本文選題：納米科技 + 納米材料��； 參考：《山東師范大學(xué)》2017年碩士論文

【摘要】：20世紀(jì)90年代,一種多學(xué)科交叉的高新技術(shù)——納米科技誕生了,它研究的范圍是納米尺度(1-100nm),研究對象包括物質(zhì)分子或原子的特性和相互作用�？茖W(xué)家們通過研究這種特性及其相互作用,利用先進(jìn)的納米高科技設(shè)備,可以制造人們需要的具有某一特定功能的產(chǎn)品,從而造福人類。在納米科技領(lǐng)域,納米科技的發(fā)展離不開納米材料的支撐,尤其是納米材料的制備技術(shù)、測試和表征及其相關(guān)的應(yīng)用。納米材料是20世紀(jì)末在材料科學(xué)領(lǐng)域發(fā)展起來的一個新興的研究方向,納米材料是指構(gòu)成材料的基本單元至少有一維在1-100nm的尺寸(即納米尺度)范圍內(nèi),如果空間三維都在納米尺度,就是零維納米材料;有兩維處于納米尺度,則是一維納米材料;三維空間中僅有一維在納米尺度,叫做二維納米材料;如果是由以上納米材料構(gòu)成的復(fù)合材料,就是三維納米材料。由于納米材料新穎獨(dú)特的結(jié)構(gòu)特點(diǎn),表現(xiàn)出一些新奇的特性,比如導(dǎo)電性好、比表面積大、催化活性強(qiáng)、硬度高等,因此納米材料受到科學(xué)家和科研工作者的極大關(guān)注。本文中采用兩種不同的原料分別是氧化鎵(Ga2O3)和碳(C)的混合粉末、單質(zhì)鎵和氧化鎵粉末的混合物,利用簡單的熱蒸發(fā)法在1300℃高溫下保溫一定的時間,在鍍金硅片上分別得到了氧化鎵(Ga2O3)納米棒和芯殼結(jié)構(gòu)的Ga2O3-Si Ox納米同軸電纜,并用多種檢測手段對樣品的形貌、成分和結(jié)構(gòu)進(jìn)行了測試和分析。主要內(nèi)容有:(1)利用熱蒸發(fā)法,以氧化鎵和碳的混合粉末為原料,鍍金Si(111)片為基底,在1300℃高溫下恒溫加熱30min和60min,制備出了氧化鎵(Ga2O3)納米棒狀結(jié)構(gòu),并利用掃描電子顯微鏡(SEM)和透射電子顯微鏡(TEM)對樣品形貌和成分進(jìn)行分析,通過X射線衍射(XRD)等對樣品結(jié)構(gòu)進(jìn)行了測試。SEM檢測表明實(shí)驗(yàn)合成了大量的納米棒狀結(jié)構(gòu),保溫30min得到的納米棒直徑在微米量級,而保溫60min得到的納米棒的直徑在400-600nm,同時EDS圖譜說明樣品很可能是氧化鎵(Ga2O3),通過X射線衍射(XRD)檢測確定了樣品是單斜晶系的β-Ga2O3,其生長遵循氣-液-固(即VLS)生長機(jī)理,在納米結(jié)構(gòu)形成過程中,中間產(chǎn)物Ga2O(一氧化二鎵,也稱氧化亞鎵)起關(guān)鍵作用。(2)利用熱蒸發(fā)法,以單質(zhì)鎵和氧化鎵粉末的混合物為原料,在1300℃溫度下對混合物恒溫加熱不同的時間,在硅基底上制備出了一種特殊的納米同軸電纜結(jié)構(gòu),該樣品的形貌和成分用掃描電子顯微鏡(SEM)和透射電子顯微鏡(TEM)進(jìn)行檢測,結(jié)構(gòu)通過XRD進(jìn)行了分析。掃描電子顯微鏡(SEM)圖像表明該實(shí)驗(yàn)制備得到了大量的直徑在100-400nm的納米結(jié)構(gòu),而且不同的恒溫加熱時間會對樣品的形貌和結(jié)構(gòu)有顯著的影響,通過透射電子顯微鏡(TEM)、X射線衍射(XRD)和能量色散X射線能譜儀(EDS)檢測確定了這種核殼結(jié)構(gòu),即外部的Si Ox殼包裹著內(nèi)部的氧化鎵(Ga2O3)納米線,其可能的生長機(jī)理:在氧化鎵(Ga2O3)納米線生長的初期以合金液滴指引的VLS生長機(jī)理為主,當(dāng)Si基底表面覆蓋一層納米材料后,以結(jié)構(gòu)缺陷引導(dǎo)的VS生長機(jī)理在之后的納米結(jié)構(gòu)的形成過程中起主要作用,而Si Ox外殼是以氧化鎵(Ga2O3)納米線為模板形成的。
[Abstract]:In 1990s, a multidisciplinary high technology, nanoscale technology, was born. It was studied in the scope of 1-100nm, which includes the properties and interactions of material molecules or atoms. By studying the properties and interactions, scientists can make use of advanced nanotechnology equipment to make people. In the field of nanotechnology, the development of nanotechnology is inseparable from the support of nanomaterials, especially the preparation of nanomaterials, testing and characterization and their related applications. Nanomaterials are a new research direction in the field of material science at the end of the twentieth Century. Nanomaterials are the basic units of the material that have at least one dimension in the size of 1-100nm (i.e., nanoscale), if the three-dimensional space is in the nanoscale, the nanoscale is zero dimensional nanomaterials; the two dimension is in the nanoscale, it is one dimensional nanomaterial; in the three-dimensional space, only one dimension at the nanoscale is called the two-dimensional nanomaterial; if it is The composite materials consisting of the above nanomaterials are three dimensional nanomaterials. Due to the unique and unique structural characteristics of the nanomaterials, some novel properties are shown, such as good conductivity, large surface area, strong catalytic activity, and high hardness. Therefore, nanomaterials are paid great attention by scientists and researchers. Two kinds of materials are used in this paper. Different raw materials are mixed powder of gallium oxide (Ga2O3) and carbon (C), the mixture of gallium and gallium oxide powder, heat preservation for a certain time at 1300 centigrade temperature by simple thermal evaporation. The Ga2O3-Si Ox nano coaxial cable of gallium oxide (Ga2O3) nanorods and core shell structure is obtained on gold plated silicon wafers, and a variety of detection is used. The morphology, composition and structure of the samples were tested and analyzed. The main contents were as follows: (1) using the thermal evaporation method, the mixed powder of gallium oxide and carbon was used as the raw material, the gold plated Si (111) was the substrate, the 30min and 60min were heated at a constant temperature at 1300 C, and the nanoscale bar like structure of gallium oxide (Ga2O3) was prepared, and the scanning electron microscope (SEM) was used. The sample morphology and composition were analyzed with transmission electron microscope (TEM). The sample structure was tested by X ray diffraction (XRD) and.SEM test showed that a large number of nano rod like structures were synthesized. The diameter of nanorods obtained by thermal insulation 30min was in the order of micron, and the diameter of the nanorods obtained by the temperature preserving 60min was in 400-600nm, and the EDS diagram was also shown. The sample is very likely to be gallium oxide (Ga2O3). By X ray diffraction (XRD) detection, the sample is a monoclinic beta -Ga2O3, and its growth follows the growth mechanism of gas liquid solid (VLS). In the formation of nanoscale, the intermediate product Ga2O (two gallium oxide, also known as gallium oxide) plays a key role. (2) using thermal evaporation method, single gallium and gallium. The mixture of gallium oxide powder was used as the raw material. A special nano coaxial cable structure was prepared on the silicon substrate at a temperature of 1300 C at a temperature of 1300. The morphology and composition of the sample were detected by scanning electron microscope (SEM) and transmission electron microscope (TEM). The structure was analyzed by XRD. The electron microscope (SEM) image shows that a large number of nanostructures with a diameter of 100-400nm have been prepared by the experiment, and the different heating time of the constant temperature will have a significant influence on the morphology and structure of the sample. The nuclear shell junction is determined by transmission electron microscope (TEM), X ray diffraction (XRD) and energy dispersive X ray spectrometer (EDS). Structure, the external Si Ox shell is wrapped with internal gallium oxide (Ga2O3) nanowires, and its possible growth mechanism: the VLS growth mechanism guided by droplets of alloy droplets at the initial stage of gallium oxide (Ga2O3) nanowire growth. When the surface of the Si substrate is covered with a layer of nanomaterial, the formation of VS growth mechanism guided by structural defects is formed after the formation of nanomaterials. The Si Ox shell is formed on the template of gallium oxide (Ga2O3) nanowire.
【學(xué)位授予單位】：山東師范大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：O614.371;TB383.1

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