本文選題：磁控濺射 + 硅薄膜　； 參考：《蘇州大學(xué)》2015年碩士論文

【摘要】：通過選擇合適的放電驅(qū)動(dòng)頻率,調(diào)控離子能量、離子通量、等離子體密度、電子溫度,來沉積有不同結(jié)構(gòu)特性的硅薄膜,成為調(diào)控薄膜結(jié)構(gòu)與性能的一種有效途徑。但是這種通過驅(qū)動(dòng)頻率調(diào)控硅薄膜結(jié)構(gòu)與性能的技術(shù)手段目前主要應(yīng)用于等離子體增強(qiáng)的化學(xué)氣相沉積(PECVD)技術(shù),極少在濺射沉積硅薄膜方面獲得應(yīng)用。為了研究濺射驅(qū)動(dòng)頻率對(duì)磁控濺射沉積硅薄膜的影響,本文采用2MHz、13.56 MHz、27.12MHz和60 MHz驅(qū)動(dòng)的磁控濺射技術(shù)開展了硅薄膜的沉積及特性研究。論文主要研究了2MHz、13.56MHz、27.12MHz和60 MHz驅(qū)動(dòng)頻率和100-250W的濺射功率對(duì)磁控濺射制備硅薄膜的沉積特性、結(jié)構(gòu)及性能的影響。發(fā)現(xiàn)射頻濺射(13.56MHz、27.12MHz)沉積的薄膜主要呈非晶結(jié)構(gòu),薄膜表面粗糙度較大,形成薄膜的顆粒尺寸也較大;而低頻(2MHz)和甚高頻(60MHz)沉積的薄膜主要呈納米晶結(jié)構(gòu),薄膜表面粗糙度較小,形成薄膜的顆粒尺寸也較小。為了分析薄膜沉積與結(jié)構(gòu)變化的可能原因,論文采用Langmuir探針、拒斥場(chǎng)能量分析儀研究了濺射沉積硅薄膜時(shí)的等離子體特性,發(fā)現(xiàn)隨著驅(qū)動(dòng)頻率的增加,由于體等離子體區(qū)和基片鞘層區(qū)的等離子體性能受到影響,離子能量和電子溫度會(huì)增加,而離子通量和等離子體密度會(huì)減小。離子通量的減小導(dǎo)致了較低的薄膜沉積速率、較小的顆粒尺寸和平均粗糙度,離子能量的增大增強(qiáng)了吸附原子的擴(kuò)散,有助于納米晶硅的形成。因此,硅薄膜的結(jié)構(gòu)隨著濺射頻率的改變而呈現(xiàn)較大變化。根據(jù)甚高頻(60MHz)濺射等離子體特性,論文進(jìn)一步開展了在Ag(111)薄膜基底上甚高頻濺射制備類硅烯薄膜的初步探索。因此,采用濺射技術(shù)沉積硅薄膜時(shí),濺射頻率是影響薄膜沉積與結(jié)構(gòu)特性的重要因素,可以通過濺射頻率調(diào)控技術(shù)來控制硅薄膜的結(jié)構(gòu)。
[Abstract]:By selecting suitable discharge driving frequency, regulating ion energy, ion flux, plasma density and electron temperature, the silicon thin films with different structure characteristics are deposited, which is an effective way to control the structure and properties of the films. However, this technique of controlling the structure and properties of silicon thin films by driving frequency is mainly used in plasma enhanced chemical vapor deposition (PECVD) technology, and is rarely applied in sputtering deposition of silicon thin films. In order to study the effect of sputtering driving frequency on Si thin films deposited by magnetron sputtering, the deposition and characteristics of Si thin films were studied by magnetron sputtering technique driven by 2MHz 13.56MHz and 60 MHz. The effects of driving frequency of 13.56 MHz and 60 MHz and sputtering power of 100-250 W on the deposition characteristics, structure and properties of Si thin films prepared by magnetron sputtering were studied. It was found that the films deposited by RF sputtering (13.56MHz ~ 27.12MHz) were mainly amorphous, the surface roughness of the films was larger, and the grain size of the films formed was larger, while the films deposited at low frequency (2MHz) and VHF (60MHz) were mainly nanocrystalline, and the surface roughness of the films was relatively small. The particle size of the film is also small. In order to analyze the possible causes of deposition and structural changes of thin films, the plasma characteristics of Si films deposited by sputtering are studied by using Langmuir probe and rejection field energy analyzer. It is found that the plasma characteristics increase with the increase of driving frequency. The ion energy and electron temperature will increase and the ion flux and plasma density will decrease because of the influence of the plasma performance in the bulk plasma region and the substrate sheath region. The decrease of ion flux leads to lower deposition rate, smaller particle size and average roughness, and the increase of ion energy enhances the diffusion of adsorbed atoms, which contributes to the formation of nanocrystalline silicon. As a result, the structure of Si thin films changes greatly with the change of sputtering frequency. Based on the plasma characteristics of very high frequency (VHF) 60MHz) sputtering, the preparation of Si-like thin films on the substrates of AgLi _ (111) thin films by VHF sputtering has been investigated in this paper. Therefore, the sputtering frequency is an important factor affecting the deposition and structure of silicon thin films by sputtering technology. The structure of silicon thin films can be controlled by sputtering frequency control technology.
【學(xué)位授予單位】：蘇州大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 盧景霄;文書堂;郭學(xué)軍;李瑞;張磊;;甚高頻對(duì)微晶硅薄膜微觀結(jié)構(gòu)的影響(英文)[J];鄭州大學(xué)學(xué)報(bào)(理學(xué)版);2008年02期

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本文編號(hào)：1901959