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GeH單層膜的研究與制備

發(fā)布時間:2018-04-30 19:18

  本文選題:石墨烯 + GeH。 參考:《黑龍江大學》2015年碩士論文


【摘要】:石墨烯(Graphene)的制備與應用已經(jīng)表明,從三維晶體中剝離穩(wěn)定的、單原子層厚的二維材料不僅是可行的,而且這些材料與原三維體材料相比可能具有完全不同的性質。由于Graphene的sp2雜化狀態(tài),改變其表面化學狀態(tài)是非常具有挑戰(zhàn)性的,這使得其應用受到限制。在碳的同族元素中(Si和Ge),可能存在結構上類似于石墨烯的層狀材料并是sp3雜化狀態(tài),這使得表面化學狀態(tài)的改變成為可能。這種表面化學狀態(tài)的調節(jié),可能會實現(xiàn)光電子學應用中所必需的可調帶隙。GeH(GeH)是一種類似于Graphene的二維材料,由于其優(yōu)越的特性,已經(jīng)成為了新的研究熱點。GeH是Ge的一種衍生物,可以通過CaGe2合金與濃鹽酸反應制備,而CaGe2可以使用Ge與Ca高溫反應制備。本論文首先研究了不同的反應物配比、不同溫度對CaGe2合金制備的影響。XRD測試結果表明,使用物質的量配比為Ca:Ge=1:2、在高溫下(~1000℃)可制備出較純的CaGe2。使用制備出的CaGe2與濃鹽酸在低溫下反應制備出了GeH。使用光學顯微鏡、X射線衍射(XRD)、拉曼、紅外光譜(FTIR)、X射線光電子能譜(XPS)等方法對其性質進行了表征。最后通過機械剝離的方法,制備出了數(shù)層以及單層的GeH薄膜。綜上所述,本論文對GeH二維材料的制備與表征進行了系統(tǒng)的研究,對于GeH的制備及應用有很強的指導意義。
[Abstract]:The preparation and application of graphene (Graphene) have shown that it is not only feasible to peel stable, monatomic layer thick two-dimensional materials from three-dimensional crystals, but also that these materials may have completely different properties compared with the original three-dimensional bulk materials. Because of the sp2 hybrid state of Graphene, it is very challenging to change its surface chemical state, which limits its application. In the same group of carbon elements, Si and Geo may have layered materials similar to graphene in structure and are in sp3 hybrid state, which makes it possible to change the chemical state of the surface. The regulation of the surface chemical state may realize that the tunable band gap. GeHU GeH is a kind of two-dimensional material similar to Graphene, which has become a new research hotspot. GeH is a derivative of GE. CaGe2 alloy can be prepared by reaction with concentrated hydrochloric acid, while CaGe2 can be prepared by high temperature reaction of GE and Ca. In this paper, the effects of different reactants and different temperature on the preparation of CaGe2 alloy were studied. The results showed that the pure CaGe2 could be prepared by using the mass ratio of Ca: Ge-1: 2 at 1000 鈩,

本文編號:1825838

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