本文選題：GaAs + InGaAsN��； 參考：《華南理工大學(xué)》2015年碩士論文

【摘要】：稀氮化合物In Ga As N具有顯著的能帶彎曲特性,其在長波長激光器件、近紅外探測器和薄膜太陽電池上有著十分廣闊的應(yīng)用前景,因此在Ga As襯底上外延生長In Ga As N薄膜的研究一直很受關(guān)注。與其他III-V族半導(dǎo)體化合物相比,In Ga As N最為顯著的特點(diǎn)是,它與Ga As襯底晶格匹配的同時(shí),通過調(diào)節(jié)N和In的組分即可在較大范圍內(nèi)調(diào)整自身的帶隙寬度。然而,In Ga As N/Ga As體系的外延生長過程需要控制的變量有很多,In Ga As N薄膜生長機(jī)理非常復(fù)雜。在生長工藝方面,尤其是關(guān)于生長溫度、束流比、生長速率等因素上對薄膜生長的影響分析相對不足。此外,生長過程中原子吸附和原子遷移方面的研究也是較為匱乏,導(dǎo)致相關(guān)的機(jī)理研究不夠完備和系統(tǒng)化。本文運(yùn)用MBE方法,在Ga As襯底上生長了In Ga As N薄膜。以晶體結(jié)構(gòu)、薄膜形貌、并入成分或電學(xué)性能參數(shù)這四個(gè)方面作為評判薄膜生長質(zhì)量的標(biāo)準(zhǔn),并詳細(xì)分析和研究了襯底外延晶面、As/III束流比、生長溫度、射頻N源工作參數(shù)、生長速率這五個(gè)因素對In Ga As N薄膜生長的影響,其中重點(diǎn)討論了In原子的并入和表面遷移特性。從實(shí)驗(yàn)結(jié)果逐步得出合理的In Ga As N/Ga As體系生長工藝參數(shù)。此外,我們運(yùn)用計(jì)算模擬方法,對N原子的吸附、脫附、擴(kuò)散遷移、與其他原子的相互作用等一系列行為特性進(jìn)行了深入的討論,并展示與實(shí)驗(yàn)相吻合的結(jié)果,為研究In Ga As N薄膜生長機(jī)理提供指導(dǎo)。此外,我們通過密度泛函理論(DFT)計(jì)算對In Ga As N的能帶結(jié)構(gòu)和電子分布進(jìn)行了研究,繼而解釋了In Ga As N薄膜的載流子遷移率較低的問題。
[Abstract]:The dilute nitrogen compound In Ga As N has significant band bending characteristics. It has a very broad application prospect in the long wavelength laser devices, near infrared detectors and thin film solar cells. Therefore, the epitaxial growth of In Ga As N thin film on the Ga As substrate has always been paid much attention. The remarkable feature is that, while it is matched with the Ga As substrate lattice, the band gap width can be adjusted in a larger range by adjusting the components of N and In. However, there are many variables to be controlled by the epitaxial growth process of the In Ga As N/Ga As system, and In Ga As thin film growth mechanism is very complex. In the growth process, especially in respect to the growth process, The influence of growth temperature, beam ratio and growth rate on the growth of thin film is relatively insufficient. In addition, the study of atomic adsorption and atomic migration is also deficient in the growth process. The related mechanism is not complete and systematic. In this paper, the In Ga As N film was grown on the Ga As substrate by the MBE method. The four aspects of structure, film morphology, incorporation of composition or electrical properties are considered as the criteria for evaluating the growth quality of thin films, and the effects of the five factors on the growth of In Ga As N thin film are analyzed and studied in detail, including the epitaxial surface of the substrate, the As/III beam flow ratio, the growth temperature, the working parameters of the RF N source, and the growth rate. The focus is on the In atom. The growth process parameters of the In Ga As N/Ga As system are gradually obtained from the experimental results. In addition, a series of behavior characteristics, such as the adsorption, desorption, diffusion and migration of N atoms, and the interaction with other atoms are discussed by the calculation simulation method. In addition, we have calculated the band structure and electron distribution of In Ga As N by density functional theory (DFT), and then explained the low carrier mobility of In Ga As As N As N.

【學(xué)位授予單位】：華南理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TB383.2

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