本文選題：熱電材料 + 多晶SnSe��； 參考：《低溫物理學(xué)報(bào)》2017年03期

【摘要】：熔煉方法制備微量摻雜多晶硒化錫NaxSn1-xSe(x=0.001-0.005)熱電材料,并研究其熱、電輸運(yùn)性質(zhì).研究結(jié)果表明:對(duì)硒化錫進(jìn)行Na元素輕摻雜(x=0.003)時(shí),摻雜樣品的電導(dǎo)率有了兩個(gè)數(shù)量級(jí)的提高,同時(shí)其熱導(dǎo)率也有一定的降低;而且摻雜后的樣品還擁有很高的Seebeck系數(shù),Seebeck最大能達(dá)到300V/K左右.因此硒化錫摻鈉多晶Na0.003Sn0.997Se的ZT值能達(dá)到1.2左右.
[Abstract]:The micro-doped polycrystalline tin selenide (NaxSn1-xSex) 0.001-0.005) thermoelectric material was prepared by melting method and its thermal and electrical transport properties were studied. The results showed that the conductivity of the doped samples was increased by two orders of magnitude, and the thermal conductivity of the doped samples was also decreased. The doped samples also have a high Seebeck coefficient and the maximum Seebeck can reach about 300V / K. Therefore, the ZT value of sodium tin selenide polycrystalline Na 0.003Sn0.997Se can reach about 1.2.
【作者單位】： 中國(guó)科學(xué)院合肥物質(zhì)科學(xué)研究院固體物理研究所;中國(guó)科學(xué)技術(shù)大學(xué);
【基金】：Project supported by the Natural Science Foundation of China(Grant No.51672278,11674322and 11374306) AnHui Provincial Natural Science Foundation(Grant No.1608085MA17)
【分類號(hào)】：TB34

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本文編號(hào)：1996050