本文選題：氧化鋅 + p型摻雜　； 參考：《中國(guó)科學(xué)院研究生院(長(zhǎng)春光學(xué)精密機(jī)械與物理研究所)》2015年博士論文

【摘要】：氧化鋅(ZnO)是直接帶隙寬禁帶II-VI族化合物半導(dǎo)體,禁帶寬度3.37 eV。由于其大的激子結(jié)合能(60 meV)和優(yōu)異的光電特性,使得ZnO基材料在紫外發(fā)光器件和低閡值激光器件等方面具有巨大的應(yīng)用潛力。然而ZnO p型摻雜問題還沒有完全解決,其器件性能依然低下,是制約ZnO基材料在光電領(lǐng)域應(yīng)用的瓶頸問題。本論文針對(duì)該問題展開研究,取得的主要結(jié)果如下：1.提出利用分布布拉格反射鏡提高氧化鋅基發(fā)光器件的性能：利用等離子體輔助分子束外延技術(shù),采用鋰氮共摻雜方法制備p型氧化鋅基薄膜,構(gòu)建p-MgZnO/i-ZnO/n-MgZnO雙異質(zhì)結(jié)發(fā)光器件。在正向電壓下,獲得了室溫下發(fā)光峰位于400 nm附近的電致發(fā)光,發(fā)光來(lái)源于ZnO近帶邊發(fā)光。在器件背側(cè)加入反射率在400 nm附近約為98%的分布布拉格反射鏡,使器件表面發(fā)光強(qiáng)度提高了1.6倍。2.提出引入空穴注入層顯著提高了氧化鋅基發(fā)光器件的輸出功率：針對(duì)p型氧化鋅空穴濃度低,影響發(fā)光器件性能的問題,引入p型GaN作為空穴注入層,構(gòu)建n-ZnO/p-ZnO/p-GaN發(fā)光器件。在注入電流為60 mA時(shí),器件發(fā)光功率達(dá)到18.5μW,比無(wú)空穴注入層的ZnO p-n結(jié)提高了3個(gè)數(shù)量級(jí),該器件性能的提高是由于空穴從p-GaN注入到p-ZnO中,并與n-ZnO中的電子復(fù)合發(fā)光。3.利用高結(jié)晶質(zhì)量的氧化鋅納米線陣列作為發(fā)光層,實(shí)現(xiàn)了氧化鋅p-n結(jié)電泵浦隨機(jī)激光：利用金屬有機(jī)物化學(xué)氣相沉積技術(shù),在藍(lán)寶石襯底上生長(zhǎng)ZnO納米線陣列,在此基礎(chǔ)上利用分子束外延生長(zhǎng)p型MgZnO,構(gòu)建ZnO納米線/p-MgZnO核殼異質(zhì)結(jié)器件,獲得了室溫下電泵浦隨機(jī)激光。激光閾值電流約為15 mA。ZnO納米線高的結(jié)晶質(zhì)量以及異質(zhì)結(jié)結(jié)構(gòu)對(duì)載流子的限制作用,有助于降低激射閾值。由此證明,納米線核殼異質(zhì)結(jié)結(jié)構(gòu)是制備電泵浦隨機(jī)激光器件的良好結(jié)構(gòu)。并且采用高空穴濃度的p型金剛石作為空穴注入層,提高了此器件的性能.
[Abstract]:Zinc oxide (ZnO) is a direct band gap wide band gap II-VI compound semiconductor with a band gap of 3.37 EV. Due to its large exciton binding energy (60 MEV) and excellent optoelectronic properties, ZnO based materials have great application potential in UV luminescent devices and low threshold laser devices. However, the problem of p-type ZnO doping has not been completely solved, and its device performance is still low, which is the bottleneck problem that restricts the application of ZnO based materials in the field of optoelectronics. The main results of this paper are as follows: 1. Using distributed Bragg reflector to improve the performance of ZnO-based luminescent devices, P-type ZnO thin films were prepared by using plasma assisted molecular beam epitaxy (MBE) technique and co-doped with lithium nitrogen, and p-MgZnO/i-ZnO/n-MgZnO double heterojunction light-emitting devices were constructed. At the forward voltage, the electroluminescence with a peak near 400nm is obtained at room temperature. The luminescence comes from the near-band luminescence of ZnO. A distributed Bragg reflector with a reflectivity of about 98% near 400 nm is added to the back of the device, which increases the luminescence intensity of the device surface by 1.6 times. It is proposed that the hole injection layer can significantly increase the output power of ZnO based light-emitting devices. In view of the problem that the concentration of p-type ZnO holes is low and the performance of the devices is affected, p-type GaN is introduced as the hole injection layer to construct the n-ZnO/p-ZnO/p-GaN light-emitting devices. When the injection current is 60 Ma, the luminescence power of the device reaches 18.5 渭 W, which is three orders of magnitude higher than that of the ZnO p-n junction without hole injection layer. The improvement of the device performance is due to the hole being injected from p-GaN to p-ZnO and recombined with the electron in n-ZnO. 3. Using ZnO nanowire array with high crystalline quality as the luminescent layer, an electrically pumped random laser with ZnO p-n junction was realized. ZnO nanowire arrays were grown on sapphire substrates by metal-organic chemical vapor deposition. On this basis, p-type MgZnO grown by molecular beam epitaxy (MBE) was used to fabricate ZnO nanowire / p-MgZnO core-shell heterojunction devices, and an electrically pumped random laser was obtained at room temperature. The laser threshold current is about 15 mA.ZnO nanowires with high crystallization quality and the limiting effect of heterojunction structure on carriers, which is helpful to reduce the threshold of laser emission. It is proved that nanowire core-shell heterostructure is a good structure for the fabrication of electrically pumped random laser devices. The high hole concentration p-type diamond is used as the hole injection layer to improve the performance of the device.
【學(xué)位授予單位】：中國(guó)科學(xué)院研究生院(長(zhǎng)春光學(xué)精密機(jī)械與物理研究所)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2

【共引文獻(xiàn)】

相關(guān)期刊論文 前6條

1 周國(guó)安;王東輝;李偉;高文泉;詹陽(yáng);;CMP透明膜厚測(cè)量設(shè)備發(fā)展歷程[J];電子工業(yè)專用設(shè)備;2014年02期

2 高建威;向鵬飛;鄧濤;楊修偉;袁安波;;CCD曝光工藝常見缺陷及解決辦法[J];電子科技;2014年11期

3 李霖;賈亞飛;張?jiān)迄i;楊建章;;光刻機(jī)雙面對(duì)準(zhǔn)精度測(cè)量系統(tǒng)[J];電子工業(yè)專用設(shè)備;2015年03期

4 張瑋琪;王洪建;孫敏;;拋光墊修整系統(tǒng)的應(yīng)用研究[J];電子工業(yè)專用設(shè)備;2015年08期

5 王學(xué)毅;王飛;冉明;劉嶸侃;楊永暉;;亞微米間距PECVD填隙工藝研究[J];微納電子技術(shù);2016年01期

6 蔡燕民;王向朝;黃惠杰;;共軛距可變的光刻投影物鏡光學(xué)設(shè)計(jì)[J];中國(guó)激光;2014年04期

相關(guān)博士學(xué)位論文 前2條

1 張楠;透明有機(jī)薄膜晶體管的研究與制備[D];中國(guó)科學(xué)院研究生院(長(zhǎng)春光學(xué)精密機(jī)械與物理研究所);2013年

2 姜曉明;迭代學(xué)習(xí)控制方法及其在掃描光刻系統(tǒng)中的應(yīng)用研究[D];哈爾濱工業(yè)大學(xué);2014年

，

本文編號(hào)：1927901