本文選題：化學(xué)氣相沉積 + 復(fù)合材料��； 參考：《上海交通大學(xué)》2015年碩士論文

【摘要】：石墨烯特殊的二維結(jié)構(gòu)和優(yōu)異的機(jī)械性能和導(dǎo)電導(dǎo)熱性能使其成為材料領(lǐng)域的研究熱點(diǎn),其中一個(gè)重要的方向就是作為增強(qiáng)體添加到金屬基體中制備石墨烯增強(qiáng)金屬基復(fù)合材料。目前,關(guān)于石墨烯增強(qiáng)銅基復(fù)合材料的研究主要采用機(jī)械剝離法以及還原氧化石墨烯法從外部引入石墨烯,本文以2009年S.Ruoff等人在銅箔上制備高質(zhì)量石墨烯的的研究為基礎(chǔ),嘗試采用化學(xué)氣相沉積法(CVD)在銅粉表面自生石墨烯從而制備石墨烯銅復(fù)合粉體材料。本文利用掃描電子顯微鏡(SEM)以及顯微激光拉曼光譜(RAMAN)對銅箔上制備得到的產(chǎn)物的相組成以及微觀顯微形貌進(jìn)行了分析;利用Raman、SEM、透射電子顯微鏡(TEM)對復(fù)合材料經(jīng)過硝酸刻蝕后的產(chǎn)物形貌、相組成以及晶體結(jié)構(gòu)等進(jìn)行了分析。采用甲烷作為碳源氣體在1000℃的溫度下反應(yīng)并通過PMMA保護(hù)轉(zhuǎn)移法可以得到質(zhì)量高、表面完整、缺陷較少的石墨烯薄膜。乙炔作為碳源氣體時(shí),最低裂解溫度為650℃,此時(shí)可以在銅箔上得到極少量的碳納米管,低于該溫度時(shí)不會在銅箔上沉積碳原子。700℃左右是在銅箔上沉積碳納米管的理想溫度,當(dāng)溫度過高,達(dá)到750℃時(shí)會在銅箔上沉積非晶碳顆粒。隨著乙炔流量的增加,在銅箔上生長碳納米管的能力會不斷增加,當(dāng)乙炔流量為20sccm時(shí)可以在30min內(nèi)得到覆蓋整個(gè)銅箔表面的碳納米管。通過化學(xué)氣相沉積法控制反應(yīng)溫度為650℃-700℃之間,以粒徑為10微米的球形銅粉為基體制備得到了石墨烯銅復(fù)合粉體材料。結(jié)果表明,隨著乙炔流量的增加,在銅粉上生長得到的石墨烯完整度越來越好,同時(shí)厚度也隨之不斷增加。當(dāng)反應(yīng)溫度為700℃,控制乙炔氣體流量為10sccm-20sccm可以得到石墨烯層數(shù)為5-10層的石墨烯銅復(fù)合粉體材料。
[Abstract]:Because of its special two-dimensional structure, excellent mechanical properties and conductive thermal conductivity, graphene has become a research hotspot in the field of materials. One of the important directions is to prepare graphene reinforced metal matrix composites by adding them to metal matrix as reinforcements. At present, the research on graphene reinforced copper matrix composites mainly adopts mechanical stripping method and reductive graphene oxide method to introduce graphene from the outside. This paper is based on the study of S.Ruoff et al. In 2009 to prepare high quality graphene on copper foil. The graphene copper composite powder was prepared by chemical vapor deposition (CVD) on the surface of copper powder. In this paper, the phase composition and microstructure of the products prepared on copper foil were analyzed by scanning electron microscopy (SEM) and Raman spectroscopy (Raman spectroscopy). The morphology, phase composition and crystal structure of the composites etched by nitric acid were analyzed by Ramanzem and TEM. Graphene thin films with high quality, complete surface and less defects can be obtained by the reaction of methane as carbon source gas at 1000 鈩，

本文編號：1896239