本文選題：ZnS薄膜 + 化學(xué)水浴法��； 參考：《鄭州大學(xué)》2015年碩士論文

【摘要】：在諸多半導(dǎo)體材料中,Zn S是一種重要的禁帶寬度為3.7 e V半導(dǎo)體材料,在光電等方面有廣泛的應(yīng)用。對(duì)Zn S薄膜進(jìn)行摻雜和熱退火處理可以明顯的改善Zn S薄膜的物理、化學(xué)等性能,在摻雜方面Zn S薄膜的n型摻雜尤為重要,為以后的p-n結(jié)的制備打下基礎(chǔ)。本文利用化學(xué)水浴法合成了多晶的Zn S薄膜和Zn S:Al3+薄膜,深入研究了樣品的微結(jié)構(gòu)和光學(xué)性質(zhì)。主要的研究結(jié)果有:(1)當(dāng)氨水作為絡(luò)合劑和p H值調(diào)節(jié)劑時(shí),光快速熱處理并沒有導(dǎo)致非晶態(tài)的Zn S薄膜的結(jié)晶,這顯示硅襯底上水浴制備結(jié)晶的Zn S薄膜單采用氨水作為絡(luò)合劑是不行的;隨著Thermal Treatment Temperature(Trtt)的升高,Zn S薄膜顆粒有比較明顯的細(xì)化趨勢,顆粒尺寸分布趨于均勻,表面粗糙度趨于減小,這可能是歸結(jié)于光快速熱處理過程中顆粒的重新排列和生長;薄膜的吸收邊隨Trtt總體趨于紅移,該紅移可歸結(jié)于薄膜的應(yīng)力的變化;Trtt的升高起初增大了薄膜中的點(diǎn)缺陷,隨后由于薄膜內(nèi)部的原子重新排列,點(diǎn)缺陷減少。值得注意是當(dāng)Trtt300℃時(shí),與點(diǎn)缺陷相關(guān)的發(fā)光峰幾乎消失。(2)采用三乙醇胺作為絡(luò)合劑,氨水作為p H值調(diào)節(jié)劑,在重?fù)诫s的p型Si(100)襯底上合成了Zn O薄膜而不是Zn S薄膜,這可能歸咎于Zn S的水解;選用乙二胺作為絡(luò)合劑,當(dāng)p H值為4時(shí),制備出了結(jié)晶質(zhì)量較好的Zn S薄膜。(3)選用乙二胺作為絡(luò)合劑,研究了乙二胺濃度對(duì)Zn S性質(zhì)的影響。所制備的Zn S由立方相和少量的六方相組成。未加入乙二胺時(shí),薄膜表面粗糙,出現(xiàn)了明顯的顆粒團(tuán)聚現(xiàn)象。隨著乙二胺濃度的增加,薄膜表面趨于光滑和致密,可以看出絡(luò)合劑在改善薄膜表面方面扮演著重要的角色。光學(xué)吸收邊隨乙二胺濃度的增加會(huì)藍(lán)移,這歸結(jié)于薄膜中應(yīng)力的影響。所有樣品的發(fā)射光譜均在可見光區(qū)呈現(xiàn)了寬的發(fā)射帶,這與薄膜中的點(diǎn)缺陷(鋅空位和硫空位)有關(guān)。(4)前驅(qū)物鋅離子濃度(CZn)對(duì)Zn S薄膜性能的影響很明顯。當(dāng)CZn為0.25 M時(shí),XRD譜中觀測不到明顯的Zn S特征衍射峰,這表明在這種濃度下很難生成Zn S薄膜,或生成的薄膜結(jié)晶性不好,呈現(xiàn)非晶態(tài)。隨著CZn的增加,薄膜的結(jié)晶性得到明顯改善。(5)本征的Zn S薄膜的電阻率為1.5×107Ωcm,當(dāng)Al Cl3為1.0 mmol時(shí),電阻率降至4.2×102Ωcm,然后又隨著Al Cl3的增加而有所增大。薄膜電阻率起初的降低歸結(jié)于部分Al3+對(duì)Zn2+的替代和薄膜結(jié)晶性的改善,前者會(huì)引起薄膜中自由載流子濃度的增加,而后者會(huì)提高自由載流子的遷移率。而后電阻率的增加可歸咎于晶界散射的增強(qiáng)。
[Abstract]:ZNS is a kind of important semiconductor material with a band gap of 3.7 EV, which has been widely used in the field of photoelectricity and so on. Doping and thermal annealing of ZnS thin films can obviously improve the physical and chemical properties of ZnS films. The n-type doping of ZnS films is particularly important in doping aspect, which lays the foundation for the preparation of p-n junctions in the future. Polycrystalline ZnS and Zn S:Al3 thin films were synthesized by chemical bath method. The microstructure and optical properties of the samples were studied. The main results are as follows: (1) when ammonia is used as a complexing agent and pH value regulator, rapid photothermal treatment does not result in the crystallization of amorphous ZnS films. The results show that it is not possible to use ammonia water as complexing agent to prepare crystalline ZnS thin films on Si substrates in water bath, and the grain size distribution tends to be uniform with the increase of Thermal Treatment temperature trtt. The surface roughness tends to decrease, which may be attributed to the rearrangement and growth of the particles during the photorapid heat treatment, and the absorption edge of the film tends to redshift with the Trtt as a whole. The redshift can be attributed to the change of stress in the film. The increase of Trtt initially increases the point defect in the film, then decreases the point defect due to the rearrangement of atoms in the film. It is worth noting that, at Trtt300 鈩，

本文編號(hào)：1940769