本文選題：CZTSSe + 溶液法�。� 參考：《河南大學(xué)》2015年碩士論文

【摘要】：Cu2ZnSnS4(CZTS)是用Zn、Sn替代CuInS2(CIS)半導(dǎo)體中的In演化形成的新型半導(dǎo)體材料,具有禁帶寬度與太陽能最佳吸收禁帶寬度相接近,吸收系數(shù)高(104cm-1),環(huán)境友好,且成本相對低廉的優(yōu)點,得到學(xué)術(shù)研究者的大量關(guān)注。目前制備CZTS的方法主要有真空法和非真空法,真空法具有制備薄膜致密缺陷少的優(yōu)點,但缺點是所用設(shè)備昂貴,能耗大,成為制約真空法大規(guī)模制備CZTS薄膜的主要原因。非真空法包括電沉積法、溶膠凝膠法、熱注入法和溶液法。溶液法因不需要復(fù)雜的納米晶合成過程,可以顯著的降低成本。近年來出現(xiàn)的肼溶液法獲得了基于銅鋅錫硫硒(CZTSSe)制備的太陽能電池的最高效率,但肼存在劇毒、易燃易爆以及購買受限等缺點。針對肼溶液法中所存在的缺點,本文采用低毒、低成本的分子水平溶液(聯(lián)氨和聯(lián)硫醇的混合溶液)為溶劑,溶解金屬硫?qū)倩衔?制備分子水平的前驅(qū)體溶液制備CZTSSe薄膜,并根據(jù)制備薄膜的特點及性質(zhì)將其應(yīng)用到太陽能薄膜電池和染料敏化電池中。本論文的工作主要包括以下幾個部分:(1)用乙二胺為主要溶劑,制備CZTSSe前驅(qū)體溶液。在1200 rpm下旋涂三次即可形成厚度為1.5μm的CZTSSe薄膜,從XRD可以看出前驅(qū)體薄膜結(jié)晶性不好,通過退火處理得到結(jié)晶性良好的薄膜。通過硒化處理得到表面帶有大晶粒的薄膜,這表明Se更有利于晶粒的生長。通過對比硒化前后薄膜的表面我們可以發(fā)現(xiàn),硒化過程是原有小晶粒重新長大的過程。由于乙二胺具有強烈的揮發(fā)性,在空氣環(huán)境下易生成鹽類化合物,使預(yù)制膜表面疏松多孔,造成硒化之后薄膜連續(xù)性不好。(2)將得到的疏松多孔的CZTSSe薄膜,用于染料敏化太陽能電池中,并研究不同后處理對CZTSSe作為對電極對染料敏化太陽能電池性能的影響。發(fā)現(xiàn)S/S+Se≈0.5的CZTSSe薄膜,獲得了最高的轉(zhuǎn)化效率,其效率為6.13%,這與相同條件下Pt作為對電極取得6.20%的轉(zhuǎn)換效率是相當(dāng)?shù)摹?3)將相對穩(wěn)定的二乙烯三胺引入到CZTSSe體系中,改變旋涂轉(zhuǎn)速得到表面致密的前驅(qū)體薄膜,通過硒化處理得到表面致密且結(jié)晶性良好的薄膜,采用標(biāo)準(zhǔn)電池的制備方法,組裝太陽能電池。最終我們組裝完成了有效面積為0.19 cm2的電池,并進(jìn)行了性能測試,該電池的轉(zhuǎn)換效率為3.28%。
[Abstract]:Cu2ZnSnS4CZTS is a new type of semiconductor material, which is formed by replacing in evolution of CuInS2CCISS semiconductor with ZnSn-Sn. It has the advantages that the band gap is close to the best absorption band gap of solar energy, the absorption coefficient is high 104cm-1C ~ (-1), the environment is friendly, and the cost is relatively low. Get a lot of attention from academic researchers. At present, the main methods of preparing CZTS are vacuum method and non-vacuum method. Vacuum method has the advantages of less dense defects, but the disadvantages are that the equipment used is expensive and the energy consumption is large, which is the main reason that restricts the large-scale preparation of CZTS thin films by vacuum method. Non-vacuum methods include electrodeposition, sol-gel, thermal injection and solution. Solution method can significantly reduce the cost because it does not require complex nanocrystalline synthesis process. In recent years, hydrazine solution method has obtained the highest efficiency of solar cells based on copper, zinc, tin, sulfur and selenium (CZTSSee). However, hydrazine has some disadvantages, such as high toxicity, flammable and explosive, and limited purchase. In view of the disadvantages of hydrazine solution method, CZTSSe thin films were prepared by dissolving metal sulfur compounds in low toxicity and low cost molecular level solution (mixed solution of hydrazine and mercaptan). According to the characteristics and properties of the prepared thin films, they are applied to solar thin film cells and dye sensitized cells. The main work of this thesis includes the following parts: 1) preparing CZTSSe precursor solution with ethylenediamine as the main solvent. CZTSSe thin films with thickness of 1.5 渭 m can be formed by spin-coating at 1200 rpm for three times. It can be seen from XRD that the crystalline properties of the precursor films are not good, and the films with good crystallinity can be obtained by annealing. The thin films with large grains on the surface were obtained by se treatment, which indicates that se is more favorable to grain growth. By comparing the surface of the thin films before and after selenization, we can find that the process of selenization is the process of the original small grains growing again. Due to the strong volatility of ethylenediamine, it is easy to form salt compounds in the air environment, which makes the surface of the prefabricated membrane loose and porous, resulting in poor continuity of the film after selenization. The effect of different post-treatment on the performance of dye-sensitized solar cells using CZTSSe as electrode was studied. It was found that the highest conversion efficiency of CZTSSe films with S / S se 鈮，

本文編號：1793130