【摘要】：本論文從能源短缺、環(huán)境污染以及光伏行業(yè)的發(fā)展現(xiàn)狀入手，引出了銅銦鎵硒（CIGS）薄膜太陽能電池，并對CIGS薄膜電池、工作原理和性能參數(shù)，以及CIGS薄膜的制備做了簡單的介紹。實驗選用磁控濺射法，在鈉鈣玻璃基底上真空鍍制吸收層CIGS薄膜、緩沖層硫化鎘（CdS）薄膜和窗口層（ZnO）薄膜。通過相關的檢測設備X-射線檢測儀、掃描電子顯微鏡（SEM）等。對各層材料探索了不同襯底溫度、不同退火溫度和不同功率等工藝條件對CIGS薄膜表面形貌和結晶性的影響進行了研究。論文得到了以下主要結果： 磁控濺射法制備CIGS吸收層薄膜。固定靶材距基片的距離為10cm，本底真空度為4.0×10-4Pa，氣體壓強為5.5×10-1Pa，氬氣流量為31標準毫升/分鐘（sccm），功率為125W等工藝參數(shù)，在玻璃襯底上分別以不同工藝參數(shù)制備CIGS薄膜，鍍得的薄膜厚度為2μm，隨后在氬氣保護氣氛下對CIGS薄膜進行退火處理。由XRD圖譜檢測分析，對比標準卡片，制得的CIGS薄膜各個峰位一致，說明制得的CIGS薄膜具有黃銅礦結構。 不同襯底溫度濺射沉積CIGS薄膜。在薄膜生長過程中，，襯底溫度是決定薄膜結構的重要條件，對薄膜生長特性有很大影響。實驗固定功率為125W，不經(jīng)退火，制得的不同襯底溫度的CIGS薄膜表面隨著襯底溫度的升高，表面形貌變粗糙。300℃及以下溫度濺射時薄膜表面較為均勻、平坦，400℃及以上溫度濺射所得的薄膜存在較多內(nèi)部缺陷，表面粗糙，有龜裂現(xiàn)象。襯底溫度低于200℃時，CIGS薄膜為非晶結構；隨著襯底溫度升高，CIGS薄膜的（112）衍射峰逐漸升高，薄膜的結晶性越來越明顯。 不同退火溫度對CIGS薄膜的影響。退火處理使材料發(fā)生再結晶，改善材料的結晶性、相組成等性能，進而改善材料的光學和電學性能。固定濺射功率125W，室溫濺射，取出后在氬氣保護氣氛下不同溫度退火60min。CIGS薄膜的衍射峰經(jīng)退火處理后較退火前得到了明顯的增強，CIGS薄膜的結晶性有明顯改善，實驗所制備的CIGS薄膜具有良好的黃銅礦結構。隨著退火溫度的升高，CIGS薄膜的衍射峰先變強后邊弱，在襯底溫度為400℃時（112）晶向的衍射峰最強，此時薄膜表面的原子具有較高的表面擴散能力，能夠占據(jù)有效晶格位置，使低表面能的晶格得以生長。另一方面，室溫濺射后退火薄膜表面出現(xiàn)破碎的氣泡，使得薄膜表面形貌得到破壞。氣泡的成分為InSe相。 不同襯底溫度濺射CIGS薄膜400℃退火。經(jīng)檢測分析，在襯底溫度過低和襯底溫度過高情況下沉積的CIGS薄膜表面均氣泡較多。在襯底溫度為400℃時，CIGS薄膜表面氣泡較少、平坦、致密、連續(xù)性強，是實驗比較理想的CIGS薄膜。當襯底溫度過高時，出現(xiàn)了InSe相，CIGS薄膜的晶向生長隨機性增強。在鈉鈣玻璃基底上400℃濺射并經(jīng)400℃退火所得的CIGS薄膜具有良好的黃銅礦結構、符合化學計量比、結晶性較高，且薄膜表面質(zhì)量較高。 不同功率濺射沉積CIGS薄膜。濺射功率對CIGS薄膜結晶性、形貌、物相結構和晶粒的擇優(yōu)取向等方面有影響。室溫濺射，不經(jīng)退火處理，改變功率條件制得CIGS薄膜。隨著濺射功率的增加，（112）衍射峰先變強后變?nèi)�。當功率升高到一定程度時，CIGS薄膜沿（112）晶向的優(yōu)先生長受到抑制，晶向隨機取向性增強。當濺射功率為165W時，CIGS薄膜出現(xiàn)最強的（112）方向擇優(yōu)取向，而CIGS薄膜結晶的擇優(yōu)取向的原因及對薄膜太陽能電池性能的具體影響現(xiàn)在尚在研究中。 磁控濺射法制備硫化鎘（CdS）薄膜。CdS薄膜在CIGS薄膜電池中作為緩沖層有很重要的作用，CdS薄膜作為緩沖層在電池的研究中必不可少。實驗主要研究了退火對CdS薄膜的影響，制得的CdS薄膜在2θ=26.7度處有很強的峰值，對應于六方相的（002）面或者立方相的（111）面，適合于在CIGS薄膜太陽能電池中使用。400℃退火使CdS晶格長大，晶粒變得均勻，減少了薄膜的晶格缺陷，提高了薄膜的致密性、平整度，改善了薄膜的性能。 磁控濺射法制備氧化鋅（ZnO）薄膜。ZnO薄膜是CIGS薄膜電池的窗口層。本實驗在玻璃襯底上直流、300℃濺射制備ZnO薄膜，設定不同溫度退火。得到的薄膜結構致密，結晶性良好，XRD分析呈現(xiàn)出很強的（002）特征峰。
[Abstract]:In this paper, copper indium gallium selenium (CIGS) thin film solar cells are introduced from energy shortage, environmental pollution and the current development of photovoltaic industry. The working principle and performance parameters of CIGS thin film batteries, and the preparation of CIGS thin film are briefly introduced. The experiment uses magnetron sputtering to vacuum the absorption layer of CI on the base of sodium calcium glass. GS film, buffer layer cadmium sulfide (CdS) film and window layer (ZnO) thin film. Through the related detection equipment, X- ray detector, scanning electron microscope (SEM) and so on. The influence of different substrate temperature, different annealing temperature and different power conditions on the surface morphology and crystallinity of CIGS film was investigated. The following main results are:
The CIGS absorption layer film is prepared by magnetron sputtering. The distance between the fixed target and the substrate is 10cm, the vacuum degree of the base is 4 x 10-4Pa, the gas pressure is 5.5 x 10-1Pa, the argon flow rate is 31 ml / min (SCCM), the power is 125W, and the CIGS film is prepared on the glass substrate with different process parameters, and the thickness of the plating film is 2 u m, Then the CIGS film was annealed under the argon atmosphere. The XRD atlas was used to analyze and compare the standard cards. The different peaks of the prepared CIGS films show that the CIGS film has a chalcopyrite structure.
CIGS film is deposited at different substrate temperature. During the film growth, the substrate temperature is an important condition for determining the structure of the film, and it has a great influence on the growth characteristics of the film. The experimental fixed power is 125W. The surface of the CIGS film with different substrate temperature is rough with the increase of the bottom temperature, and the surface morphology becomes.300 C and the surface morphology becomes rough. At lower temperature, the film surface is more uniform and flat. There are many internal defects, rough surface and crack. The CIGS film is amorphous structure when the substrate temperature is lower than 200. As the substrate temperature rises, the (112) diffraction peak of the CIGS film increases and the crystallinity of the film becomes more and more clear. Obvious.
The effect of annealing temperature on CIGS film. Annealing treatment made the material recrystallized, improved the crystallinity and phase composition of the material, and then improved the optical and electrical properties of the material. The sputtering power of 125W, sputtering at room temperature and annealed at different temperatures of the 60min.CIGS films were annealed after annealing. The crystallinity of the CIGS film is obviously improved and the CIGS film prepared by the experiment has a good chalcopyrite structure. As the annealing temperature increases, the diffraction peak of the CIGS film becomes stronger and the diffraction peak at the substrate temperature of 400 (112) is the strongest, at this time the atom on the surface of the film is higher. The surface diffusion ability can occupy the effective lattice position and make the lattice of low surface energy grow. On the other hand, the surface of the thin film surface appears broken bubbles after sputtering at room temperature. The surface morphology of the film is destroyed. The composition of the bubble is InSe phase.
The CIGS films deposited at different substrate temperatures are annealed at 400 C. The surface of the deposited CIGS films deposited on the substrate temperature is too low and the substrate temperature is too high. At the substrate temperature of 400, the CIGS film has less bubbles, flat, compact and strong continuity. It is an ideal CIGS film for the experiment. When the substrate temperature is too high, In InSe phase, the crystal growth randomness of CIGS films is enhanced. The CIGS films deposited at 400 C on the sodium calcium glass substrate and annealed at 400 C have a good chalcopyrite structure, which conforms to the stoichiometric ratio, with higher crystallinity and the higher surface quality of the films.
The sputtering power has an effect on the crystallinity, morphology, phase structure and preferred orientation of the CIGS film. The sputtering power has the effect on the CIGS films. The CIGS films are prepared by sputtering at room temperature without annealing and changing the power condition. As the sputtering power increases, the diffraction peak becomes stronger and then weakens. When the power increases to a certain extent, the CIGS is increased to a certain extent, CIGS The preferential growth of the film along (112) crystal direction is suppressed and the crystal direction is random orientation. When the sputtering power is 165W, the CIGS film has the strongest (112) orientation preferred orientation. The reasons for the preferred orientation of the CIGS film and the specific response to the performance of the thin film solar cells are still in the study.
The preparation of cadmium sulfide (CdS) thin film.CdS film by magnetron sputtering is very important in the CIGS thin film battery as a buffer layer. As a buffer layer, CdS film is indispensable in the study of the battery. The effect of Annealing on the CdS film is mainly studied. The obtained CdS film has a strong peak at 2 theta =26.7 degrees, corresponding to (002) of the six square phase. The (111) surface of the surface or cubic phase is suitable for the use of.400 C in the CIGS thin film solar cell to grow the CdS lattice, the grain becomes uniform, the lattice defect of the thin film is reduced, the density and the evenness of the film are improved, and the properties of the film are improved.
The.ZnO film of Zinc Oxide (ZnO) film prepared by magnetron sputtering is the window layer of the CIGS thin film battery. This experiment is made on the glass substrate by DC, and the ZnO thin film is prepared by sputtering at 300 C. The thin film is annealed at different temperatures. The obtained thin film has a compact structure and good crystallinity, and the XRD analysis shows a strong (002) characteristic peak.
【學位授予單位】：遼寧工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TM914.4;TB383.2

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