發(fā)布時(shí)間：2018-06-26 04:45

  本文選題：氮化鋁 + 金屬有機(jī)物化學(xué)氣相淀積��； 參考：《西安電子科技大學(xué)》2015年碩士論文

【摘要】：AlN材料以其高禁帶寬度、擊穿電場(chǎng)強(qiáng)、熱導(dǎo)率高和高紫外透過率等優(yōu)越的物理、光學(xué)和電學(xué)性質(zhì),在大功率器件、耐高壓器件、高溫器件和紫外光電器件等領(lǐng)域得到了非常廣泛的應(yīng)用。雖然MOCVD方法是生長(zhǎng)高質(zhì)量AlN薄膜的主流技術(shù),但其生長(zhǎng)動(dòng)力學(xué)機(jī)理與生長(zhǎng)模型等理論研究遠(yuǎn)落后生長(zhǎng)實(shí)驗(yàn)研究�；贕rove理論和KMC方法,本文進(jìn)行了MOCVD生長(zhǎng)AlN薄膜的動(dòng)力學(xué)模型建立與模擬研究,并將模型模擬結(jié)果與實(shí)驗(yàn)數(shù)值進(jìn)行了對(duì)比,模型對(duì)于實(shí)際工藝生長(zhǎng)具有指導(dǎo)意義�；贛OCVD技術(shù)生長(zhǎng)AlN薄膜的生長(zhǎng)工藝、生長(zhǎng)特性和生長(zhǎng)動(dòng)力學(xué)實(shí)驗(yàn),本論文對(duì)反應(yīng)前軀體TMAl和NH3的化學(xué)反應(yīng)機(jī)理和氣相輸運(yùn)過程進(jìn)行了系統(tǒng)地分析研究,深入理解了各條反應(yīng)路徑對(duì)于最終薄膜生長(zhǎng)的影響�；贏lN生長(zhǎng)特性和反應(yīng)機(jī)理的研究分析結(jié)果,本論文采用Grove理論,研究建立了MOCVD生長(zhǎng)AlN薄膜的生長(zhǎng)速率模型,根據(jù)AlN的生長(zhǎng)特性,計(jì)算并確定了氣相輸運(yùn)系數(shù)hg、表面反應(yīng)速率常數(shù)ks、單位薄膜生長(zhǎng)所需分子數(shù)等模型參數(shù);基于該模型,進(jìn)行了不同溫度(523K-1223K)下和不同壓強(qiáng)(0Pa-2240Pa)下AlN生長(zhǎng)速率模型的實(shí)驗(yàn)驗(yàn)證;對(duì)比結(jié)果表明,該模型計(jì)算結(jié)果與實(shí)驗(yàn)結(jié)果十分吻合:不同溫度下生長(zhǎng)速率模型的平均誤差為8.63%,不同壓強(qiáng)下生長(zhǎng)速率模型的平均誤差為8.03%。采用動(dòng)力學(xué)蒙特卡洛(KMC)算法,本論文對(duì)MOCVD工藝生長(zhǎng)AlN薄膜的生長(zhǎng)動(dòng)力學(xué)及表面形貌進(jìn)行了模擬研究。根據(jù)AlN的結(jié)構(gòu)和生長(zhǎng)特性,研究建立了AlN薄膜的表面生長(zhǎng)動(dòng)力學(xué)模型。根據(jù)AlN粒子之間相互作用的勢(shì)壘能數(shù)據(jù),計(jì)算了AlN粒子的吸附沉積速率和表面遷移速率等模型參數(shù);基于KMC原理,以AlN四面體結(jié)構(gòu)分子為模型的最基本單元;采用MATLAB語(yǔ)言,對(duì)原子級(jí)動(dòng)力學(xué)過程進(jìn)行了程序化實(shí)現(xiàn);進(jìn)行了AlN粒子從成核到薄膜的KMC生長(zhǎng)模擬,給出了不同生長(zhǎng)速率和不同生長(zhǎng)時(shí)間下的表面形貌圖。
[Abstract]:AlN materials have excellent physical, optical and electrical properties such as high band gap, strong breakdown electric field, high thermal conductivity and high ultraviolet transmittance. High temperature devices and ultraviolet optoelectronic devices have been widely used in many fields. Although MOCVD is the mainstream technique for the growth of high quality AlN thin films, the growth kinetics and growth model of MOCVD are far behind the experimental study. Based on Grove theory and KMC method, the dynamic model of AlN thin films grown by MOCVD was established and simulated, and the simulation results were compared with the experimental data. Based on the growth process, growth characteristics and growth kinetics of AlN thin films grown by MOCVD technology, the chemical reaction mechanism and gas phase transport process of TMAl and NH3 in the body before the reaction were systematically analyzed and studied in this paper. The effect of each reaction path on the growth of the final film was thoroughly understood. Based on the analysis of the growth characteristics and reaction mechanism of AlN, the growth rate model of AlN thin films grown by MOCVD was established by Grove theory. The model parameters such as gas transport coefficient (Hg), surface reaction rate constant (KS) and the number of molecules needed for the growth of the film were calculated and determined, based on which the AlN growth rate models at different temperatures (523K-1223K) and different pressures (0Pa-2240Pa) were tested. The comparison results show that the calculated results are in good agreement with the experimental results: the average error of the growth rate model at different temperatures is 8.63, and the average error of the growth rate model under different pressures is 8.03. Dynamic Monte Carlo (KMC) algorithm was used to simulate the growth kinetics and surface morphology of AlN films grown by MOCVD. According to the structure and growth characteristics of AlN, the surface growth kinetics model of AlN thin films was established. Based on the barrier energy data of the interaction between AlN particles, the adsorption deposition rate and surface migration rate of AlN particles are calculated. Based on the KMC principle, the AlN tetrahedron molecule is taken as the most basic unit of the model. The atomic level kinetic process was programmed and the KMC growth of AlN particles from nucleation to film was simulated. The surface morphology of AlN particles was obtained at different growth rates and different growth times.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2

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