一維光子晶體在紅外隱身材料應(yīng)用方面的設(shè)計(jì)與實(shí)現(xiàn)
本文選題:紅外探測(cè) + 隱身技術(shù); 參考:《華中科技大學(xué)》2015年碩士論文
【摘要】:隨著現(xiàn)代科技的進(jìn)步,各類先進(jìn)探測(cè)器以及精確制導(dǎo)技術(shù)獲得了快速發(fā)展,雷達(dá)和紅外探測(cè)技術(shù)作為常用的探測(cè)技術(shù)也在軍事探測(cè)方面得到了越來越廣泛的應(yīng)用。這些先進(jìn)的探測(cè)技術(shù)和手段,將會(huì)使得傳統(tǒng)軍事目標(biāo)系統(tǒng)面臨的威脅越來越大。所以,怎樣最大程度地降低暴露目標(biāo)物體的特征,已經(jīng)引起了全世界科學(xué)家們的廣泛關(guān)注和重視。因此,隱身技術(shù)儼然已成為最重要的和最可靠的軍事戰(zhàn)術(shù)技術(shù)。隱身材料技術(shù)中最重要的研究方向是針對(duì)雷達(dá)和紅外的兼容隱身功能。然而,由于軍事隱身材料在雷達(dá)波段范圍內(nèi),要求具有高的吸收率和低反射率,而在紅外波段卻往往要求具有低發(fā)射率。要想在上述兩個(gè)波段同時(shí)具有高吸收和低發(fā)射是非常困難的。目前,雖然有大量的研究都集中在了雷達(dá)吸波材料上面,并且在雷達(dá)波段取得了優(yōu)良的雷達(dá)隱身性能,但這些雷達(dá)吸波材料在紅外波段卻具有較高的發(fā)射率。也有很多研究報(bào)道,在紅外波段也可以取得較低的發(fā)射率,但在雷達(dá)波段通常會(huì)展示出較高的反射率。但是,關(guān)于雷達(dá)紅外兼容隱身方面的報(bào)道卻少之又少。在過去的研究中,由于光子晶體在對(duì)內(nèi)部光源的輻射控制方面具有極大的應(yīng)用潛力而得到了人們?cè)絹碓蕉嗟年P(guān)注,它對(duì)能量位于禁帶范圍內(nèi)的入射電磁波具有較高的反射率特性。這些光子晶體材料具有不同于單一介質(zhì)和金屬的獨(dú)特電磁學(xué)性質(zhì),它可以禁止某些具有特定頻率的電磁波傳播。我們也可以將這些光子晶體叫做光子帶隙材料,沒有任何光子態(tài)密度存在。所以紅外隱身可以由光子禁帶落在紅外波段的光子晶體材料來實(shí)現(xiàn)。在本文中,提出并通過數(shù)值計(jì)算以及實(shí)驗(yàn)等方面設(shè)計(jì)了一種可應(yīng)用于雷達(dá)-紅外兼容隱身的新型雙異質(zhì)結(jié)復(fù)合光子晶體材料。首先,根據(jù)薄膜光學(xué)理論中的傳輸矩陣方法計(jì)算了所設(shè)計(jì)結(jié)構(gòu)的傳輸特性,該結(jié)構(gòu)由具有不同厚度的鍺層和硫化鋅層組成。計(jì)算結(jié)果表明,一維光子晶體在單一波段范圍內(nèi),隨著周期數(shù)的增加可以獲得超高的反射率。然后,基于分布式布拉格反射微腔原理,提出了由四個(gè)周期光學(xué)厚度分別為0.797μm、0.592μm、1.480μm和2.114μm的光子晶體所組成的雙異質(zhì)結(jié)復(fù)合光子晶體結(jié)構(gòu)。計(jì)算結(jié)果表明,所設(shè)計(jì)的雙異質(zhì)結(jié)光子晶體結(jié)構(gòu)在紅外雙波段3~5μm和8~14μm范圍內(nèi)具有大于0.99的超高反射率,并且實(shí)驗(yàn)結(jié)果與計(jì)算仿真結(jié)果吻合的較好。進(jìn)一步實(shí)驗(yàn)結(jié)果表明,與傳統(tǒng)紅外隱身材料相比該結(jié)構(gòu)在紅外雙波段3~5μm和8~14μm的發(fā)射率分別低至0.073和0.042。另外,由于該結(jié)構(gòu)在雷達(dá)波段具有超高透射特性,可以用來構(gòu)建雷達(dá)紅外兼容隱身材料。
[Abstract]:With the development of modern science and technology, various kinds of advanced detectors and precision guidance technology have been developed rapidly, radar and infrared detection technology as common detection technology has been more and more widely used in military detection. These advanced detection techniques and methods will make the traditional military target system face more and more threats. Therefore, how to minimize the characteristics of exposed objects has attracted the attention of scientists all over the world. Therefore, stealth technology has become the most important and reliable military tactics technology. The most important research direction of stealth material technology is the compatible stealth function of radar and infrared. However, military stealth materials require high absorptivity and low reflectivity in the range of radar band, but low emissivity in infrared band. It is very difficult to have both high absorption and low emission in these two bands. At present, although a great deal of research is focused on radar absorbing materials and excellent radar stealth performance is obtained in radar band, these radar absorbing materials have high emissivity in infrared band. There are also many reports that low emissivity can be obtained in the infrared band, but high reflectivity is usually shown in the radar band. However, there are few reports of radar infrared compatible stealth. In the past, photonic crystals have attracted more and more attention because of their great application potential in radiation control of internal light sources. It has high reflectivity to incident electromagnetic waves with energy in the band gap range. These photonic crystal materials have unique electromagnetic properties which are different from single medium and metal. They can prevent the propagation of certain electromagnetic waves with specific frequencies. We can also call these photonic crystals photonic bandgap materials without any density of photon states. Therefore, infrared stealth can be achieved by photonic crystal materials with photonic band gap falling in infrared band. In this paper, a novel dual-heterojunction photonic crystal material, which can be used for radar infrared compatible stealth, is proposed and designed by numerical calculation and experiments. Firstly, the transmission characteristics of the designed structure are calculated according to the transfer matrix method in thin film optics theory. The structure consists of germanium layer and zinc sulfide layer with different thickness. The calculated results show that the high reflectivity of one-dimensional photonic crystals can be obtained with the increase of the number of periods in a single band. Then, based on the principle of distributed Bragg reflection microcavity, a double heterojunction photonic crystal structure consisting of four photonic crystals with the optical thickness of 0.797 渭 m 0.52 渭 m and 2.114 渭 m is proposed. The calculated results show that the designed double heterojunction photonic crystal structure has a super-high reflectivity of more than 0.99 in the range of 3 渭 m and 814 渭 m in the infrared dual band, and the experimental results are in good agreement with the calculated results. The further experimental results show that the emissivity of the structure is as low as 0.073 and 0.042, respectively, when compared with the conventional infrared stealth material. In addition, the structure can be used to construct infrared compatible stealth materials because of its ultra-high transmission in radar band.
【學(xué)位授予單位】:華中科技大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2015
【分類號(hào)】:O734;TB34
【參考文獻(xiàn)】
相關(guān)期刊論文 前10條
1 趙大鵬;時(shí)家明;汪家春;袁忠才;劉必鎏;;中長(zhǎng)波紅外雙波段全向反射鏡的設(shè)計(jì)[J];激光與紅外;2008年05期
2 沈均平;劉建永;胡登高;伍中軍;李凌;;兩棲裝甲車輛對(duì)抗雙紅外制導(dǎo)偽裝方法研究[J];紅外與激光工程;2007年04期
3 杜永;邢宏龍;陳水林;;熱紅外隱身涂料的研究進(jìn)展[J];涂料工業(yè);2007年03期
4 喬明霞;黃偉;張彬;;YbF_3和ZnS薄膜的折射率和厚度的分光光度法測(cè)定[J];激光雜志;2006年01期
5 張耀平,許鴻,凌寧,張?jiān)贫?YbF_3沉積速率對(duì)紅外激光薄膜表面缺陷的影響[J];強(qiáng)激光與粒子束;2005年07期
6 黃弼勤,顧培夫;一維光子晶體禁帶的展寬[J];光學(xué)學(xué)報(bào);2003年12期
7 陳慰宗,忽滿利,李紹雄,高平安,申影;一維光子晶體禁帶的特點(diǎn)及增寬[J];西北大學(xué)學(xué)報(bào)(自然科學(xué)版);2002年06期
8 費(fèi)逸偉,唐衛(wèi)紅,朱富進(jìn),胡役芹,張永國(guó);低發(fā)射率偽裝涂料的研究現(xiàn)狀與發(fā)展方向[J];紅外技術(shù);2002年03期
9 歐陽征標(biāo),朱駿,李景鎮(zhèn);兩端有慢變結(jié)構(gòu)的光子晶體的能帶特性研究[J];光學(xué)學(xué)報(bào);2002年05期
10 田乃林;紅外隱身方法與材料的發(fā)展[J];化工進(jìn)展;2002年04期
相關(guān)博士學(xué)位論文 前1條
1 李明宇;基于薄膜技術(shù)的光子晶體理論與器件研究[D];浙江大學(xué);2006年
,本文編號(hào):1982305
本文鏈接:http://sikaile.net/kejilunwen/cailiaohuaxuelunwen/1982305.html