發(fā)布時(shí)間：2018-04-17 22:42

  本文選題：化學(xué)浴沉積 + 鋁摻雜氧化鋅��； 參考：《哈爾濱工業(yè)大學(xué)》2017年碩士論文

【摘要】：隨著計(jì)算機(jī)、觸摸屏、太陽(yáng)能電池、液晶顯示等領(lǐng)域的不斷發(fā)展,一種新的半導(dǎo)體材料—透明導(dǎo)電薄膜應(yīng)運(yùn)而生。在太陽(yáng)能電池中,作為電極的透明導(dǎo)電膜對(duì)提高電池的光電轉(zhuǎn)換效率具有極大的意義。與氧化銦錫薄膜相比,鋁摻雜氧化鋅薄膜具有原料無毒、來源廣泛、在氫等離子體中更加穩(wěn)定等優(yōu)勢(shì),運(yùn)用溶液法來制備薄膜,成本低廉、操作簡(jiǎn)單且環(huán)境友好,極具研究?jī)r(jià)值�；谏厦娼榻B的背景,本文采用化學(xué)浴沉積的方法制備鋁摻雜氧化鋅透明導(dǎo)電薄膜。通過在襯底上制備一層種子層,然后在一定的溫度下水浴處理的方式來獲得結(jié)構(gòu)致密的氧化鋅薄膜。研究發(fā)現(xiàn),種子層的制備、水溶液的沉積工藝參數(shù)對(duì)氧化鋅薄膜的最終形貌有重要的影響,種子層熱處理溫度、溶液濃度和旋涂次數(shù)會(huì)影響種子層的厚度、均勻性和黏附性。沉積溫度會(huì)影響氧化鋅納米棒的生長(zhǎng)速度、結(jié)晶取向和晶粒尺寸,水溶液中氧化鋅的濃度對(duì)納米棒的結(jié)構(gòu)、密度和生長(zhǎng)速度影響明顯。檸檬酸銨可以促進(jìn)氧化鋅納米棒的橫向生長(zhǎng),向溶液中添加適量濃度的檸檬酸銨可以得到結(jié)晶取向高度一致、結(jié)構(gòu)致密、晶粒尺寸均勻的氧化鋅薄膜,直接影響薄膜的電阻率。采用溶膠-凝膠法制備種子層在溶液濃度為0.5 mmol/L、熱處理溫度為250℃、旋涂?jī)纱蔚臈l件下,獲得的種子層最為均勻平整。當(dāng)沉積溫度為80℃、氧化鋅濃度為38 mmol/L、檸檬酸銨濃度為2 mmol/L時(shí),薄膜的結(jié)晶形貌最好,電阻率最低。本文分別采用鋁片和九水硝酸鋁溶液來對(duì)氧化鋅薄膜進(jìn)行摻雜,發(fā)現(xiàn)在采用鋁片作為鋁源的情況下,溶液中鋁片的面積、溶液的p H值和薄膜的生長(zhǎng)時(shí)間對(duì)薄膜的電學(xué)性能具有重要的影響。而在采用九水硝酸鋁溶液進(jìn)行摻雜的過程中,溶液的濃度和生長(zhǎng)時(shí)間則是最重要的影響因素。采用紫外照射的方式可以使薄膜的電阻率大幅度降低,經(jīng)過紫外處理的鋁摻雜氧化鋅薄膜的電阻率最低可以達(dá)到10-2數(shù)量級(jí)。最后將該薄膜沉積在CZTS薄膜太陽(yáng)能電池的表面,并對(duì)太陽(yáng)能電池的光電轉(zhuǎn)化效率、外量子效率進(jìn)行測(cè)量。電池的光電轉(zhuǎn)化效率(η)可以達(dá)到5.47%,電池的開路電壓(Voc)為625 m V,短路電流(Jsc)等于16.43 m A/cm2,填充因子(FF)為53.4%。說明采用化學(xué)浴沉積法,通過鋁片進(jìn)行摻雜的方式可以制備出滿足CZTS太陽(yáng)能電池使用要求的AZO薄膜。
[Abstract]:With the development of computer, touch screen, solar cell, liquid crystal display and so on, a new kind of semiconductor material-transparent conductive film emerges as the times require.In solar cells, the transparent conductive film as an electrode is of great significance to improve the photoelectric conversion efficiency of the cell.Compared with indium tin oxide thin film, aluminum doped zinc oxide film has the advantages of non-toxic raw material, wide source, more stable in hydrogen plasma and so on. The preparation of thin film by solution method is cheap, easy to operate and environmentally friendly.It is of great research value.Based on the background above, aluminum doped zinc oxide thin films were prepared by chemical bath deposition.A dense ZnO thin film was obtained by preparing a seed layer on the substrate and then treating it in a water bath at a certain temperature.It is found that the preparation of seed layer and the deposition process parameters of aqueous solution have an important influence on the final morphology of ZnO film. The thickness, uniformity and adhesion of ZnO film are affected by the heat treatment temperature, solution concentration and spin-coating times.The growth rate, crystal orientation and grain size of ZnO nanorods are affected by deposition temperature, and the structure, density and growth rate of nanorods are influenced by the concentration of ZnO in aqueous solution.Ammonium citrate can promote the transverse growth of zinc oxide nanorods. Adding appropriate concentration of ammonium citrate to the solution can result in ZnO thin films with uniform crystal orientation, dense structure and uniform grain size, which directly affect the resistivity of the films.When the solution concentration is 0.5 mmol / L, the heat treatment temperature is 250 鈩，

本文編號(hào)：1765653