)于13.56MHz/27.12(60)MHz和27.12MHz/60MHz的雙頻磁控濺射,增大低頻/高頻功率比則導(dǎo)致峰值能量的增大,利用低頻與高頻的功率比對(duì)鞘層振蕩的影響機(jī)制解釋了雙頻磁控濺射離子能量分布特性變化的可能原因。論文研究了13.56MHz/27.12(60)MHz和27.12MHz/60MHz雙頻磁控濺射放電等離子體的等離子體密度、電子溫度、等離子體電位和電子能量分布特性。發(fā)現(xiàn)不同頻率組合可以造成這些性能的差異,因此,通過(guò)選擇適當(dāng)?shù)念l率組合,可以調(diào)控雙頻磁控濺射的等離子體性能。論文進(jìn)一步研究了ICP增強(qiáng)的13.56MHz/27.12(60)MHz和27.12MHz/60MHz雙頻磁控濺射放電等離子體特性。發(fā)現(xiàn)ICP放電的增強(qiáng)作用與濺射頻率的組合有關(guān),需要選擇合適的頻率組合來(lái)改善等離子體性能。因此,發(fā)展低頻與高頻組合、射頻與甚高頻組合驅(qū)動(dòng)的雙頻磁控濺射技術(shù)對(duì)于薄膜沉積與結(jié)構(gòu)性能的調(diào)控提供了一種新的手段。
[Abstract]:In order to fabricate multicomponent thin films by magnetron sputtering and effectively control the composition of films, dual-frequency dual-target magnetron sputtering technology driven by combination of low frequency and high frequency, radio frequency and very high frequency is one of the possible ways. However, at present, dual-target magnetron sputtering mainly uses DC and RF driven dual-target, pulse DC and RF driven dual-target co-sputtering technology, and lack of high-frequency combination dual-frequency magnetron sputtering technology. In order to develop a dual-frequency magnetron sputtering system driven by a combination of low frequency and high frequency and a combination of radio frequency and very high frequency, a dual-frequency magnetron sputtering system was developed by combining the power sources of 2MHz 13.56MHz 27.12 MHz and 60 MHz. The rejection field energy analysis technique and the Langmuir probe technique were used. The plasma characteristics of dual frequency magnetron sputtering and ICP enhanced double frequency magnetron sputtering are studied. The ion energy distribution characteristics of 2MHz/13.56 (27.12 ~ 60) MHz / 13.56 MHz / 27.12 (60) MHz and 27.12MHz/60MHz dual-frequency magnetron sputtering discharge plasma have been studied. It is found that the distribution of ion energy depends on the power ratio and driving frequency of low frequency and high frequency. For the dual-frequency magnetron sputtering of 2MHz/13.56 (27.12 ~ (60) MHz), increasing the low frequency / high frequency power ratio can lead to the change of ion energy distribution from single mode structure to double mode structure. For the dual-frequency magnetron sputtering of 13.56MHz/27.12 _ (60) MHz and 27.12MHz/60MHz, the increase of low frequency / high frequency power ratio leads to the increase of peak energy. The influence of low frequency and high frequency power ratio on sheath oscillation is used to explain the variation of ion energy distribution in dual frequency magnetron sputtering. The plasma density, electron temperature, plasma potential and electron energy distribution of 13.56MHz/27.12 _ (60) MHz and 27.12MHz/60MHz dual-frequency magnetron sputtering discharge plasma are studied in this paper. It is found that different frequency combinations can cause these differences. Therefore, the plasma performance of dual-frequency magnetron sputtering can be controlled by choosing the appropriate frequency combination. The plasma characteristics of ICP enhanced 13.56MHz/27.12 (60) MHz and 27.12MHz/60MHz double frequency magnetron sputtering discharge are further investigated. It is found that the enhancement of ICP discharge is related to the sputtering frequency combination, and it is necessary to select a suitable frequency combination to improve the plasma performance. Therefore, the development of dual-frequency magnetron sputtering technology driven by combination of low frequency and high frequency, radio frequency and very high frequency provides a new means for controlling the deposition and structure properties of thin films.
【學(xué)位授予單位】：蘇州大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TB383.2

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