本文選題：薄膜晶體管　切入點(diǎn)：氧化銦鋅　出處：《物理化學(xué)學(xué)報(bào)》2017年10期

【摘要】：本文研究了熱壓燒結(jié)條件對(duì)氧化銦鋅(IZO)靶材和薄膜晶體管(TFT)性能的影響。以80%:20%(質(zhì)量分?jǐn)?shù)比)的ZnO和In_2O_3的混合粉體為原料通過熱壓燒結(jié)法制備IZO靶材,以制備的靶材通過磁控濺射制備IZO TFT。X射線衍射(XRD)圖譜以及掃描電鏡(SEM)圖像表明IZO靶材結(jié)晶性好,元素分布均勻。燒結(jié)溫度為850℃時(shí)靶材呈現(xiàn)燒結(jié)致密化,900℃-60 min條件下In_2O_3的揮發(fā)破壞了靶材燒結(jié)致密化。提高燒結(jié)溫度或延長(zhǎng)燒結(jié)時(shí)間加速In向ZnO晶格的擴(kuò)散以及空位向表面遷移,有利于靶材致密化以及形成InZnO_x晶相。TFT器件表征結(jié)果表明低密度和過高密度靶材會(huì)惡化薄膜質(zhì)量,降低器件性能,可見適當(dāng)高密度的靶材對(duì)制備TFT至關(guān)重要,最終900℃-90 min條件的靶材所制備的TFT性能最好,遷移率為16.25 cm~2·V~(-1)·s~(-1)。
[Abstract]:The effects of hot pressing sintering conditions on the properties of indium zinc oxide IZO targets and thin film transistors (TFTs) have been studied.IZO targets were prepared by hot-pressing sintering from the mixed powder of ZnO and In_2O_3 (mass fraction ratio) of 80: 20. IZO TFT.X X-ray diffraction (IZO) spectra and SEM images of the prepared targets were prepared by magnetron sputtering. The results showed that IZO targets had good crystallinity.The elements are evenly distributed.At the sintering temperature of 850 鈩，

本文編號(hào)：1697541