本文選題：4H-SiC　切入點：介孔陣列　出處：《上海師范大學(xué)》2015年碩士論文

【摘要】：作為第三代半導(dǎo)體的碳化硅(Si C)材料,具有多項優(yōu)異的性能,諸如寬禁帶、高熱導(dǎo)率、高擊穿場強等,這使得它能代替硅(Si)材料在高溫、高頻、大功率等有特殊需求的領(lǐng)域得到應(yīng)用。在硅基芯片集成化要求日益提高的背景下,硅基微結(jié)構(gòu)調(diào)控工藝已較為成熟。雖然近幾年通過各種合成方法制備了Si C納米結(jié)構(gòu),但晶型以3C-Si C為主,4H-Si C納米結(jié)構(gòu)的制備、調(diào)控產(chǎn)逐漸變?yōu)楝F(xiàn)實。如今,4H-Si C可以商業(yè)化生產(chǎn),這使得基于該晶圓的器件可實現(xiàn)量產(chǎn)。為了實現(xiàn)4H-Si C納米結(jié)構(gòu)與4H-Si C基SOC的結(jié)合,本研究將電化學(xué)刻蝕工藝運用到4H-Si C納米結(jié)構(gòu)的調(diào)控中。本論文開展的主要工作如下:在n-Si電化學(xué)刻蝕實驗研究的基礎(chǔ)上,建立了少子漂移模型,給出了n-Si刻蝕過程中產(chǎn)生側(cè)蝕的理論解釋,為n型4H-Si C電化學(xué)刻蝕提供了理論指導(dǎo)。在n型4H-Si C電化學(xué)刻蝕研究中,通過引入脈沖電流源,解決了“C面刻蝕得到的柱狀介孔孔徑隨刻蝕深度而加寬”的難題,制備出孔徑一致的均勻介孔陣列。在n型4H-Si C納米線制備研究中,通過電化學(xué)刻蝕方法,成功制備出晶型單一的4H-Si C納米線陣列。通過改變電流模式,首次實現(xiàn)了對納米線長度及形貌的調(diào)控,納米線長度可控制在納米至微米量級。應(yīng)用方面,碳化硅材料占據(jù)高溫應(yīng)用的潛在價值,在柔性場發(fā)射與柔性超級電容器研究熱潮的大背景下,本研究以高溫柔性/高溫場發(fā)射陰極和超級電容器的研制為最終目標(biāo)。工作主要對納米結(jié)構(gòu)的4H-Si C進(jìn)行了相關(guān)性能的表征。在4H-Si C納米線陣列場發(fā)射性能表征中,當(dāng)陰陽極間距為700?m時,得到場增強因子最大值7901,開啟電壓為0.86 V?μm-1。在電容特性的表征中,4H-Si C均勻介孔陣列的比電容達(dá)450?F?cm-2。
[Abstract]:As a third-generation semiconductor, silicon carbide (sic) has many excellent properties, such as wide band gap, high thermal conductivity, high breakdown field strength, etc., which makes it possible to replace Si Si Si) materials at high temperature and high frequency.High power and other fields with special needs have been applied.In the background of increasing integration requirements of silicon-based chips, silicon-based micro-structure control technology has been more mature.In recent years, sic nanostructures have been prepared by various synthetic methods, but the preparation of 4H-Si C nanostructures with 3C-Si C as the main crystal type has gradually become a reality.Today, 4 H-Si C can be commercially produced, which allows bulk production of devices based on the wafer.In order to combine 4H-Si C nanostructures with 4H-Si C based SOC, the electrochemical etching process was applied to the regulation of 4H-Si C nanostructures.The main work of this thesis is as follows: based on the experimental study of n-Si electrochemical etching, a minority carrier drift model is established, and the theoretical explanation of side etching in the process of n-Si etching is given, which provides theoretical guidance for n-type 4H-Si C electrochemical etching.In the study of n-type 4H-Si C electrochemical etching, the problem of "the cylindrical mesoporous aperture widened with etching depth" was solved by introducing pulse current source, and a uniform mesoporous array with uniform pore size was prepared.In the preparation of n-type 4H-Si C nanowires, a single 4H-Si C nanowire array was successfully fabricated by electrochemical etching.By changing the current mode, the length and morphology of nanowires are adjusted for the first time. The length of nanowires can be controlled in the order of nanometers to microns.In application aspect, silicon carbide material occupies the potential value of high temperature application. Against the background of the research boom of flexible field emission and flexible supercapacitor, the final goal of this study is to develop high temperature flexible / high temperature field emission cathode and supercapacitor.The properties of nanostructured 4H-Si C were characterized.In the field emission characterization of 4H-Si C nanowire array, when the distance between cathode and cathode is 700m, the maximum field enhancement factor is 7901 and the starting voltage is 0.86V? 渭 m -1.In the characterization of capacitance characteristics, the specific capacitance of 4H-Si C homogenous mesoporous array is up to 450 F ~ (-1) C ~ (m ~ (-2)).
【學(xué)位授予單位】：上海師范大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TB383.1;O469

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