本文選題：TaN薄膜 + 微波薄膜匹配負載��； 參考：《電子科技大學》2015年碩士論文

【摘要】：微波功率薄膜匹配負載是微波電路與系統(tǒng)中的基本元件之一,被廣泛應用于基站,雷達,航天等領域的無線通信系統(tǒng)中。隨著電子系統(tǒng)小型化、集成化和高頻化的發(fā)展,迫切需求高頻、大功率、集成化的薄膜匹配負載。本文對低電阻溫度系數(shù)的TaN薄膜材料及寬頻、大功率的薄膜匹配負載進行了系統(tǒng)的研究。在TaN薄膜材料方面,采用電阻溫度系數(shù)(TCR)為正的Ta膜和TiN膜與電阻溫度系數(shù)為負的TaN薄膜構建了低TCR的Ta/TaN和TiN/TaN多層膜材料。實驗結果表明,對于Ta與TaN構成的多層膜結構(Ta/TaN)2,當?shù)髁繌?%上升到10%,薄膜的電阻率從165.2μΩ·cm增加到263.6μΩ·cm,TCR從225 ppm/℃下降到-213.54 ppm/℃。當?shù)髁繛?%時,薄膜的TCR為18 ppm/℃,接近于零,但電阻率僅為196.4μΩ·cm。為了解決Ta膜電阻率太小而使得Ta/TaN多層膜電阻率較小的問題,引入了電阻率較大的TiN膜構建了TiN/TaN多層膜。對于TiN/TaN多層膜,隨著TaN層濺射時間從5min到17min,薄膜的電阻率從400μΩ·cm下降到260.48μΩ·cm,TCR從960 ppm/℃下降到-164 ppm/℃。在薄膜匹配負載的設計和仿真方面,利用有耗傳輸線理論建立匹配負載的等效電路,并用HFSS軟件進行優(yōu)化。設計了一款單電阻膜匹配負載1,其工作頻率為DC-18 GHz,承載功率為10 W,電壓駐波比(VSWR)小于1.3。為了克服匹配負載的工作頻率與承載功率不能同時提高的難題,利用功率分配思想設計了陣列型匹配負載2和3,其中負載2的頻率為DC-20 GHz,承載功率為40 W,VSWR小于1.3;負載3的頻率為DC-20 GHz,承載功率為100 W,VSWR小于1.3,其承載功率是匹配負載2的2.5倍。為了減少高頻器件的接地工藝,設計了一款無卷繞電極的負載4,其頻率為30 GHz-42 GHz,承載功率為80 W,VSWR小于1.3。利用熱仿真軟件ePHysics仿真各個負載在滿功率下負載的表面溫度分布圖,仿真結果表明所設計的負載的最高溫度均不超過125℃,達到了設計要求。利用射頻磁控濺射技術、掩膜圖形化和絲網(wǎng)印刷技術制備了薄膜負載器件,并用矢量網(wǎng)絡分析儀測試器件的微波性能。所設計的三種負載的VSWR均小于1.3,負載4在工作頻率范圍內(nèi)VSWR小于1.5。加載功率測試結果表明,所有匹配負載的表面最高溫度均小于125℃,滿足了負載器件的功率承載能力。采用紅外探測儀觀察匹配負載2的溫度分布情況,,表明器件達到了功率分配的目的。
[Abstract]:Microwave power film matching load is one of the basic components in microwave circuits and systems. It is widely used in wireless communication systems in base station, radar, space and other fields. With the development of electronic system miniaturization, integration and high frequency, high frequency, high power, integrated film matching load is urgently needed. A number of TaN film materials and wide frequency, high-power film matching loads are systematically studied. In the TaN film materials, the low TCR Ta/TaN and TiN/TaN multilayer films are constructed by using the resistance temperature coefficient (TCR) as the positive Ta film and TiN film and the negative TaN film with the resistance temperature coefficient. The experimental results show that the composition of Ta and TaN is more than that of Ta and TaN. Layer film structure (Ta/TaN) 2, when the nitrogen flow increased from 3% to 10%, the resistivity of the film increased from 165.2 uomega cm to 263.6 muomega cm, and TCR decreased from 225 ppm/ to -213.54 ppm/. When the nitrogen flow rate was 4%, the TCR of the film was 18 ppm/, close to zero, but the resistivity was only 196.4 Omega cm. to make Ta/TaN multilayer films to be too small to make Ta/TaN multilayer films to be too small. The problem of small resistivity is that the TiN/TaN multilayer film is constructed by introducing a large resistivity TiN film. For TiN/TaN multilayer, with the sputtering time of TaN layer from 5min to 17min, the resistivity of the film decreases from 400 uomega cm to 260.48 Omega cm, TCR decreases from 960 ppm/ to -164 ppm/. The equivalent circuit of matching load is set up in the theory of transmission line, and is optimized by HFSS software. A single resistance membrane matching load 1, whose working frequency is DC-18 GHz, the load power is 10 W, and the voltage in Bobbi (VSWR) is less than 1.3. to overcome the problem that the working frequency of the matching load and the load power can not be simultaneously raised. The matching idea designed the array type matching load 2 and 3, of which the frequency of the load 2 is DC-20 GHz, the load power is 40 W, the VSWR is less than 1.3, the load 3 is DC-20 GHz, the load power is 100 W, VSWR is less than 1.3, and the load power is 2.5 times of the matched load 2. In order to reduce the grounding process of high frequency parts, a load 4 load without winding electrode is designed. The frequency is 30 GHz-42 GHz, the bearing power is 80 W, the VSWR is less than 1.3., and the thermal simulation software ePHysics is used to simulate the surface temperature distribution of the load under full power load. The simulation results show that the maximum temperature of the load is not more than 125 degrees C, and the design requirements are reached. The film load device is prepared by the network printing technology, and the microwave performance of the device is tested by a vector network analyzer. The VSWR of the three loads is less than 1.3. The load 4 at the working frequency range of VSWR less than 1.5. loading power test results show that the highest surface temperature of all the matched loads is less than 125 C and satisfies the load device. The temperature distribution of matching load 2 is observed by infrared detector. It shows that the device achieves the purpose of power distribution.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TB383.2

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本文編號：2003487