本文選題：類金剛石碳 + 高功率脈沖磁控濺射�。� 參考：《山東大學(xué)》2015年碩士論文

【摘要】：類金剛石碳(Diamond like carbon, DLC)薄膜是一種由sp3和sp2鍵組成的非晶質(zhì)碳膜,顯示出優(yōu)良的機(jī)械、光學(xué)、電學(xué)等性能。高功率脈沖磁控濺射技術(shù)(High power impulse magnetron sputtering, HiPIMS)具有離子化程度高、離子能量低且能量分布集中、制備的薄膜均勻致密等優(yōu)點(diǎn)。本文分別采用直流磁控濺射和HiPIMS方法制備DLC薄膜,探討了濺射工藝參數(shù)——濺射氣壓、濺射負(fù)偏壓、濺射溫度等對(duì)DLC薄膜微觀結(jié)構(gòu)和物理性能的影響,并探究了氮摻雜對(duì)DLC薄膜微觀結(jié)構(gòu)和物理性能的影響。研究結(jié)果如下：1、直流磁控濺射制備DLC薄膜工藝過(guò)程穩(wěn)定,可以得到大面積、厚度均勻的DLC薄膜。DLC薄膜的表面形貌受濺射氣壓和濺射負(fù)偏壓影響較大,隨濺射氣壓的降低和濺射負(fù)偏壓的增加,薄膜的表面粗糙度降低。DLC薄膜的sp3鍵含量受濺射氣壓影響較大,0.4Pa氣壓制備的樣品的sp3鍵含量明顯高于1Pa氣壓制備的樣品。直流磁控濺射方法得到的DLC薄膜的納米硬度普遍在10GPa以下。2、HiPIMS技術(shù)制備DLC薄膜存在穩(wěn)定放電的濺射電壓和濺射氣壓區(qū)間。隨濺射氣壓的降低和濺射負(fù)偏壓的增加,DLC薄膜的表面顆粒粒徑減小。隨濺射負(fù)偏壓由50V增加到100V和濺射氣壓由2Pa減小到1Pa,薄膜的D峰和G峰的相對(duì)強(qiáng)度ID/1G減小,DLC薄膜的sp3含量增加。薄膜的納米硬度與ID/IG成負(fù)相關(guān),1Pa濺射氣壓、100V濺射負(fù)偏壓制備的樣品的納米硬度數(shù)值最高,達(dá)到18.4GPa。相比于直流磁控濺射技術(shù),HiPIMS技術(shù)制備的DLC薄膜顯示出較高的納米硬度。3、使用HiPIMS技術(shù)在N2和Ar混合濺射氣體中實(shí)現(xiàn)氮摻雜的DLC薄膜(DLC:N)的制備。隨N2流量比例的增加,DLC：N薄膜的粗糙度增加,薄膜sp3比例降低,薄膜納米硬度由16.7GPa降低至11.1GPa。50V濺射負(fù)偏壓的施加,DLC:N薄膜變得致密,納米硬度由13.7GPa增加至16.0GPa。300℃下制備的DLC:N薄膜的sp3比例降低,但納米硬度由16.7GPa增加至18.8GPa。
[Abstract]:Diamond like carbon (DLC) films are amorphous carbon films composed of sp3 and sp2 bonds, which show excellent mechanical, optical and electrical properties. High power pulsed magnetron sputtering (power impulse magnetron sputtering, HiPIMS) has the advantages of high degree of ionization, low ion energy and concentrated energy distribution, and the thin films prepared are uniform and compact. DLC thin films were prepared by DC magnetron sputtering and HiPIMS respectively. The effects of sputtering parameters such as sputtering pressure, sputtering negative bias voltage and sputtering temperature on the microstructure and physical properties of DLC films were discussed. The effects of nitrogen doping on the microstructure and physical properties of DLC films were investigated. The results are as follows: 1. The process of DLC thin films prepared by DC magnetron sputtering is stable. The surface morphology of DLC thin films with large area and uniform thickness can be greatly affected by sputtering pressure and negative bias voltage. With the decrease of sputtering pressure and the increase of negative bias voltage, the surface roughness of the films decreased. The sp3 bond content of DLC thin films was greatly affected by sputtering pressure. The sp3 bond content of the samples prepared at 0.4 Pa pressure was significantly higher than that of the samples prepared at 1 Pa pressure. The nanocrystalline hardness of DLC films obtained by DC magnetron sputtering is generally below 10 GPA. 2 / HiPIMS technique has stable discharge sputtering voltage and sputtering pressure range. With the decrease of sputtering pressure and the increase of negative bias voltage, the surface particle size of DLC films decreases. With the increase of negative sputtering bias voltage from 50 V to 100 V and the decrease of sputtering pressure from 2 Pa to 1 Pa, the relative strength of D and G peaks decreases with the increase of sp3 content. The nanocrystalline hardness of the films is negatively correlated with that of ID / IG. The nanohardness of the samples prepared by negative bias voltage sputtering at 1 Pa sputtering pressure is the highest, reaching 18.4GPa. Compared with the DC magnetron sputtering technique (HiPIMS), the DLC thin films prepared by HiPIMS have higher nano-hardness. HiPIMS is used to fabricate nitrogen-doped DLC films in N _ 2 and ar mixed sputtering gases. With the increase of N _ 2 flow rate, the roughness of DLC _ (1) N thin films increases, the sp3 ratio decreases, and the nano-hardness decreases from 16.7 GPA to 11.1GPa.50V sputtering negative bias voltage. The sp3 ratio of DLC: n films prepared at 300 鈩，

本文編號(hào)：2077747