發(fā)布時間：2018-05-17 11:24

  本文選題：納米球刻印 + 金納米環(huán)陣列��； 參考：《中國科學(xué)技術(shù)大學(xué)》2017年碩士論文

【摘要】：晶體硅太陽能電池由于發(fā)電成本高于傳統(tǒng)化石能源,限制了其更大范圍地推廣使用。表面呈納米結(jié)構(gòu)的黑硅材料有望從兩個方面解決這個問題,一方面,黑硅材料能夠?qū)軐挼墓庾V范圍以及準(zhǔn)全方位入射的光擁有極好的抗反射性能;另一方面,黑硅材料極好的光吸收性能使得太陽電池的厚度減少至幾十微米以下時依然有很好的關(guān)吸收性能,而目前的商用晶體硅太陽能電池為了有效的吸收入射光,多采用的厚度為～300μm的硅片,硅原材料使用成本約占電池總制造成本的一半。本文中,結(jié)合納米球刻印(NSL)和金屬輔助的化學(xué)刻蝕(MACE)制備出多種納米陣列結(jié)構(gòu)的黑硅材料,并分別從計算仿真和實驗結(jié)果兩個方面分析其光學(xué)性能,找到擁有相對最優(yōu)的抗反射性能的Si納米陣列結(jié)構(gòu)。具體研究內(nèi)容主要集中在以下幾個方面:(1)研究納米球的刻蝕過程,實現(xiàn)非密排聚苯乙烯球直徑的精確控制。然后,基于NSL,結(jié)合電子束蒸發(fā)和磁控離子濺射兩項技術(shù),在Si片表面實現(xiàn)Au納米孔陣列的按需制備和Au納米圓盤陣列的可控制備。在制備Au納米圓盤陣列過程中發(fā)現(xiàn)了 Au納米圓環(huán)陣列的制備方法,進一步研究Au納米圓環(huán)陣列形成的各個步驟,弄清了 Au圓環(huán)陣列的形成機理,最后,制備了不同周期、尺寸大小的Au納米圓環(huán)陣列。(2)以制備得到的Au納米孔陣列、Au納米圓盤陣列作為金屬催化劑,采用MACE分別實現(xiàn)Si納米線陣列的按需制備和Si納米孔陣列的可控制備,分析刻蝕過程中的各個工藝參數(shù)對刻蝕結(jié)果的影響,找到優(yōu)化的刻蝕工藝。然后,以Au納米圓環(huán)陣列為刻蝕催化劑,通過MACE初步實現(xiàn)Si納米孔中線陣列的制備。(3)采用時域有限差分法對不同直徑的Si NWAs和Si NHAs的光學(xué)性能進行系統(tǒng)地仿真模擬,并將模擬仿真結(jié)果與光學(xué)性能的實驗測試結(jié)果進行參照對比。結(jié)果表明長度1μm、周期483nm的有序SiNWAs,在300nm直徑時的抗反射性能達到最強,而當(dāng)直徑為100nm時,宏觀上樣品表面呈深紅色,FDTD的仿真結(jié)果中發(fā)現(xiàn)吸收光譜中波長～570nm處出現(xiàn)一個明顯的吸收峰,這是由于Si NWAs的本征模式的共振吸收所致。長度1μm、周期483nm的有序Si NWHs,在直徑400nm時光吸收率最高,與300nm直徑時Si NWAs相比,其擁有更好的抗反射性能,是相比最優(yōu)的抗反射納米結(jié)構(gòu)材料。
[Abstract]:Crystal silicon solar cells are more widely used because of the higher cost of generating electricity than traditional fossil energy. On the one hand, the black-silicon material has excellent anti-reflection performance for a wide spectrum range and quasi-omni-directional incident light; on the other hand, it is expected to solve this problem in two ways: the black-silicon material with nanostructured surface is expected to solve this problem in two ways. Because of the excellent optical absorption properties of black silicon materials, the solar cells still have good off absorption performance when the thickness of solar cells is reduced to less than tens of microns, while the current commercial crystalline silicon solar cells have the aim of effectively absorbing incident light. Most of the silicon wafers with thickness of 300 渭 m are used, and the cost of using silicon raw materials is about half of the total manufacturing cost of the battery. In this paper, a variety of nano-array black silicon materials were prepared by combining nanospheres engraving with metal assisted chemical etching (MACEE), and their optical properties were analyzed from two aspects of computational simulation and experimental results. The structure of Si nanoarrays with relatively optimal anti-reflection performance was found. The main contents of this study are as follows: 1) the etching process of nanospheres is studied to achieve the accurate control of the diameter of unpacked polystyrene spheres. Then, based on NSLand electron beam evaporation and magnetron ion sputtering, the au nano-porous array and the controlled fabrication of au nano-disk array are realized on the surface of Si wafer. In the process of preparing au nanometer-disk arrays, the preparation methods of au nanometer-ring arrays were found. The various steps of the formation of au nanometer-ring arrays were further studied, and the formation mechanism of au ring arrays was clarified. Finally, different cycles were prepared. Using au nanopores array as metal catalyst, MACE was used to realize the on-demand preparation of Si nanowire array and the controllable fabrication of Si nano-porous array respectively. The influence of various process parameters on the etching results is analyzed, and the optimized etching process is found. Then, using au nanometer-ring array as the etching catalyst, the fabrication of Si nano-pore midline array is preliminarily realized by MACE. The optical properties of Si NWAs and Si NHAs with different diameters are simulated systematically by using finite-difference time-domain method (FDTD). The simulation results are compared with the experimental results of optical performance. The results show that the ordered SiNWAss with a length of 1 渭 m and periodic 483nm have the strongest anti-reflex property at the diameter of 300nm, but when the diameter is 100nm, The simulation results show that there is an obvious absorption peak at 570nm in absorption spectrum, which is due to the resonance absorption of Si NWAs in intrinsic mode. The ordered Si NWHs with a length of 1 渭 m and periodic 483nm have the highest absorptivity at the time of diameter 400nm. Compared with Si NWAs at the 300nm diameter, it has better anti-reflection performance and is the best anti-reflection nanostructure material.
【學(xué)位授予單位】：中國科學(xué)技術(shù)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：O613.72;TB383.1
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本文編號：1901177