發(fā)布時(shí)間：2018-07-26 13:35

【摘要】：金剛石薄膜有著高的熱導(dǎo)率,高的介質(zhì)擊穿場強(qiáng),高的載流子遷移率以及寬的禁帶等優(yōu)點(diǎn),是非常理想的功能材料。摻雜使金剛石薄膜具有獨(dú)特的電學(xué)和熱學(xué)性能,使其在半導(dǎo)體領(lǐng)域具有廣闊的應(yīng)用前景,近年來成為國內(nèi)外研究的熱點(diǎn)之一。綜述了金剛石薄膜P型摻雜和N型摻雜的研究現(xiàn)狀,對金剛石薄膜N型摻雜研究中存在的問題進(jìn)行了分析和探索,并對N型金剛石的前景進(jìn)行了展望。
[Abstract]:Diamond films are ideal functional materials because of their high thermal conductivity, high dielectric breakdown field strength, high carrier mobility and wide bandgap. Doping makes diamond thin films have unique electrical and thermal properties, and make them have a broad application prospect in semiconductor field. In recent years, diamond films have become one of the hot research topics at home and abroad. In this paper, the research status of P type doping and N type doping of diamond films is reviewed. The problems existing in the study of N type doping of diamond films are analyzed and explored, and the prospect of N type diamond is prospected.
【作者單位】： 河南理工大學(xué)材料科學(xué)與工程學(xué)院;
【基金】：河南省教育廳重點(diǎn)資助(12A430010) 焦作市應(yīng)用基礎(chǔ)研究項(xiàng)目(212) 河南理工大學(xué)創(chuàng)新型科研團(tuán)隊(duì)支持計(jì)劃資助(T2013-4)
【分類號】：TB383.2
，

本文編號：2146178