本文選題：ZnS基透明導(dǎo)電薄膜 + 磁控濺射��； 參考：《南京航空航天大學(xué)》2015年碩士論文

【摘要】：具有低電阻率及高透光率的Zn S基透明導(dǎo)電薄膜,在液晶顯示器,太陽(yáng)能電池和有機(jī)發(fā)光器件等領(lǐng)域具有廣闊的應(yīng)用前景。針對(duì)目前市場(chǎng)上應(yīng)用的透明導(dǎo)電薄膜成本高和光電性能低的問(wèn)題,本論文以Zn S基透明導(dǎo)電薄膜為研究對(duì)象,以制備具備寬波長(zhǎng)范圍透明、高光透過(guò)率和低電阻的高綜合性能新型透明導(dǎo)電薄膜為目標(biāo),采用磁控濺射儀交替濺射制備Zn S/Cu多層復(fù)合薄膜和共濺射制備Cu摻雜Zn S薄膜(Zn S:Cu),利用XRD、AFM、SEM、UV-Vis和四探針儀等多種現(xiàn)代分析測(cè)試手段,研究Zn S層厚度、Cu層厚度和層數(shù)對(duì)Zn S/Cu多層復(fù)合薄膜微觀結(jié)構(gòu)及光電性能影響,進(jìn)一步研究退火溫度對(duì)Zn S/Cu三層、五層以及Zn S:Cu薄膜結(jié)晶性能、表面組織形貌以及光電學(xué)性能影響。薄膜微觀結(jié)構(gòu)、電子濃度和各層厚度引起的光干涉效應(yīng)共同影響Zn S/Cu多層復(fù)合薄膜的綜合性能。中間層Cu薄膜按島狀方式生長(zhǎng),當(dāng)Cu層為16nm和Zn S層均為42nm時(shí),Zn S/Cu/Zn S復(fù)合薄膜在可見(jiàn)光波段的最高透光率達(dá)87%,方塊電阻為62.5?/sq,品質(zhì)因子最大為3.76×10-3?-1。增加薄膜沉積層數(shù)至五層時(shí),薄膜的透射峰向長(zhǎng)波移動(dòng),近紅外波段最高透過(guò)率為88%,方塊電阻降低至56.4?/sq,品質(zhì)因子為4.48×10-3?-1。退火處理能夠改善Zn S/Cu多層復(fù)合薄膜的結(jié)晶性能,提高薄膜的光透過(guò)率并降低其電阻。在200℃退火溫度下,薄膜開(kāi)始結(jié)晶,表面出現(xiàn)大顆粒團(tuán)簇。在100℃退火溫度下,復(fù)合薄膜的綜合性能最高分別為:Zn S/Cu/Zn S三層薄膜在可見(jiàn)光波段的最高光透過(guò)率上升至90%且1100nm處透光率仍高達(dá)73%,方塊電阻下降至46.3?/sq;Zn S/Cu/Zn S/Cu/Zn S五層薄膜的透射峰向短波移動(dòng),可見(jiàn)光波段最高的光透過(guò)率上升至89%且1100nm處透光率為72%,方塊電阻下降至40.4?/sq。Zn S:Cu薄膜進(jìn)行退火處理,薄膜在Zn S(111)擇優(yōu)取向。繼續(xù)增加退火溫度,Cu占住Zn位形成P型半導(dǎo)體Cu2S,Cu2S晶粒不斷長(zhǎng)大并伴有Cu S晶粒形成,薄膜表面形貌由顆粒狀向片狀轉(zhuǎn)變。隨退火溫度升高,Zn S:Cu薄膜的光學(xué)帶隙逐漸減小,光透過(guò)率先升高后降低,方塊電阻先減小后增大。在200℃溫度下,Zn S:Cu薄膜的方塊電阻最低為164.1?/sq,光透過(guò)率為80%,300nm-600nm波段光透過(guò)率優(yōu)于Zn S/Cu多層復(fù)合薄膜,品質(zhì)因子最大為6.1×10-4?-1。
[Abstract]:ZnS thin films with low resistivity and high transmittance are widely used in liquid crystal displays, solar cells and organic light-emitting devices.Aiming at the problems of high cost and low optoelectronic properties of transparent conductive thin films used in the market at present, this paper takes ZnS based transparent conductive thin films as the research object, in order to prepare transparent films with wide wavelength range.New transparent conductive thin films with high light transmittance and low resistance.Zn S/Cu multilayer composite films and Cu doped ZnS thin films were prepared by alternately sputtering with magnetron sputtering instrument.The effects of Zn S layer thickness and Cu layer thickness and number of layers on the microstructure and optoelectronic properties of Zn S/Cu multilayer composite films were studied. The crystallization properties of Zn S/Cu three layers, five layers and Zn S:Cu films were further studied by annealing temperature.The effect of surface morphology and optoelectronic properties.The composite properties of Zn S/Cu multilayer composite films are affected by the optical interference effect caused by the microstructure, electron concentration and the thickness of each layer.The interlayer Cu thin films are grown in island mode. When Cu layer is 16nm and ZnS layer is 42nm, the maximum transmittance of Zn S/Cu/Zn S composite film is 87 in visible light band, the square resistance is 62.5 / sqand, and the maximum quality factor is 3.76 脳 10 ~ (-3) ~ (-1) ~ (-1).When the deposition layer is increased to five layers, the transmission peak of the film moves to long wave, the highest transmittance in near infrared band is 88, the square resistance is reduced to 56.4 / sqand the quality factor is 4.48 脳 10 ~ (-3) 渭 m ~ (-1).Annealing treatment can improve the crystalline properties of Zn S/Cu multilayer composite films, increase the optical transmittance and decrease the resistance of the films.At the annealing temperature of 200 鈩，

本文編號(hào)：1764067